公开(公告)号：US20220085182A1

公开(公告)日：2022-03-17

申请号：US17198673

申请日：2021-03-11

Applicant: Kioxia Corporation

Inventor： Junji KATAOKA ,  Tomomasa UEDA ,  Shushu ZHENG ,  Nobuyoshi SAITO ,  Keiji IKEDA

IPC: H01L29/423 ,  H01L27/108 ,  H01L29/22 ,  H01L29/786

Abstract: A semiconductor device according to an embodiment includes an oxide semiconductor layer, a gate electrode, and the gate electrode, a first electrode electrically connected to the oxide semiconductor layer, a second electrode electrically connected to the oxide semiconductor layer, a first conductive layer provided at at least one position between the oxide semiconductor layer and the first electrode and between the oxide semiconductor layer and the second electrode, the first conductive layer containing a first metal element, a first element different from the first metal element, and one of oxygen (O) or nitrogen (N), and a second conductive layer between the oxide semiconductor layer and the first conductive layer, the second conductive layer containing oxygen (O) and a second element different from both of the first metal element and the first element. The gate electrode is between the first electrode and the second electrode in the first direction.