摘要:
A thin microcrystalline silicon semiconductor film suitable for use as an intrinsic semiconductor layer in an amorphous silicon solar cell or the like. The thin microcrystalline silicon semiconductor film comprises an amorphous phase with crystallites contained therein in the form of a prismatic or conical crystallite aggregate phase. Additional crystallites may be dispersed as individual crystallites in the amorphous phase. In the thin film, the crystalline fraction may preferably range from 5 to 80% and the crystallite size may preferably range from 2 to 1,000 nm. This thin film can be formed by first forming an initial film to a thickness in a range of from 2 nm to 100 nm at a deposition rate of from 0.01 nm/sec to 0.1 nm/sec on a substrate and then forming a principal film at a deposition rate of from 0.1 nm/sec to 2 nm/sec, for example, in accordance with RF plasma CVD.
摘要:
A method for forming an amorphous semiconductor film, which comprises (a) a film-forming step of forming a semiconductor film having not more than 20 atomic percent of bound hydrogen to a thickness of 3 to 1000 .ANG., and (b) a modifying step of modifying the formed film, the steps being repeated multiple times.
摘要:
A method for preparing an amorphous silicon solar cell is disclosed which comprises forming on a substrate, in the following order, a first electrode, a first conductive film, a thin first substantially intrinsic film, a thicker second substantially intrinsic film, a second conductive film and a second electrode.the method being characterized in that at least the thicker second substantially intrinsic film is formed by the sequential steps of:(a) depositing a semiconductor film containing 20 atom % or less of bound hydrogen and/or bound deuterium to a thickness of from 5 to 1000 .ANG., and then (b) modifying the deposited film, the sequence of steps being repeated multiple times.The solar cell formed by the above-mentioned method is particularly excellent in long-term stability.
摘要:
A transparent panel heater which can be used for heating a window portion of liquid crystal displays, refrigerated showcases, freezer showcases, defrosters of windshields, and the like. The panel heater has a transparent substrate, a transparent conductive film formed on the substrate, a substantially light-transmittable metallic thin layer formed on the conductive film and a pair of electrodes for electrifying the conductive film. The metallic thin layer is preferably deposited by a dry process such as a sputtering process, an ion plating method, various CVD methods, and the like. The electrodes are preferably formed on the metallic thin layer by a wet plating method.
摘要:
A reflecting film has at least a transparent polymer film and a thin silver layer applied on the transparent polymer film to reflect light entered from a side of the transparent polymer film. The reflecting film retains a reflectance of at least 90% to visible light even after the reflector is exposed for 300 hours at a reflecting film temperature of 100.degree. C. and an exposure intensity of 500 mW/cm.sup.2 to artificial sunlight from which light of 390 nm and shorter in wavelength has been eliminated. For fabricating the reflecting film, a surface of the transparent polymer film is preferably treated with a metal-containing plasma, then the thin-silver layer is deposited on the treated surface. A reflector making use of the reflecting film is also disclosed.
摘要翻译:反射膜在透明聚合物膜上至少具有透明聚合物膜和薄银层,以反射从透明聚合物膜侧进入的光。 即使反射体在100℃的反射膜温度下暴露300小时,对于人造太阳光的曝光强度为500mW / cm 2,反射膜仍保持至少90%的可见光的反射率,其中光390 已经消除了nm和更短的波长。 为了制造反射膜,优选用含金属的等离子体处理透明聚合物膜的表面,然后将薄银层沉积在处理过的表面上。 还公开了使用反射膜的反射器。
摘要:
A transparent conductive laminate in which a transparent conductive layer (an ITO film) mainly comprising indium, tin and oxygen is formed on one main surface of a transparent substrate such as a polymeric film and which is excellent in moist heat resistance and scuff resistance and which can be applied to various kinds of transparent electrodes. The transparent conductive layer has a stable amorphous structure, and its resistivity is 1×l0−2 &OHgr;·cm or less, and its electron mobility is 20 cm2/(V·sec) or more. This transparent conductive laminate can be prepared by forming an amorphous film mainly comprising indium, tin and oxygen and having a resistivity of more than 1×10−2 &OHgr;·cm on the substrate by a sputtering process under a high oxygen concentration atmosphere, and then subjecting the film to a heat treatment in the range of 80 to 180° C. to decrease the resistivity to 1×10−2 &OHgr;·cm or less, while the amorphous structure is maintained. This transparent conductive laminate can suitably be utilized as the transparent electrode of an electroluminescence light-emitting element equipped with a layer containing zinc sulfide as a light-emitting layer, and in this case, the deterioration of luminance during continuous light emission can be remarkably inhibited.
