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    MULTI-DISPLAY APPARATUS AND METHOD OF MANUFACTURING THEREOF
    1.
    发明申请
    MULTI-DISPLAY APPARATUS AND METHOD OF MANUFACTURING THEREOF 审中-公开
    多显示装置及其制造方法

    公开(公告)号：US20080144173A1

    公开(公告)日：2008-06-19

    申请号：US11832921

    申请日：2007-08-02

    申请人： Ki-deok Bae ,  Jun-seong Kim ,  Euk-che Hwang ,  Chan-bong Jun

    发明人： Ki-deok Bae ,  Jun-seong Kim ,  Euk-che Hwang ,  Chan-bong Jun

    IPC分类号： G03B21/56

    CPC分类号： G03B21/56

    摘要： A multi-display apparatus includes a plurality of panels connected to each other and displaying an image, wherein the plurality of panels comprise a top emission type display apparatus and a bottom emission type display apparatus, and the top emission type display apparatus and the bottom emission type display apparatus are connected to each other such that the top emission type display apparatus and the bottom emission type display apparatus emit light in a same direction, and the top emission type display apparatus and the bottom emission type display apparatus are arranged with a step difference therebetween such that pixel boundaries of adjacent side boundary surfaces of the top emission type display apparatus and of the bottom emission type display apparatus overlap each other.

    摘要翻译： 多显示装置包括彼此连接并显示图像的多个面板，其中多个面板包括顶部发射型显示装置和底部发射型显示装置，并且顶部发射型显示装置和底部发射 上述发光型显示装置和底部发光型显示装置以相同的方向发光，顶部发光型显示装置和底部发光型显示装置以阶差形式配置 使得顶部发射型显示装置和底部发射型显示装置的相邻侧边界面的像素边界彼此重叠。

    ZnO-based thin film transistor and method of manufacturing the same
    4.
    发明授权
    ZnO-based thin film transistor and method of manufacturing the same 有权
    ZnO系薄膜晶体管及其制造方法

    公开(公告)号：US07915610B2

    公开(公告)日：2011-03-29

    申请号：US12615315

    申请日：2009-11-10

    申请人： Myung-kwan Ryu ,  Jun-seong Kim ,  Sang-yoon Lee ,  Euk-che Hwang ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    发明人： Myung-kwan Ryu ,  Jun-seong Kim ,  Sang-yoon Lee ,  Euk-che Hwang ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    IPC分类号： H01L29/10

    CPC分类号： H01L29/7869

    摘要： A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near the surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

    摘要翻译： 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

    ZnO-based thin film transistor and method of manufacturing the same
    5.
    发明授权
    ZnO-based thin film transistor and method of manufacturing the same 有权
    ZnO系薄膜晶体管及其制造方法

    公开(公告)号：US07638360B2

    公开(公告)日：2009-12-29

    申请号：US11960567

    申请日：2007-12-19

    申请人： Myung-kwan Ryu ,  Jun-seong Kim ,  Sang-yoon Lee ,  Euk-che Hwang ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    发明人： Myung-kwan Ryu ,  Jun-seong Kim ,  Sang-yoon Lee ,  Euk-che Hwang ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7869

    摘要： A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

    摘要翻译： 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

    White organic light emitting device
    7.
    发明授权
    White organic light emitting device 有权
    白色有机发光装置

    公开(公告)号：US07968214B2

    公开(公告)日：2011-06-28

    申请号：US11946275

    申请日：2007-11-28

    申请人： Tae-yong Noh ,  Junji Kido ,  Shinichiro Tamura ,  Euk-che Hwang

    发明人： Tae-yong Noh ,  Junji Kido ,  Shinichiro Tamura ,  Euk-che Hwang

    IPC分类号： H01L51/54

    CPC分类号： H01L51/5278 ,  H01L51/5044 ,  Y10S428/917

    摘要： Provided is a white organic light emitting device comprising an anode, a cathode, and an organic layer formed between the anode and the cathode, wherein the organic layer comprises one green emissive layer, one blue emissive layer, one red emissive layer, and one charge generating layer formed between any two of the foregoing green, blue and red emissive layers. The white organic light emitting device has a tandem structure providing the simplest structure for the three color light emissions of green, blue and red.

    摘要翻译： 提供了一种白色有机发光器件，其包括在阳极和阴极之间形成的阳极，阴极和有机层，其中有机层包括一个绿色发射层，一个蓝色发射层，一个红色发射层和一个电荷 在上述绿色，蓝色和红色发射层中的任意两个之间形成的发光层。 白色有机发光器件具有串联结构，为绿色，蓝色和红色的三色发光提供最简单的结构。