公开(公告)号：US20080083924A1

公开(公告)日：2008-04-10

申请号：US11869175

申请日：2007-10-09

申请人： Kibong SONG ,  Doo-Hee CHO ,  Kyeongam KIM ,  Sang LEE

发明人： Kibong SONG ,  Doo-Hee CHO ,  Kyeongam KIM ,  Sang LEE

IPC分类号： H01L31/0272 ,  H01L21/12 ,  H01L29/04

CPC分类号： H01L29/78681 ,  H01L29/78684 ,  H01L31/1136

摘要： Provided are a thin film transistor (TFT) having a chalcogenide layer and a method of fabricating the TFT. The TFT includes an amorphous chalcogenide layer, a crystalline chalcogenide layer, source and drain electrodes, and a gate electrode. The amorphous chalcogenide layer forms a channel layer. The crystalline chalcogenide layer is formed on both sides of the amorphous layer to form source and drain regions. The source and drain electrodes are formed on both sides of the amorphous chalcogenide layer and connected to the source and drain regions of the crystalline chalcogenide layer, respectively. The gate electrode is formed above or under the channel layer with a gate insulation layer being interposed between the channel layer and the gate electrode. Therefore, the TFT can include an optical TFT structure using the chalcogenide layers as an optical conductive layer and/or an electric TFT providing diode rectification using the chalcogenide layers.

摘要翻译： 提供了具有硫族化物层的薄膜晶体管（TFT）和制造TFT的方法。 TFT包括无定形硫族化物层，结晶硫族化物层，源极和漏极以及栅电极。 无定形硫族化物层形成通道层。 结晶硫族化物层形成在非晶层的两侧以形成源区和漏区。 源极和漏极分别形成在非晶态硫族化物层的两侧，并分别连接到结晶硫族化物层的源极和漏极区域。 栅电极形成在沟道层的上方或下方，栅极绝缘层插入沟道层和栅电极之间。 因此，TFT可以包括使用硫族化物层作为光导体层的光学TFT结构和/或使用硫族化物层提供二极管整流的电TFT。

公开(公告)号：US20080185528A1

公开(公告)日：2008-08-07

申请号：US11950650

申请日：2007-12-05

申请人： Kibong SONG ,  Kyeongam KIM ,  Sang Su LEE ,  Doo-Hee CHO

发明人： Kibong SONG ,  Kyeongam KIM ,  Sang Su LEE ,  Doo-Hee CHO

IPC分类号： G01T1/24 ,  B05D5/12 ,  C01B17/00

CPC分类号： C01B19/002 ,  C01P2002/72 ,  C01P2006/60

摘要： Conventional optoconductive compounds, such as CIS or CdTe include scarce indium or environmentally-unfriendly cadmium. On the other hand, an optoconductive compound according to the present invention has high optoconductive efficiency without inclusion of indium and cadmium, wherein the optoconductive compound according to the present invention is represented by AXYY′ where A is a Group 11 element, X is a Group 15 element, and Y and Y′ are Group 16 elements in which Y and Y′ can be identical to or different from each other.

摘要翻译： 常规的光电导化合物，如CIS或CdTe，包括稀少的铟或环境不友好的镉。 另一方面，根据本发明的光导化合物在不包含铟和镉的情况下具有高的光导效率，其中根据本发明的光导化合物由AXYY'表示，其中A是第11族元素​​，X是基团 15元素，Y和Y'是Y和Y'可以相同或不同的16族元素。