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公开(公告)号:US5677236A
公开(公告)日:1997-10-14
申请号:US605609
申请日:1996-02-22
申请人: Kimihiko Saitoh , Nobuyuki Ishiguro , Mitsuru Sadamoto , Shin Fukuda , Yoshinori Ashida , Nobuhiro Fukuda
发明人: Kimihiko Saitoh , Nobuyuki Ishiguro , Mitsuru Sadamoto , Shin Fukuda , Yoshinori Ashida , Nobuhiro Fukuda
IPC分类号: H01L31/036 , H01L31/0368 , H01L31/0392 , H01L31/076 , H01L31/18 , H01L31/20
CPC分类号: H01L31/076 , H01L31/036 , H01L31/03685 , H01L31/03921 , H01L31/1824 , H01L31/202 , H01L31/204 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要: A thin microcrystalline silicon semiconductor film suitable for use as an intrinsic semiconductor layer in an amorphous silicon solar cell or the like. The thin microcrystalline silicon semiconductor film comprises an amorphous phase with crystallites contained therein in the form of a prismatic or conical crystallite aggregate phase. Additional crystallites may be dispersed as individual crystallites in the amorphous phase. In the thin film, the crystalline fraction may preferably range from 5 to 80% and the crystallite size may preferably range from 2 to 1,000 nm. This thin film can be formed by first forming an initial film to a thickness in a range of from 2 nm to 100 nm at a deposition rate of from 0.01 nm/sec to 0.1 nm/sec on a substrate and then forming a principal film at a deposition rate of from 0.1 nm/sec to 2 nm/sec, for example, in accordance with RF plasma CVD.
摘要翻译: 适合用作非晶硅太阳能电池等中的本征半导体层的薄的微晶硅半导体膜。 薄的微晶硅半导体膜包括非晶相,其中包含棱柱形或锥形微晶聚集相形式的微晶。 另外的微晶可以作为单晶体在非晶相中分散。 在薄膜中,结晶部分优选为5〜80%,微晶尺寸优选为2〜1000nm。 该薄膜可以通过首先在基板上以0.01nm / sec至0.1nm / sec的沉积速率首先在2nm至100nm的范围内形成初始膜,然后形成主膜, 例如,根据RF等离子体CVD,沉积速率为0.1nm / sec至2nm / sec。