公开(公告)号：US12230326B2

公开(公告)日：2025-02-18

申请号：US17943487

申请日：2022-09-13

Applicant: Kioxia Corporation

Inventor： Keisuke Suda ,  Ryota Suzuki ,  Kenta Yamada

IPC: G11C16/06 ,  G11C5/02 ,  G11C16/04 ,  G11C16/14 ,  G11C16/26 ,  G11C16/34 ,  H10B41/10 ,  H10B41/27 ,  H10B43/10 ,  H10B43/27

Abstract: A semiconductor memory device includes memory blocks arranged in a first direction and bit lines that are arranged in a second direction, and are arranged with the memory blocks in a third direction. The memory block includes first conductive layers arranged in the third direction, a second conductive layer disposed on a side opposite to the bit lines in the third direction with respect to the first conductive layers, semiconductor layers that extend in the third direction, are opposed to the first conductive layers, have one ends in the third direction electrically connected to the second conductive layer, and have the other ends in the third direction electrically connected to the bit lines, and electric charge accumulating films disposed between the first conductive layers and the semiconductor layers. The first conductive layers and the second conductive layer are separated between the memory blocks.

公开(公告)号：US11309322B2

公开(公告)日：2022-04-19

申请号：US16569215

申请日：2019-09-12

Applicant: KIOXIA CORPORATION

Inventor： Ryota Fujitsuka ,  Kenta Yamada ,  Takanori Yamanaka ,  Takayuki Okada ,  Hirokazu Ishigaki ,  Hiroki Kishi ,  Nobushi Matsuura ,  Takashi Yamane ,  Ryota Suzuki

IPC: H01L27/11563 ,  H01L21/02 ,  H01L29/423 ,  H01L21/28 ,  H01L21/768

Abstract: A semiconductor memory device according to an embodiment includes a semiconductor substrate; a laminated body formed by laminating a plurality of electrode layers on the semiconductor substrate; a memory film provided in the laminated body and including a first block insulation film disposed in a direction perpendicular to the electrode layer, a charge storage film facing the first block insulation film, a tunnel insulation film facing the charge storage film, and a channel film facing the tunnel insulation film; and a barrier layer provided at at least one of interface between the plurality of electrode layers and the memory film and an interface in the memory film and mainly composed of carbon.