公开(公告)号：US20250038007A1

公开(公告)日：2025-01-30

申请号：US18914504

申请日：2024-10-14

Applicant: Kioxia Corporation

Inventor： Takeshi SONEHARA ,  Takahiro HIRAI ,  Masaaki HIGUCHI ,  Takashi SHIMIZU

IPC: H01L21/321 ,  H10B43/27

Abstract: According to an embodiment, a nonvolatile semiconductor memory device comprises a plurality of conductive layers that are stacked in plurality in a first direction via an inter-layer insulating layer, that extend in a second direction which intersects the first direction, and that are disposed in plurality in a third direction which intersects the first direction and the second direction. In addition, the same nonvolatile semiconductor memory device comprises: a semiconductor layer that has the first direction as a longitudinal direction; a tunnel insulating layer that contacts a side surface of the semiconductor layer; a charge accumulation layer that contacts a side surface of the tunnel insulating layer; and a block insulating layer that contacts a side surface of the charge accumulation layer. Furthermore, in the same nonvolatile semiconductor memory device, an end in the third direction of the plurality of conductive layers is rounded.

公开(公告)号：US20210407905A1

公开(公告)日：2021-12-30

申请号：US17447332

申请日：2021-09-10

Applicant: Kioxia Corporation

Inventor： Takashi SHIMIZU ,  Takashi FUKUSHIMA ,  Naomi FUKUMAKI ,  Hiroko TAHARA ,  Kenichi IDE

IPC: H01L23/522 ,  H01L23/532 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/768

Abstract: According to one embodiment, a semiconductor memory device includes: a plurality of first conductive layers that each include tungsten; a plurality of insulating films that include a stacked portion and a first projecting portion projecting; a semiconductor layer extending through an inside of a stacked body; a charge storage layer arranged between the plurality of first conductive layers and the semiconductor layer; a plurality of second conductive layers that are each arranged on the first projecting portion in such a manner as to be in contact with a single first conductive layer and that include silicon containing an impurity; and a plurality of contact plugs that are each provided on a single second conductive layer in such a manner as to be in contact with the single second conductive layer.

公开(公告)号：US20240030040A1

公开(公告)日：2024-01-25

申请号：US18479871

申请日：2023-10-03

Applicant: Kioxia Corporation

Inventor： Takeshi SONEHARA ,  Takahiro HIRAI ,  Masaaki HIGUCHI ,  Takashi SHIMIZU

IPC: H01L21/321 ,  H10B43/27

CPC classification number: H01L21/32105 ,  H10B43/27

Abstract: According to an embodiment, a nonvolatile semiconductor memory device comprises a plurality of conductive layers that are stacked in plurality in a first direction via an inter-layer insulating layer, that extend in a second direction which intersects the first direction, and that are disposed in plurality in a third direction which intersects the first direction and the second direction. In addition, the same nonvolatile semiconductor memory device comprises: a semiconductor layer that has the first direction as a longitudinal direction; a tunnel insulating layer that contacts a side surface of the semiconductor layer; a charge accumulation layer that contacts a side surface of the tunnel insulating layer; and a block insulating layer that contacts a side surface of the charge accumulation layer. Furthermore, in the same nonvolatile semiconductor memory device, an end in the third direction of the plurality of conductive layers is rounded.