公开(公告)号：US20210020450A1

公开(公告)日：2021-01-21

申请号：US16819348

申请日：2020-03-16

Applicant: Kioxia Corporation

Inventor： Chihiro ABE ,  Toshiyuki Sasaki ,  Hisataka Hayashi ,  Mitsuhiro Omura ,  Tsubasa Imamura

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01J37/32

Abstract: An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.

公开(公告)号：US20230114349A1

公开(公告)日：2023-04-13

申请号：US18080838

申请日：2022-12-14

Applicant: Kioxia Corporation

Inventor： Chihiro ABE ,  Toshiyuki SASAKI ,  Hisataka HAYASHI ,  Mitsuhiro OMURA ,  Tsubasa IMAMURA

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01J37/32

Abstract: An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.