公开(公告)号：US20230114349A1

公开(公告)日：2023-04-13

申请号：US18080838

申请日：2022-12-14

Applicant: Kioxia Corporation

Inventor： Chihiro ABE ,  Toshiyuki SASAKI ,  Hisataka HAYASHI ,  Mitsuhiro OMURA ,  Tsubasa IMAMURA

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01J37/32

Abstract: An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.

公开(公告)号：US20220165753A1

公开(公告)日：2022-05-26

申请号：US17669875

申请日：2022-02-11

Applicant: Kioxia Corporation

Inventor： Mitsuhiro OMURA

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11568

Abstract: According to one embodiment, a method for manufacturing a semiconductor memory device includes forming a stacked body by alternately stacking an insulating film and a conductive film. The method includes forming a trench in the stacked body. The trench extends in one direction and divides the conductive film. The method includes burying a diblock copolymer in the trench. The method includes phase-separating the diblock copolymer into a plurality of first blocks and an insulative second block extending in a stacking direction of the insulating film and the conductive film. The method includes forming a plurality of holes by removing the first blocks. The method includes forming charge accumulation layers on inner surfaces of the holes. And, the method includes forming a plurality of semiconductor pillars extending in the stacking direction by burying a semiconductor material in the holes.

公开(公告)号：US20210296137A1

公开(公告)日：2021-09-23

申请号：US17005568

申请日：2020-08-28

Applicant: Kioxia Corporation

Inventor： Junichi HASHIMOTO ,  Mitsuhiro OMURA ,  Toshiyuki SASAKI

IPC: H01L21/311 ,  H01L21/033

Abstract: A film processing method includes forming a target film, the target film having an upper surface. The method includes forming a carbon film on the upper surface of the target film. The method includes performing a first etching to format least one recess in the target film, with the carbon film serving as a mask. The method includes performing a second etching, by directing an ion beam through the at least one recess, to increase a depth of the at least one recess.

公开(公告)号：US20210066090A1

公开(公告)日：2021-03-04

申请号：US16806622

申请日：2020-03-02

Applicant: KIOXIA CORPORATION

Inventor： Junichi HASHIMOTO ,  Kaori NARUMIYA ,  Kosuke HORIBE ,  Soichi YAMAZAKI ,  Kei WATANABE ,  Yusuke KONDO ,  Mitsuhiro OMURA ,  Takehiro KONDOH ,  Yuya MATSUBARA ,  Junya FUJITA ,  Toshiyuki SASAKI

IPC: H01L21/311 ,  H01L21/033 ,  H01L27/11556 ,  H01L27/11582

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.