公开(公告)号：US20220068925A1

公开(公告)日：2022-03-03

申请号：US17193941

申请日：2021-03-05

Applicant: Kioxia Corporation

Inventor： Hiroki KAWAI ,  Junji KATAOKA ,  Keiji IKEDA

IPC: H01L27/108 ,  H01L29/24 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device of an embodiment includes an oxide semiconductor layer. The oxide semiconductor layer includes a metal oxide containing at least one first metal element selected from the group consisting of indium and tin and at least one second metal element selected from the group consisting of zinc, gallium, aluminum, tungsten, and silicon. The oxide semiconductor layer includes a first region in which at least one anion element selected from the group consisting of fluorine and chlorine is contained within a range of 1 atomic % or more and less than 8 atomic % in the metal oxide.

公开(公告)号：US20220223430A1

公开(公告)日：2022-07-14

申请号：US17411475

申请日：2021-08-25

Applicant: Kioxia Corporation

Inventor： Junji KATAOKA ,  Shuichi KUBOI

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32

Abstract: A plasma etching method in an embodiment includes etching a silicon-containing film by using plasma of a hydrofluorocarbon gas. The hydrofluorocarbon gas contains, as a conjugated cyclic compound, hydrofluorocarbon having a composition represented by CxHyFz, where x, y, and z are positive integers satisfying x≥6 and (z−y)/x≤1).

公开(公告)号：US20220085182A1

公开(公告)日：2022-03-17

申请号：US17198673

申请日：2021-03-11

Applicant: Kioxia Corporation

Inventor： Junji KATAOKA ,  Tomomasa UEDA ,  Shushu ZHENG ,  Nobuyoshi SAITO ,  Keiji IKEDA

IPC: H01L29/423 ,  H01L27/108 ,  H01L29/22 ,  H01L29/786

Abstract: A semiconductor device according to an embodiment includes an oxide semiconductor layer, a gate electrode, and the gate electrode, a first electrode electrically connected to the oxide semiconductor layer, a second electrode electrically connected to the oxide semiconductor layer, a first conductive layer provided at at least one position between the oxide semiconductor layer and the first electrode and between the oxide semiconductor layer and the second electrode, the first conductive layer containing a first metal element, a first element different from the first metal element, and one of oxygen (O) or nitrogen (N), and a second conductive layer between the oxide semiconductor layer and the first conductive layer, the second conductive layer containing oxygen (O) and a second element different from both of the first metal element and the first element. The gate electrode is between the first electrode and the second electrode in the first direction.