公开(公告)号：US5374835A

公开(公告)日：1994-12-20

申请号：US63654

申请日：1993-05-20

申请人： Kizashi Shimada ,  Mayumi Kamura ,  Tatsuo Akiyama

发明人： Kizashi Shimada ,  Mayumi Kamura ,  Tatsuo Akiyama

IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/423 ,  H01L29/778 ,  H01L29/80 ,  H01L31/112

CPC分类号： H01L29/42316

摘要： A compound semiconductor device such as HEMTs (High Electron Mobility Transistors), metal semiconductor field effect transistors, and the like includes a compound semiconductor substrate having an active region, an insulating film provided over the semiconductor substrate, source and drain electrodes provided on the active region, and a gate electrode located between the source and drain electrodes. In the structure, the gate electrode has a lower electrode portion for providing a Schottky barrier contact with the active region through an opening of the insulating film, and an upper electrode portion provided on the insulating film to extend toward only the drain electrode.

摘要翻译： 诸如HEMT（高电子迁移率晶体管），金属半导体场效应晶体管等的化合物半导体器件包括具有有源区的化合物半导体衬底，设置在半导体衬底上的绝缘膜，设置在有源区上的源极和漏极 以及位于源极和漏极之间的栅电极。 在该结构中，栅电极具有用于通过绝缘膜的开口与有源区提供肖特基势垒接触的下电极部分和设置在绝缘膜上以仅向漏电极延伸的上电极部分。

公开(公告)号：US5260603A

公开(公告)日：1993-11-09

申请号：US942136

申请日：1992-09-08

申请人： Mayumi Kamura ,  Souichi Imamura ,  Tatsuo Akiyama

发明人： Mayumi Kamura ,  Souichi Imamura ,  Tatsuo Akiyama

IPC分类号： H01L29/45 ,  H01L23/48 ,  H01L29/46 ,  H01L29/54 ,  H01L29/62

CPC分类号： H01L29/452 ,  H01L2924/0002

摘要： A semiconductor device having a GaAs substrate and an ohmic electrode. An electrode pad is on part of the ohmic electrode and on part of the GaAs substrate outside the ohmic electrode. The electrode pad includes a first platinum film, a titanium film, a second platinum film, and a gold film which are sequentially deposited on one another. The first platinum film is thinner than each of the titanium film, second platinum film and gold film.

摘要翻译： 具有GaAs衬底和欧姆电极的半导体器件。 电极焊盘位于欧姆电极的一部分上，并且在欧姆电极外部的部分GaAs衬底上。 电极焊盘包括彼此顺序沉积的第一铂膜，钛膜，第二铂膜和金膜。 第一铂膜比钛薄膜，第二铂膜和金膜薄。