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公开(公告)号：US3988172A
公开(公告)日：1976-10-26
申请号：US587042
申请日：1975-06-16
CPC分类号： H01L21/00 , Y10S148/003 , Y10S148/072 , Y10S148/079 , Y10S148/12
摘要： Solar cells showing improved efficiency, amounting to about 14 percent for overall solar power conversion, are obtained by annealing InP/CdS solar cells in a slightly reducing atmosphere for about 15 minutes in a temperature range preferably from about 550.degree. centrigrade to about 600.degree. centigrade. In an annealing temperature range from 400.degree. centigrade to 625.degree. centigrade, an inversely dependent adjustment of annealing time is found desirable. The atmosphere preferably comprises mainly a substantially inert component and typically comprises an H.sub.2 + N.sub.2 mixture, such as forming gas (15% H.sub.2 + 85% N.sub.2).
摘要翻译： 通过在稍微还原的气氛中将InP / CdS太阳能电池退火约15分钟，在优选约550摄氏度至约600摄氏度的温度范围内，可获得总体太阳能转换效率达到约14％的太阳能电池。 。 在退火温度范围从400摄氏度到625摄氏度之间，退火时间的反向调整是可取的。 气氛优选主要包括基本上惰性的组分，并且通常包含H 2 + N 2混合物，例如形成气体（15％H 2 + 85％N 2）。
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2.发明授权Etching of III-V semiconductor materials with H.sub.2 S in the preparation of heterodiodes to facilitate the deposition of cadmium sulfide 失效用H {HD 2 {B S在异二极管的制备中蚀刻III-V半导体材料以促进硫化镉的沉积
公开(公告)号：US4039357A
公开(公告)日：1977-08-02
申请号：US718386
申请日：1976-08-27
申请人： Klaus Jurgen Bachmann , Manfred Hermann Bettini , Ernest Buehler , Joseph Leo Shay , Sigurd Wagner
发明人： Klaus Jurgen Bachmann , Manfred Hermann Bettini , Ernest Buehler , Joseph Leo Shay , Sigurd Wagner
IPC分类号： C30B29/50 , C23C16/02 , H01L21/306 , H01L21/363 , H01L21/365 , H01L29/04 , H01L29/267 , H01L31/04 , H01L31/072 , H01L31/18 , H01L21/205 , H01L21/302 , H01L31/06
CPC分类号： C23C16/0236 , H01L21/02392 , H01L21/02395 , H01L21/02557 , H01L21/02576 , H01L21/02631 , H01L21/30612 , H01L29/04 , H01L29/267 , H01L31/072 , H01L31/18 , Y02E10/50 , Y10S148/065
摘要： A hydrogen transport process for cleaning the surface of an indium or gallium based semiconductor material and for depositing n-type cadmium sulfide on the cleaned semiconductor material is disclosed. The cleaning and deposition can be accomplished in sequence or simultaneously. The process entails adding hydrogen sulfide to a hydrogen gas flow in a chemical vapor deposition process. Single crystalline photovoltaic cells of p-InP/n-CdS with a 13.5% efficiency have been reproducibly fabricated. An efficiency of 4.6% has been obtained with a thin layer polycrystalline p-InP/n-CdS cell. Additionally, a p-GaAs/n-CdS heterodiode cell has been produced.
摘要翻译： 公开了用于清洁铟或镓基半导体材料的表面并用于在清洁的半导体材料上沉积n型硫化镉的氢输送过程。 清洗和沉积可以顺序或同时完成。 该方法需要在化学气相沉积工艺中向氢气流中加入硫化氢。 已经重复制造了具有13.5％效率的p-InP / n-CdS的单晶光伏电池。 利用薄层多晶p-InP / n-CdS电池获得了4.6％的效率。 另外，已经生产了p-GaAs / n-CdS异二极管电池。
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公开(公告)号：US3978510A
公开(公告)日：1976-08-31
申请号：US492394
申请日：1974-07-29
IPC分类号： H01L21/363 , H01L29/267 , H01L31/0336 , H01L31/072 , H01L31/0749 , H01L33/00 , H01L33/26 , H04B10/12 , H04B10/28 , H01L27/14
CPC分类号： H01L33/26 , H01L21/02485 , H01L21/02557 , H01L21/02625 , H01L21/02631 , H01L29/267 , H01L31/072 , H01L31/0749 , H04B10/43 , Y02E10/541 , Y10S148/063 , Y10S148/097 , Y10S148/12 , Y10S148/169
摘要： Photovoltaic devices are constructed from a principal body of copper indium selenide (CuInSe.sub.2) upon which is deposited a hetero-epitaxial layer of a high bandgap semiconductor, such as an n-type layer of cadmium sulfide (CdS). When made with a high-resistance intermediate region, the device is a photovoltaic detector for modulated radiation and has a response time as low as 5 nsec for a reverse bias of approximately two to three volts. When made without a high-resistance intermediate region (e.g., an abrupt p-n heterojunction) the device is a useful solar cell. In these forms of the device, absolute photovoltaic quantum efficiencies up to 70 percent have been observed. The quantum efficiency of the solar cell type of device is reasonably flat between 0.55 and 1.25 .mu.m. With forward bias, the device is a light-emitting diode with external electro-luminescent quantum efficiency of .about.1.times.10.sup.-.sup.4 at room temperature and .about.1.times.10.sup.-.sup.2 at 77.degree.K, liquid nitrogen temperature.
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公开(公告)号：US4081290A
公开(公告)日：1978-03-28
申请号：US672878
申请日：1976-04-02
CPC分类号： H01L21/00
摘要： Heterodiodes showing excellent potential for use in solar cells and photoelectric devices consist of junctions of p-type indium phosphide and n-type cadmium sulfide. These heterojunctions can be formed either from single crystal or from polycrystalline semiconductor material. The former type junction when incorporated in a solar cell exhibits promise for applications such as in space vehicles. The latter type junction as used in a solar cell has potential for large scale power generation. A chemical vapor deposition process for producing polycrystalline p-type indium phosphide films for incorporation into such a power producing device is disclosed.
摘要翻译： 在太阳能电池和光电器件中显示出极好的潜力的异二极管由p型磷化铟和n型硫化镉的结构组成。 这些异质结可以由单晶或多晶半导体材料形成。 当结合在太阳能电池中时，前一种类型的接头对于诸如太空车辆的应用来说是有希望的。 在太阳能电池中使用的后一种类型的接头具有大规模发电的潜力。 公开了一种用于制造用于结合到这种发电装置中的多晶P型磷化铟膜的化学气相沉积工艺。
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