公开(公告)号：US20240097060A1

公开(公告)日：2024-03-21

申请号：US18120595

申请日：2023-03-13

申请人： Golden Solar (Quanzhou) New Energy Technology Co., Ltd.

发明人： Kairui LIN

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/077 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/02168 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/077 ,  H01L31/1824

摘要： The present disclosure pertains to the field of back contact cell technologies, and particularly relates to a hybrid passivation back contact cell and a fabrication method thereof, the hybrid passivation back contact cell including: an N-type doped silicon substrate having a light receiving surface and a back surface, and a first semiconductor layer and a second semiconductor layer which are arranged on the back surface, wherein the second semiconductor layer includes an intrinsic silicon layer and a P-type doped silicon layer sequentially arranged in an outward direction perpendicular to the back surface, and the first semiconductor layer includes a tunneling oxide layer and an N-type doped silicon crystal layer sequentially arranged in the outward direction perpendicular to the back surface.

公开(公告)号：US20240006550A1

公开(公告)日：2024-01-04

申请号：US18367235

申请日：2023-09-12

申请人： SHANGHAI JINKO GREEN ENERGY ENTERPRISE MANAGEMENT CO., LTD. ,  ZHEJIANG JINKO SOLAR CO., LTD.

发明人： Kun YU ,  Changming LIU ,  Xinyu ZHANG

IPC分类号： H01L31/18 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/068

CPC分类号： H01L31/1868 ,  H01L31/1824 ,  H01L31/068 ,  H01L31/03685 ,  H01L31/02366

摘要： Provided are a solar cell, including: a semiconductor substrate, in which a rear surface of the semiconductor substrate having non-pyramid-shaped microstructures, the non-pyramid-shaped microstructures include two or more first substructures at least partially stacked on one another, and a one-dimensional size of the surface of the outermost first substructure is less than or equal to 45 μm; a first passivation layer located on a front surface of the semiconductor substrate; first and second tunnel oxide layers located on the non-pyramid-shaped microstructures; first and second doped conductive layers located on a surface of the first and second tunnel oxide layers, the first and second doped conductive layer has different conductive types; a second passivation layer located on a surface of the first and second doped conductive layers; and electrodes formed by penetrating through the second passivation layer to be in contact with the first and second doped conductive layers.

公开(公告)号：US20230420580A1

公开(公告)日：2023-12-28

申请号：US18163871

申请日：2023-02-02

申请人： ZHEJIANG JINKO SOLAR CO., LTD. ,  JINKO SOLAR CO., LTD.

发明人： Bike ZHANG ,  Jingsheng JIN ,  Xinyu ZHANG ,  Jingyu CAO ,  Haiyan CHENG

IPC分类号： H01L31/02 ,  H01L31/048 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/05 ,  H01L31/068

CPC分类号： H01L31/0201 ,  H01L31/048 ,  H01L31/022433 ,  H01L31/028 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/0504 ,  H01L31/068

摘要： Embodiments of the present disclosure provide a solar cell and a photovoltaic module. The solar cell includes a substrate, a tunneling dielectric layer formed on the substrate, a doped conductive layer formed on the tunneling dielectric layer, at least one conductive connection structure, a passivation layer over the doped conductive layer and the at least one conductive connection structure, and a plurality of finger electrodes. The doped conductive layer has a plurality of protrusions arranged along a first direction, each protrusion extends along a second direction perpendicular to the first direction. The at least one conductive connection structure is formed between two adjacent protrusions and connected with sidewalls of the two adjacent protrusions. Each finger electrode of the plurality of finger electrodes extends along the second direction to penetrate the passivation layer and connect to a respective protrusion.

公开(公告)号：US20230343881A1

公开(公告)日：2023-10-26

申请号：US18341600

申请日：2023-06-26

申请人： Jinko Green Energy (Shanghai) Management Co., LTD. ,  ZHEJIANG JINKO SOLAR CO., LTD.

发明人： Menglei XU ,  Jie YANG ,  Xinyu ZHANG ,  Hao JIN

IPC分类号： H01L31/0224 ,  H01L31/02 ,  H01L31/0368

CPC分类号： H01L31/022458 ,  H01L31/02021 ,  H01L31/03685

摘要： Embodiments of the present disclosure provide a solar cell and a solar cell module. The solar cell includes a first region and a second region, and further includes a substrate having a first surface and a second surface; a tunneling layer covering the second surface; a first emitter formed on part of the tunneling layer in the first region; and a second emitter formed on part of the tunneling layer in the second region and on the first emitter, a conductivity type of the second emitter being different from a conductivity type of the first emitter. The solar cell further includes a first electrode configured to electrically connect with the first emitter by penetrating through the second emitter; and a second electrode formed in the second region and configured to electrically connect with the second emitter.

