公开(公告)号：US20230301088A1

公开(公告)日：2023-09-21

申请号：US17806111

申请日：2022-06-09

Applicant: Kioxia Corporation

Inventor： Saho OHSAWA ,  Kenichi FUJII ,  Takashi FUKUSHIMA ,  Hiroyuki OHTORI ,  Kaihei KATOU ,  Masaki KATO ,  Ryosuke SAWABE ,  Yuji SAKAI

IPC: H01L27/11582 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L27/11582 ,  H01L29/4234 ,  H01L29/513

Abstract: A semiconductor memory device of an embodiment includes: a semiconductor layer extending in a first direction; a gate electrode layer containing at least one element selected from a group consisting of molybdenum (Mo), tungsten (W), ruthenium (Ru), and cobalt (Co); a first insulating layer provided between the semiconductor layer and the gate electrode layer; a charge storage layer provided between the first insulating layer and the gate electrode layer; a second insulating layer provided between the charge storage layer and the gate electrode layer; a third insulating layer provided between the second insulating layer and the gate electrode layer; and a metal oxide layer provided between the third insulating layer and the gate electrode layer and containing at least one first metal element selected from a group consisting of titanium (Ti), molybdenum (Mo), tungsten (W), and tantalum (Ta).

公开(公告)号：US20230073505A1

公开(公告)日：2023-03-09

申请号：US17683963

申请日：2022-03-01

Applicant: Kioxia Corporation

Inventor： Takashi FUKUSHIMA ,  Yuji SAKAI ,  Hiroshi ITOKAWA ,  Tatsunori ISOGAI ,  Ryosuke SAWABE

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

Abstract: A semiconductor storage device includes: a plurality of conductive layers arranged in a first direction; a semiconductor layer extending in the first direction and facing the plurality of conductive layers; a charge storage layer provided between the plurality of conductive layers and the semiconductor layer; a first structure disposed apart from the semiconductor layer in a second direction intersecting the first direction, extending in a third direction intersecting the first direction and the second direction, and facing the plurality of conductive layers; and a plurality of first nitride films containing nitrogen (N), and covering surfaces of the plurality of conductive layers facing the first structure.

公开(公告)号：US20210057446A1

公开(公告)日：2021-02-25

申请号：US16999149

申请日：2020-08-21

Applicant: Kioxia Corporation

Inventor： Ryosuke SAWABE ,  Yasuhiro UCHIYAMA ,  Hiroshi ITOKAWA

IPC: H01L27/11582 ,  H01L27/11565 ,  G11C16/04

Abstract: A semiconductor memory device comprises a semiconductor, a first insulator, a second insulator, a first conductor, a third insulator, a fourth insulator, and a fifth insulator. The first insulator is on the semiconductor. The second insulator is on the first insulator. The third insulator is on the first conductor. The fourth insulator is between the second insulator and the first conductor. The fifth insulator is provided between the second insulator and the third insulator. The fifth insulator is having an oxygen concentration different from an oxygen concentration of the fourth insulator.