公开(公告)号：US20240006359A1

公开(公告)日：2024-01-04

申请号：US18334547

申请日：2023-06-14

Applicant: Kioxia Corporation

Inventor： Akira NAKAJIMA

IPC: H01L23/00 ,  H01L27/146

CPC classification number: H01L24/08 ,  H01L27/14634 ,  H01L27/14636 ,  H01L24/05 ,  H01L24/03 ,  H01L24/80 ,  H01L2924/1431 ,  H01L2224/05546 ,  H01L2224/05547 ,  H01L2224/05583 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05686 ,  H01L2924/0541 ,  H01L2224/08501 ,  H01L2924/05341 ,  H01L2924/0132 ,  H01L2224/08147 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03848 ,  H01L2224/03845 ,  H01L2224/808 ,  H01L2224/80357 ,  H01L2224/05681

Abstract: In a semiconductor device according to an embodiment, a first connection wiring layer and a second connection wiring layer are bonded such that a first surface and a second surface face each other and a first electrode and a second electrode are in contact with each other, wherein the first electrode includes a first barrier metal film provided in a first trench and containing Ti, and a first conductive film provided in the first trench via the first barrier metal film and containing polycrystalline Cu, the second electrode includes a second barrier metal film provided in a second trench and containing Ti, and a second conductive film provided in the second trench via the second barrier metal film and containing polycrystalline Cu, and Ti and O are present on a bonding surface between the first electrode and the second electrode.

公开(公告)号：US20230282577A1

公开(公告)日：2023-09-07

申请号：US17940000

申请日：2022-09-08

Applicant: Kioxia Corporation

Inventor： Akira NAKAJIMA

IPC: H01L23/528 ,  H01L23/535 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L23/535 ,  H01L21/76816 ,  H01L21/76819 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76895

Abstract: A semiconductor device according to the present embodiment includes a wiring layer including a plurality of wires. The wires include first wires and second wires. Each of the first wires has a first width in a direction substantially parallel to the wiring layer. The second wires are arranged at wider intervals than intervals of the first wires. Each of the second wires includes a first wiring member having a second width larger than the first width, and a second wiring member provided on the first wiring member and having a third width larger than the second width.

公开(公告)号：US20230069025A1

公开(公告)日：2023-03-02

申请号：US17590057

申请日：2022-02-01

Applicant: Kioxia Corporation

Inventor： Akira NAKAJIMA

IPC: H01L23/535 ,  H01L23/532 ,  H01L21/768

Abstract: A semiconductor device according to the present embodiment comprises a first conductive layer. An interconnection is provided above the first conductive layer. A contact is provided between the first conductive layer and the interconnection. The interconnection includes a first metal layer containing hexagonal titanium (Ti) provided above the first conductive layer, a second metal layer containing tantalum (Ta) having a body-centered cubic lattice-like structure and provided on the first metal layer, and a first wiring material provided on the second metal layer.

公开(公告)号：US20250070023A1

公开(公告)日：2025-02-27

申请号：US18808257

申请日：2024-08-19

Applicant: Kioxia Corporation

Inventor： Hisashi KATO ,  Masayoshi TAGAMI ,  Akira NAKAJIMA

IPC: H01L23/528 ,  G11C16/04 ,  H01L23/00 ,  H01L23/522 ,  H01L23/532 ,  H10B41/10 ,  H10B41/27 ,  H10B43/10 ,  H10B43/27

Abstract: A semiconductor device includes a first chip including a first insulating layer; a second chip bonded to the first chip and including a second insulating layer; and a pad provided around a bonded surface between the first chip and the second chip. The pad includes a first metal layer including a first metal, a second metal layer disposed between the first metal layer and the first insulating layer, and a third metal layer disposed between the first metal layer and the second insulating layer. At least one of the second metal layer or the third metal layer include a second metal having oxidation energy lower than oxidation energy of the first metal. The first metal layer further includes the second metal.

公开(公告)号：US20240071928A1

公开(公告)日：2024-02-29

申请号：US18333590

申请日：2023-06-13

Applicant: Kioxia Corporation

Inventor： Akira NAKAJIMA

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/53238 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/5228 ,  H01L23/53266

Abstract: A semiconductor device according to the embodiment includes: a first interlayer insulating film; a lower wiring layer provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film and having a first trench provided therein; and an upper wiring layer provided in the first trench of the second interlayer insulating film and electrically connected to the lower wiring layer, wherein the upper wiring layer includes: a first barrier metal film provided in the first trench, and mainly composed of Ta; a second barrier metal film provided in the first trench via the first barrier metal film, and mainly composed of Ti; and a first conductive film provided in the first trench via the first barrier metal film and the second barrier metal film, and mainly composed of a first metal.