公开(公告)号：US4039357A

公开(公告)日：1977-08-02

申请号：US718386

申请日：1976-08-27

申请人： Klaus Jurgen Bachmann ,  Manfred Hermann Bettini ,  Ernest Buehler ,  Joseph Leo Shay ,  Sigurd Wagner

发明人： Klaus Jurgen Bachmann ,  Manfred Hermann Bettini ,  Ernest Buehler ,  Joseph Leo Shay ,  Sigurd Wagner

IPC分类号： C30B29/50 ,  C23C16/02 ,  H01L21/306 ,  H01L21/363 ,  H01L21/365 ,  H01L29/04 ,  H01L29/267 ,  H01L31/04 ,  H01L31/072 ,  H01L31/18 ,  H01L21/205 ,  H01L21/302 ,  H01L31/06

CPC分类号： C23C16/0236 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02557 ,  H01L21/02576 ,  H01L21/02631 ,  H01L21/30612 ,  H01L29/04 ,  H01L29/267 ,  H01L31/072 ,  H01L31/18 ,  Y02E10/50 ,  Y10S148/065

摘要： A hydrogen transport process for cleaning the surface of an indium or gallium based semiconductor material and for depositing n-type cadmium sulfide on the cleaned semiconductor material is disclosed. The cleaning and deposition can be accomplished in sequence or simultaneously. The process entails adding hydrogen sulfide to a hydrogen gas flow in a chemical vapor deposition process. Single crystalline photovoltaic cells of p-InP/n-CdS with a 13.5% efficiency have been reproducibly fabricated. An efficiency of 4.6% has been obtained with a thin layer polycrystalline p-InP/n-CdS cell. Additionally, a p-GaAs/n-CdS heterodiode cell has been produced.

摘要翻译： 公开了用于清洁铟或镓基半导体材料的表面并用于在清洁的半导体材料上沉积n型硫化镉的氢输送过程。 清洗和沉积可以顺序或同时完成。 该方法需要在化学气相沉积工艺中向氢气流中加入硫化氢。 已经重复制造了具有13.5％效率的p-InP / n-CdS的单晶光伏电池。 利用薄层多晶p-InP / n-CdS电池获得了4.6％的效率。 另外，已经生产了p-GaAs / n-CdS异二极管电池。