公开(公告)号：US20230301088A1

公开(公告)日：2023-09-21

申请号：US17806111

申请日：2022-06-09

Applicant: Kioxia Corporation

Inventor： Saho OHSAWA ,  Kenichi FUJII ,  Takashi FUKUSHIMA ,  Hiroyuki OHTORI ,  Kaihei KATOU ,  Masaki KATO ,  Ryosuke SAWABE ,  Yuji SAKAI

IPC: H01L27/11582 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L27/11582 ,  H01L29/4234 ,  H01L29/513

Abstract: A semiconductor memory device of an embodiment includes: a semiconductor layer extending in a first direction; a gate electrode layer containing at least one element selected from a group consisting of molybdenum (Mo), tungsten (W), ruthenium (Ru), and cobalt (Co); a first insulating layer provided between the semiconductor layer and the gate electrode layer; a charge storage layer provided between the first insulating layer and the gate electrode layer; a second insulating layer provided between the charge storage layer and the gate electrode layer; a third insulating layer provided between the second insulating layer and the gate electrode layer; and a metal oxide layer provided between the third insulating layer and the gate electrode layer and containing at least one first metal element selected from a group consisting of titanium (Ti), molybdenum (Mo), tungsten (W), and tantalum (Ta).