公开(公告)号：US20180145196A1

公开(公告)日：2018-05-24

申请号：US15821026

申请日：2017-11-22

申请人： LG Electronics Inc.

发明人： Jungmin HA ,  Sungyeon CHO ,  Sangwook PARK

IPC分类号： H01L31/048 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/048 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/0352 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/1824 ,  H01L31/1868 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： Disclosed is a solar cell including a semiconductor substrate having a first surface and a second surface that is opposite the first surface, each of which includes a first edge area, a second edge area, and a cell area located between the first and second edge areas, a first passivation layer formed on the cell area of the first surface of the semiconductor substrate, a first conductive semiconductor layer disposed on the first passivation layer, and a first electrode disposed on the first conductive semiconductor layer. The first edge area of the first surface of the semiconductor substrate is exposed.

公开(公告)号：US09929297B2

公开(公告)日：2018-03-27

申请号：US14151478

申请日：2014-01-09

申请人： LG ELECTRONICS INC.

发明人： Eunhye Youn ,  Sangwook Park ,  Seunghwan Shim ,  Yujin Lee

IPC分类号： H01L31/065 ,  H01L31/068 ,  H01L31/0352 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/18

CPC分类号： H01L31/065 ,  H01L31/035272 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/1824 ,  Y02E10/547

摘要： A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate containing impurities of a first conductive type, an emitter region which is positioned at a front surface of the substrate and contains impurities of a second conductive type opposite the first conductive type, a back passivation layer which is positioned on a back surface of the substrate and has openings, a back surface field region containing impurities of the first conductive type, a first electrode connected to the emitter region, and a second electrode connected to the back surface field region. The back surface field region includes a first back surface field region positioned on the back passivation layer and a second back surface field region, which is positioned at the back surface of the substrate exposed by the openings of the back passivation layer.

公开(公告)号：US09450139B2

公开(公告)日：2016-09-20

申请号：US14978463

申请日：2015-12-22

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Tetsuhiro Tanaka ,  Erika Kato

IPC分类号： H01L31/20 ,  H01L21/02 ,  H01L29/04 ,  H01L29/66 ,  H01L31/0304 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/072 ,  H01L31/0735 ,  H01L31/113 ,  H01L31/18 ,  H01L31/105 ,  H01L29/786

CPC分类号： H01L31/20 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02592 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78648 ,  H01L29/78696 ,  H01L31/0304 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/0376 ,  H01L31/03762 ,  H01L31/03765 ,  H01L31/072 ,  H01L31/0735 ,  H01L31/105 ,  H01L31/1136 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/1816 ,  H01L31/1824 ,  H01L31/1852 ,  H01L31/202 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.

摘要翻译： 提供了一种用于形成含有杂质元素并具有低电阻率的非晶半导体的方法，以及制造具有优异的电特性，高产率的半导体器件的方法。 在利用等离子体CVD法形成含有杂质元素的非晶半导体的方法中，在可以获得根据帕邢定律的最小放电起始电压的压力和电极距离处的电极上施加脉冲调制放电初始电压 由此形成含有杂质元素并具有低电阻率的非晶半导体。

公开(公告)号：US09263625B2

公开(公告)日：2016-02-16

申请号：US14320438

申请日：2014-06-30

申请人： David D. Smith ,  Timothy Weidman ,  Staffan Westerberg

发明人： David D. Smith ,  Timothy Weidman ,  Staffan Westerberg

IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0224

CPC分类号： H01L31/03685 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0288 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a back contact solar cell includes a crystalline silicon substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region is disposed above the crystalline silicon substrate. The first polycrystalline silicon emitter region is doped with dopant impurity species of a first conductivity type and further includes ancillary impurity species different from the dopant impurity species of the first conductivity type. A second polycrystalline silicon emitter region is disposed above the crystalline silicon substrate and is adjacent to but separated from the first polycrystalline silicon emitter region. The second polycrystalline silicon emitter region is doped with dopant impurity species of a second, opposite, conductivity type. First and second conductive contact structures are electrically connected to the first and second polycrystalline silicon emitter regions, respectively.

