公开(公告)号：US20230091827A1

公开(公告)日：2023-03-23

申请号：US17692711

申请日：2022-03-11

Applicant: Kioxia Corporation

Inventor： Satoshi NAGASHIMA ,  Hidenori MIYAGAWA ,  Atsushi TAKAHASHI ,  Shota KASHIYAMA

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157

Abstract: A semiconductor memory device includes a substrate, a semiconductor layer extending in a first direction, a first conductive layer extending in a second direction and opposed to the semiconductor layer, an electric charge accumulating layer disposed between the semiconductor layer and the first conductive layer, and a first contact electrode extending in the first direction and connected to the first conductive layer. The first contact electrode has one end in the first direction farther from the substrate than the first conductive layer, the other end in the first direction closer to the substrate than the first conductive layer. The first conductive layer includes a first part opposed to the semiconductor layer and a second part connected to the first contact electrode. The second part has a thickness in the first direction larger than a thickness in the first direction of the first part.

公开(公告)号：US20230309310A1

公开(公告)日：2023-09-28

申请号：US17930889

申请日：2022-09-09

Applicant: Kioxia Corporation

Inventor： Yuta SAITO ,  Shinji MORI ,  Hiroyuki YAMASHITA ,  Satoshi NAGASHIMA ,  Kazuhiro MATSUO ,  Kota TAKAHASHI ,  Shota KASHIYAMA ,  Keiichi SAWA ,  Junichi KANEYAMA

IPC: H01L27/1158 ,  G11C5/06 ,  H01L27/1157

CPC classification number: H01L27/1157 ,  G11C5/063 ,  H01L27/1158

Abstract: A semiconductor device of embodiments includes: a semiconductor layer containing silicon (Si); a first insulating layer provided in a first direction of the semiconductor layer; a second insulating layer surrounded by the semiconductor layer in a first cross section perpendicular to the first direction and containing silicon (Si) and oxygen (O); a third insulating layer surrounded by the second insulating layer in the first cross section and containing a metal element and oxygen (O); and a conductive layer surrounded by the first insulating layer in a second cross section perpendicular to the first direction, provided in the first direction of the third insulating layer, and spaced from the semiconductor layer.

公开(公告)号：US20250107085A1

公开(公告)日：2025-03-27

申请号：US18602979

申请日：2024-03-12

Applicant: Kioxia Corporation

Inventor： Shota KASHIYAMA ,  Koichi SAKATA

IPC: H10B43/27 ,  G11C16/04 ,  H01L23/528 ,  H10B43/10 ,  H10B43/35

Abstract: First conductors and first insulators are alternately arranged one by one in a first direction in a first region. The first insulators and second insulators are alternately arranged one by one in the first direction in a second region. The memory pillar penetrates the first conductors and the first insulators in the first region and includes a semiconductor. A second conductor includes first to third portions. The second portion electrically couples the first portion and the third portion. A side surface of the third portion is electrically coupled to the semiconductor. A first film extends along the first direction in the second region. A second film contacts the first film, extends along the first direction, and includes carbon or metal. One of the second insulators includes a portion extending along the first and second films in the second region and being distanced from the second film.

公开(公告)号：US20210280601A1

公开(公告)日：2021-09-09

申请号：US17022958

申请日：2020-09-16

Applicant: Kioxia Corporation

Inventor： Shota KASHIYAMA ,  Satoshi NAGASHIMA

IPC: H01L27/11582 ,  H01L27/11556

Abstract: A semiconductor memory device includes a first semiconductor layer that includes a first part extending in a first direction, a second part extending in the first direction, and a third part connected to the first and second parts. When a cross-sectional surface extending in second and third directions and including the third part is defined as a first cross-sectional surface, the third part has one side and the other side of an imaginary center line in the third direction in the first cross-sectional surface defined as first and second regions, the third part has maximum widths in the second direction in the first and second regions defined as first and second widths, and the third part has a width in the second direction on the imaginary center line defined as a third width, the third width is smaller than the first and second widths.

公开(公告)号：US20240121962A1

公开(公告)日：2024-04-11

申请号：US18461326

申请日：2023-09-05

Applicant: Kioxia Corporation

Inventor： Satoshi NAGASHIMA ,  Shota KASHIYAMA ,  Tadashi IGUCHI ,  Takuya NISHIKAWA

IPC: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B43/10

CPC classification number: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B43/10

Abstract: According to one embodiment, a semiconductor device includes a stacked film with first insulating films and electrode layers alternately stacked in a first direction. The device further includes a columnar portion extending in the first direction and provided in a first region of the stacked film. The columnar portion forms memory cells at its intersections with the electrode layers. The device further includes a support column portion provided in a second region and extending in the first direction. A conductive plug is provided on a first electrode layer among the electrode layers in the second region. A first side surface of the support column portion faces a second side surface of the plug and the second side surface is concave in a direction toward the first side surface.

公开(公告)号：US20230047644A1

公开(公告)日：2023-02-16

申请号：US17835180

申请日：2022-06-08

Applicant: Kioxia Corporation

Inventor： Shota KASHIYAMA ,  Weili CAI

IPC: H01L27/11582 ,  H01L27/11556

Abstract: A semiconductor storage device according to an embodiment includes a substrate, an interconnection layer region, a multi-layered body, a semiconductor body, and a columnar part. The multi-layered body has an end portion facing the interconnection layer region as an end portion in the first direction. The columnar part includes a first portion and a second portion, the first portion is at the end portion of the multi-layered body, the second portion is closer to the substrate than the first portion is. The first portion has a center. The second portion has a center. The center of the second portion in a second direction is displaced in the second direction with respect to the center of the first portion in the second direction. The second direction crosses the first direction.