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15 条记录 (耗时 0.018 秒)

    Contact type image sensor
    4.
    发明授权
    Contact type image sensor 失效
    接触式图像传感器

    公开(公告)号：US5335092A

    公开(公告)日：1994-08-02

    申请号：US982419

    申请日：1992-11-27

    申请人： Koichi Kitamura ,  Hidenori Mimura ,  Kazuo Yamamoto ,  Yasumitsu Ohta ,  Kazuyoshi Sai ,  Youichi Nagatake

    发明人： Koichi Kitamura ,  Hidenori Mimura ,  Kazuo Yamamoto ,  Yasumitsu Ohta ,  Kazuyoshi Sai ,  Youichi Nagatake

    IPC分类号： H04N3/15 ,  H04N1/04

    CPC分类号： H04N3/1581

    摘要： A contact type image sensor including a plurality of photodiodes for converting a light signal into an electric signal according to the intensity of the light and a plurality of blocking diodes, arranged in either a back-to-back or a front-to-front connection with the photodiodes, for functioning as switching elements to have the information stored on the photodiodes read out, and adapted to be driven by a matrix drive system. For a back-to-back connection of the blocking diodes and photodiodes, a control circuit maintains the potential difference between cathodes of the photodiodes at zero volts at all times. Similarly, for a front-to-front connection of the blocking diodes and photodiodes, a control/drive circuit maintains the potential difference between the anodes of the photodiodes at zero volts at all times. Since the potential difference between the cathodes (for the back-to-back connection) or anodes (for the front-to-front connection) of all of the photodiodes is always maintained at zero volts, crosstalk at crossover portions between output lines connected to the photodiodes is reduced.

    摘要翻译： 一种接触型图像传感器，包括用于根据光的强度将光信号转换为电信号的多个光电二极管和多个阻塞二极管，其布置成背对背或前后连接 与光电二极管一起用作开关元件以使存储在光电二极管上的信息被读出，并且适于由矩阵驱动系统驱动。 对于阻塞二极管和光电二极管的背对背连接，控制电路始终保持在零伏特的光电二极管的阴极之间的电位差。 类似地，对于阻塞二极管和光电二极管的前到前连接，控制/驱动电路始终保持在零伏特的光电二极管的阳极之间的电位差。 由于所有光电二极管的阴极（用于背靠背连接）或阳极（用于前后连接）之间的电位差总是保持在零伏特，所以连接到输出线之间的交叉部分处的串扰 光电二极管减少。

    Dry-etched amorphous silicon device with recessed electrode
    5.
    发明授权
    Dry-etched amorphous silicon device with recessed electrode 失效
    具有凹陷电极的干蚀刻非晶硅器件

    公开(公告)号：US5166757A

    公开(公告)日：1992-11-24

    申请号：US498752

    申请日：1990-03-26

    申请人： Koichi Kitamura ,  Hidenori Mimura ,  Kazuo Yamamoto ,  Yasumitsu Ohta

    发明人： Koichi Kitamura ,  Hidenori Mimura ,  Kazuo Yamamoto ,  Yasumitsu Ohta

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/3065

    摘要： A dry-etched amorphous silicon device which includes an amorphous silicon layer between upper and lower electrodes wherein the adverse effects of dangling silicon bonds on the periphery of the amorphous silicon layer are avoided by cutting back the peripheral surface of at least one of the electrodes to be radially inward of the peripheral surface of the amorphous silicon layer by at least one micron with respect to an axis of the device.

    摘要翻译： 一种干蚀刻非晶硅器件，其包括在上下电极之间的非晶硅层，其中通过将至少一个电极的外周表面切割回来，避免了悬挂硅键在非晶硅层周围的不利影响 相对于器件的轴线，至少一微米处，非晶硅层的外围表面径向向内。

    Complete close-contact type image sensor
    6.
    发明授权
    Complete close-contact type image sensor 失效
    完成紧密接触式图像传感器

    公开(公告)号：US5142381A

    公开(公告)日：1992-08-25

    申请号：US501044

    申请日：1990-03-29

    申请人： Koichi Kitamura ,  Hidenori Mimura ,  Kazuo Yamamoto ,  Yasumitsu Ohta ,  Kazuyoshi Sai ,  Tamio Saito

    发明人： Koichi Kitamura ,  Hidenori Mimura ,  Kazuo Yamamoto ,  Yasumitsu Ohta ,  Kazuyoshi Sai ,  Tamio Saito

    IPC分类号： H04N1/031

    CPC分类号： H04N1/02835 ,  H04N1/0313 ,  H04N1/0316

    摘要： A complete close-contact type image sensor which comes into contact with an original and reads information from the original and which includes a sensor element for photoelectro conversion of a light signal reflected from the original and electronic parts such as a driven unit for driving the sensor element and taking out an electric signal stored in the sensor element, the image sensor being characterized in that the electronic parts such as the driving unit are disposed inside a plane including the surface of contact with the original. According to the above construction of the present invention, since the electronic parts, including the driving unit, are disposed inside the plane which includes the surface of contact with the original, the path of transfer of the original can be made rectilinear to stabilize the feed of the original without enlarging the gap between the sensor element and the original.