摘要翻译： 描述了使用离子注入制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。 在一个示例中，背接触太阳能电池包括具有光接收表面和背表面的晶体硅衬底。 第一多晶硅发射极区域设置在晶体硅衬底之上。 第一多晶硅发射极区掺杂有第一导电类型的掺杂剂杂质种类，并且还包括与第一导电类型的掺杂杂质种类不同的辅助杂质种类。 第二多晶硅发射极区域设置在晶体硅衬底之上并且与第一多晶硅发射极区域相邻但分离。 第二多晶硅发射极区掺杂有第二相反导电类型的掺杂杂质物质。 第一和第二导电接触结构分别电连接到第一和第二多晶硅发射极区域。

公开(公告)号：US09139917B2

公开(公告)日：2015-09-22

申请号：US13502348

申请日：2010-10-15

申请人： Paul Gregory O'Brien ,  Daniel P. Puzzo ,  Nazir Pyarali Kherani ,  Geoffrey Alan Ozin ,  Alongkarn Chutinan ,  Zheng-Hong Lu ,  Michael G. Helander

发明人： Paul Gregory O'Brien ,  Daniel P. Puzzo ,  Nazir Pyarali Kherani ,  Geoffrey Alan Ozin ,  Alongkarn Chutinan ,  Zheng-Hong Lu ,  Michael G. Helander

IPC分类号： H01L31/0236 ,  C25B1/00 ,  H01L31/054 ,  C03C17/00 ,  H01B1/08 ,  H01L31/0224 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/072 ,  H01L31/0725 ,  H01L51/52 ,  H01L31/056 ,  H02S40/44 ,  H01L33/46

CPC分类号： C25B1/003 ,  C03C17/006 ,  C03C2217/425 ,  H01B1/08 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/0549 ,  H01L31/056 ,  H01L31/072 ,  H01L31/0725 ,  H01L33/46 ,  H01L51/5206 ,  H01L51/5215 ,  H01L51/5265 ,  H01L2251/5369 ,  H02S40/44 ,  H05B33/28 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/548 ,  Y02E10/60 ,  Y02E60/366 ,  Y10T428/249953

摘要： A nanocomposite material that is both transparent and electrically conductive is provided. The nanocomposite comprises a nanoporous matrix, preferably formed from nanoparticles, that is internally coated with a transparent conductive material to define an internal conductive path within the nanocomposite. The nanocomposite is substantially transparent over a defined spectral range that preferably includes at least a portion of the visible spectrum, and preferably comprises pores with a mean diameter of less than approximately 25 nm. A bilayer may be formed by depositing a layer of a transparent conductive material on top of a nanocomposite layer, or by depositing a second layer of a nanocomposite having different optical properties. The nanocomposites formed using a combination of sequential and/or concurrent deposition techniques are correspondingly discrete and/or continuously varying structures. Multilayer structures, such as photonic crystal reflectors, may be formed by depositing multiple bilayers, and integrated into devices such as tandem solar cells.

摘要翻译： 提供了透明和导电的纳米复合材料。 纳米复合材料包括优选由纳米颗粒形成的纳米孔基质，其内部涂覆有透明导电材料以在纳米复合材料内限定内部导电路径。 纳米复合材料在限定的光谱范围内基本上是透明的，优选地包括可见光谱的至少一部分，并且优选地包括平均直径小于约25nm的孔。 可以通过在纳米复合层的顶部上沉积透明导电材料层，或通过沉积具有不同光学性质的纳米复合材料的第二层来形成双层。 使用顺序和/或并行沉积技术的组合形成的纳米复合材料相应地是离散的和/或连续变化的结构。 多层结构，例如光子晶体反射器，可以通过沉积多个双层并且集成到诸如串联太阳能电池的装置中而形成。

公开(公告)号：US09112088B2

公开(公告)日：2015-08-18

申请号：US13642736

申请日：2011-04-22

申请人： Koichiro Niira ,  Norikazu Ito ,  Shinichiro Inaba

发明人： Koichiro Niira ,  Norikazu Ito ,  Shinichiro Inaba

IPC分类号： H01L21/00 ,  H01L31/076 ,  C23C16/455 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L31/076 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： Disclosed is a method for manufacturing a thin-film solar cell using plasma between a couple of parallel electrodes. In the method, a base member is placed in a chamber between a first electrode and a second electrode facing each other. A hydrogen gas is heated, and thus heated hydrogen gas and a silicon-based gas are introduced into a space between the first electrode and the second electrode. A ratio of a flow rate of the heated hydrogen gas to that of the silicon-based gas is at least 25 and no more than 58. A plasma is generated between the first electrode and the second electrode by applying high-frequency power to the second electrode while a pressure in the chamber is 1000 Pa or higher, and an optically active layer containing crystalline silicon is deposited on the base material.

摘要翻译： 公开了一种使用等离子体在一对平行电极之间制造薄膜太阳能电池的方法。 在该方法中，将基底构件放置在彼此面对的第一电极和第二电极之间的室中。 氢气被加热，因此加热的氢气和硅基气体被引入到第一电极和第二电极之间的空间中。 加热后的氢气与硅系气体的流量的比例为25以上且58以下。通过向第2电极施加高频电力，在第1电极与第2电极之间产生等离子体 电极，同时室内的压力为1000Pa以上，并且在基材上沉积含有结晶硅的光学活性层。