公开(公告)号：US11683943B2

公开(公告)日：2023-06-20

申请号：US17125126

申请日：2020-12-17

Applicant: Kioxia Corporation

Inventor： Tsunehiro Ino ,  Yukihiro Nomura ,  Kazuhiko Yamamoto ,  Koji Usuda

IPC: H10B63/00 ,  G11C13/00 ,  H10N70/20 ,  H10N70/00

CPC classification number: H10B63/80 ,  G11C13/0004 ,  G11C13/0007 ,  H10N70/231 ,  H10N70/8822 ,  H10N70/8825 ,  H10N70/8828 ,  G11C2213/76

Abstract: A memory device including a first conductive layer; a second conductive layer; a resistance change region provided between the first conductive layer and the second conductive layer; a first region provided between the resistance change region and the first conductive layer, the first region including a first element selected from the group consisting of niobium, vanadium, tantalum, and titanium, and a second element selected from the group consisting of oxygen, sulfur, selenium, and tellurium, the first region having a first atomic ratio of the first element to the second element; and a second region provided between the first region and the resistance change region, the second region including the first element and the second element, the second region having a second atomic ratio of the first element to the second element, the second atomic ratio being smaller than the first atomic ratio.