    摘要翻译： 与原稿接触并从原件读取信息的完整的紧密接触型图像传感器，其包括用于光电转换从原件反射的光信号的传感器元件和诸如用于驱动传感器的驱动单元的电子部件 取出存储在传感器元件中的电信号，图像传感器的特征在于，诸如驱动单元的电子部件设置在包括与原稿的接触表面的平面内。 根据本发明的上述结构，由于包括驱动单元在内的电子部件设置在包含与原稿的接触面的平面内，原稿的转印路径可以直线化以稳定进给 的原件，而不会扩大传感器元件与原稿之间的间隙。

    Complete-contact type image sensor
    7.
    发明授权
    Complete-contact type image sensor 失效
    全接触式图像传感器

    公开(公告)号：US5216524A

    公开(公告)日：1993-06-01

    申请号：US525021

    申请日：1990-05-18

    申请人： Koichi Kitamura ,  Hidenori Mimura ,  Kazuo Yamamoto ,  Yasumitsu Ohta ,  Kazuyoshi Sai

    发明人： Koichi Kitamura ,  Hidenori Mimura ,  Kazuo Yamamoto ,  Yasumitsu Ohta ,  Kazuyoshi Sai

    IPC分类号： H04N1/028 ,  H01L27/146 ,  H04N1/031

    CPC分类号： H04N1/031

    摘要： A complete-contact type image sensor includes matrix-driven sensor elements arranged on a light transmitting substrate. Both input contact members connected with the sensor elements at their input side and output contact members connected with the sensor elements at their output side are formed at one same side on the light transmitting substrate. By virtue of this arrangement, the sensor elements and an original are brought into close contact, thereby improving the MTF (Modulation Transfer Function) and reducing the width of the light transmitting substrate.

    摘要翻译： 完全接触型图像传感器包括布置在透光衬底上的矩阵驱动的传感器元件。 在其输入侧与传感器元件连接的两个输入触点构件和在其输出侧与传感器元件连接的输出触点构件形成在透光基板的同一侧。 通过这种布置，传感器元件和原件紧密接触，从而改善MTF（调制传递函数）并减小透光基板的宽度。

    Full contact image sensor device with light blocking means
    8.
    发明授权
    Full contact image sensor device with light blocking means 失效
    具有遮光装置的全接触式图像传感器装置

    公开(公告)号：US5149955A

    公开(公告)日：1992-09-22

    申请号：US555594

    申请日：1990-07-23

    申请人： Koichi Kitamura ,  Hidenori Mimura ,  Kazuo Yamamoto ,  Yasumitsu Ohta ,  Kazuyoshi Sai

    发明人： Koichi Kitamura ,  Hidenori Mimura ,  Kazuo Yamamoto ,  Yasumitsu Ohta ,  Kazuyoshi Sai

    IPC分类号： H04N1/031

    CPC分类号： H04N1/0316 ,  H04N1/0313

    摘要： A full contact image sensor device comprising sensor elements adapted to macroscopically touch a document to receive reflected light from the document and to generate electric signals in response thereto, wherein a receiving surface of each sensor element has an uneven contour and the device wherein each sensor element corresponding to a pixel comprises a plurality of sensor element blocks is proposed. The devices are easily manufactured and have excellent MTF and sensitivity.

    摘要翻译： 一种全接触图像传感器装置，包括适于宏观地触摸文件以接收来自文件的反射光并响应于此产生电信号的传感器元件，其中每个传感器元件的接收表面具有不均匀的轮廓，并且其中每个传感器元件 对应于像素包括多个传感器元件块。 这些器件容易制造，具有优异的MTF和灵敏度。

    Contact type image sensor device with specific capacitance ratio
    10.
    发明授权
    Contact type image sensor device with specific capacitance ratio 失效
    具有比电容比的接触式图像传感器

    公开(公告)号：US5004903A

    公开(公告)日：1991-04-02

    申请号：US503179

    申请日：1990-04-02

    申请人： Koichi Kitamura ,  Hidenori Mimura ,  Kazuo Yamamoto ,  Yasumitsu Ohta ,  Kazuyoshi Sai

    发明人： Koichi Kitamura ,  Hidenori Mimura ,  Kazuo Yamamoto ,  Yasumitsu Ohta ,  Kazuyoshi Sai

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14643

    摘要： A contact type image sensor device comprises a plurality of photodiodes connected in a matrix, and an equal number of blocking diodes. A capacity ratio of a photo electric part constituting the photodiodes to a diode part constituting the blocking diode is in the range of 2:1 to 30:1. Dynamic range, magnitude of the signal current, light sensitivity and after image characteristics of the image sensor are improved according to the invention.

    摘要翻译： 接触型图像传感器装置包括以矩阵形式连接的多个光电二极管和相等数量的阻塞二极管。 构成光电二极管的光电部件与构成阻塞二极管的二极管部件的容量比在2:1〜30:1的范围内。 根据本发明，改善了图像传感器的动态范围，信号电流的大小，光敏度和图像特性。