摘要:
A laminate using a polymeric molded article as a substrate and having a light transparency, gas barrier properties and an excellent alkali resistance. The laminate is obtainable by carrying out a surface treatment to deposit an oxide of at least one metal selected from the metal elements of groups 2, 8, 9, 10 and 11 of the periodic table, and then forming a gas barrier layer such as oxides of silicon, nitrides of silicon and carbides of silicon on the treated surface. The gas barrier layer is not peeled off from the polymeric molded article even after being immersed in an alkali solution of pH 12 or more. The amount of the metal on the treated surface is preferably in the range of 5.times.10.sup.14 atoms/cm.sup.2 to 3.times.10.sup.16 atoms/cm.sup.2 in terms of the metal atoms per unit area. The practical performance of the laminate is not deteriorated during the patterning, by alkali etching, of a transparent conductive layer formed on the laminate.
摘要翻译:使用聚合物成型品作为基材并具有透光性,阻气性和优异的耐碱性的层压体。 通过进行表面处理以沉积选自元素周期表第2,8,9,10和11族的金属中的至少一种金属的氧化物,然后形成气体阻隔层,例如氧化物 的硅,硅的氮化物和处理过的表面上的硅的碳化物。 即使浸渍在pH12以上的碱溶液中,阻气层也不会从聚合成型体剥离。 处理表面上的金属的量以每单位面积的金属原子为5×1014原子/ cm 3至3×10 16原子/ cm 2的范围。 通过碱蚀刻在层压体上形成的透明导电层的图案化,层压体的实用性能不会降低。
摘要:
This invention relates to an injection type thin film luminescence element having a high luminance and a high stability characterized in having two electrode layers at least one of which is transparent or translucent and having between these two electrode layers a luminescence function-manifesting layer comprising a laminated layer of a p-type or n-type inorganic semiconductor thin film layer and an organic compound thin film layer.
摘要:
An image processor includes a motion vector acquisition section for acquiring and outputting an image motion vector in pixel or a predetermined block unit from plural frames included in an input image signal; and a frame interpolation section for generating an interpolated frame by using the motion vector provided by the motion vector acquisition section and for combining the interpolated frame with a frame of the input image signal, thereby composing a signal of a new frame sequence. The motion vector acquisition section includes a first motion vector acquisition section acquiring a motion vector by matching process and a second motion vector acquisition section acquiring a motion vector based on a relative misalignment of a predetermined edge component between two temporally successive frames in a specific area of an input image signal's frame.
摘要:
A roadside apparatus is connected to a roadside network and an in-vehicle apparatus which carries out wireless data transfer with the roadside apparatus, and it is equipped with a specifying unit for specifying an in-vehicle apparatus by associating an IP address which was assigned with respect to each in-vehicle apparatus, and an in-vehicle apparatus identifier other than an IP address. By this configuration, between the roadside apparatus and the in-vehicle apparatus, enabled is data communication which utilized an IP series communication protocol for specifying an in-vehicle apparatus by use of an IP address which was assigned with respect to each in-vehicle apparatus, and a non-IP series communication protocol for specifying an in-vehicle apparatus by use of LID.