公开(公告)号：US11468946B2

公开(公告)日：2022-10-11

申请号：US17345208

申请日：2021-06-11

Applicant: Kioxia Corporation

Inventor： Kazuki Okawa ,  Hiroyuki Hara ,  Atsushi Kawasumi

IPC: G11C11/00 ,  G11C13/00 ,  H03K19/173 ,  G11C5/06

Abstract: Provided is a semiconductor storage device including: a substrate having a substrate surface extending in a first direction and a second direction intersecting the first direction; a plurality of first region memory cells provided in a plurality of layers provided parallel to the substrate surface and in a third direction, the first region memory cells being provided above a rectangular shaped first region provided on the substrate surface, the first region having a first side parallel to the first direction and a second side parallel to the second direction when viewed from the third direction intersecting the first direction and the second direction; a plurality of first region wirings provided between the first region memory cells; a plurality of second region memory cells provided in the layers, the second region memory cells being provided above a rectangular shaped second region having a third side parallel to the first direction and a fourth side parallel to the second direction when viewed from the third direction; a plurality of second region wirings provided between the second region memory cells; and a control circuit capable of executing a reading operation.