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公开(公告)号：US06975917B2
公开(公告)日：2005-12-13
申请号：US10485575
申请日：2002-08-05
CPC分类号： H01L21/67253 , F27D19/00 , H01L21/67098 , H01L21/67109 , Y10T29/41
摘要： A thermal processing method selects a batch size range including the number of workpieces to be processed from a plurality of batch size ranges including batch size ranges in which reference numbers smaller than the holding capacity of a workpiece holder are maximums. The workpieces are distributed in the workpiece holder on the basis of the workpiece distribution pattern determined corresponding to the specified batch size range. Processing conditions of the thermal process are determined according to the workpiece distribution pattern. A thermal processing apparatus comprises a controller capable of carrying out the thermal processing method.
摘要翻译： 热处理方法从包括小于工件保持器的保持容量的参考数量最大的批量范围的多个批量范围中选择包括待加工的工件数量的批量范围。 工件根据对应于指定批量范围确定的工件分配图案分布在工件夹持器中。 根据工件分布模式确定热处理的加工条件。 热处理装置包括能够执行热处理方法的控制器。
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公开(公告)号：US20070195853A1
公开(公告)日：2007-08-23
申请号：US10561976
申请日：2004-07-01
IPC分类号： G01K15/00
CPC分类号： C23C16/52 , C23C16/46 , H01L21/67103 , H01L21/67248
摘要： The present invention provides precise temperature estimation in a heat treatment apparatus that estimates temperatures of process objects by using a thermal model and performs a heat treatment while performing a temperature control based on the estimated temperatures. The heat treatment apparatus 1 includes a processing vessel 11 accommodating plural wafers W, plural heaters 31 to 33 and plural temperature sensors S1 to S5, and stores the thermal model. The heat treatment apparatus 1 estimates temperatures of the wafers W based on outputs of the temperature sensors S1 to S5 by using the thermal model and controls the heaters 31 to 33 based on the estimated temperatures, applying a heat treatment to the wafers W. The thermal model for an individual apparatus is made by calibrating a standard thermal model designed for a standard apparatus. The standard model calibration is performed by heating an interior of the processing vessel 11, measuring the temperatures of the wafers W in the processing vessel 11, estimating the temperatures of the wafers W by using the thermal model, comparing the measured temperature and the estimated temperature, and calibrating the standard thermal model so that the measured temperature substantially coincide with the estimated temperature.
摘要翻译： 本发明在通过使用热模型估计过程物体的温度并在基于估计的温度执行温度控制的同时进行热处理的热处理设备中提供精确的温度估计。 热处理装置1包括容纳多个晶片W的处理容器11，多个加热器31〜33以及多个温度传感器S1〜S5，并存储热模型。 热处理装置1通过使用热模型，基于温度传感器S 1〜S 5的输出来估计晶片W的温度，并基于估计的温度控制加热器31〜33，对晶片W进行热处理。 单个设备的热模型通过校准为标准设备设计的标准热模型来进行。 通过加热处理容器11的内部，测量处理容器11中的晶片W的温度，通过使用热模型估计晶片W的温度，比较测量的温度和估计的温度来执行标准模型校准 ，并校准标准热模型，使得测量的温度基本上与估计的温度一致。
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公开(公告)号：US07575370B2
公开(公告)日：2009-08-18
申请号：US10561976
申请日：2004-07-01
CPC分类号： C23C16/52 , C23C16/46 , H01L21/67103 , H01L21/67248
摘要： The present invention provides precise temperature estimation in a heat treatment apparatus that estimates temperatures of process objects by using a thermal model and performs a heat treatment while performing a temperature control based on the estimated temperatures. The heat treatment apparatus (1) includes a processing vessel (11) accommodating plural wafers W, plural heaters (31 to 33) and plural temperature sensors (S1 to S5), and stores the thermal model. The heat treatment apparatus 1 estimates temperatures of the wafers W based on outputs of the temperature sensors (S1 to S5) by using the thermal model and controls the heaters (31 to 33) based on the estimated temperatures, applying a heat treatment to the wafers W. The thermal model for an individual apparatus is made by calibrating a standard thermal model designed for a standard apparatus. The standard model calibration is performed by heating an interior of the processing vessel (11), measuring the temperatures of the wafers W in the processing vessel (11), estimating the temperatures of the wafers W by using the thermal model, comparing the measured temperature and the estimated temperature, and calibrating the standard thermal model so that the measured temperature substantially coincides with the estimated temperature.
摘要翻译： 本发明在通过使用热模型估计过程物体的温度并在基于估计的温度执行温度控制的同时进行热处理的热处理设备中提供精确的温度估计。 热处理装置（1）包括容纳多个晶片W的处理容器（11），多个加热器（31〜33）和多个温度传感器（S1〜S5），并存储热模型。 热处理装置1通过使用热模型，基于温度传感器（S1〜S5）的输出来估计晶片W的温度，并基于估计的温度控制加热器（31〜33），对晶片进行热处理 W.通过校准为标准设备设计的标准热模型来制作单个设备的热模型。 通过加热处理容器（11）的内部，测量处理容器（11）中的晶片W的温度，通过使用热模型估计晶片W的温度来进行标准模型校准，将测量的温度 和估计温度，并校准标准热模型，使得测量的温度基本上与估计的温度一致。
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公开(公告)号：US06744957B2
公开(公告)日：2004-06-01
申请号：US10133074
申请日：2002-04-26
IPC分类号： G02B606
CPC分类号： G02B6/065 , G02B6/4296 , G02B23/26 , H04N5/217 , H04N2005/2255
摘要： Herein disclosed is an image fiber imaging apparatus comprising an image guide fiber bundle having a plurality of optical fibers, a receiving end, at which one ends of said optical fibers are arranged, and a transmitting end, at which other ends of said optical fibers are arranged, said receiving end being directed to an object to receive an image of said object, said optical fibers transmitting said image received at said receiving end to said transmitting end, said image including a plurality of image portions, each corresponding to one of said optical fibers; a solid-state imaging device arranged at said transmitting end of said image guide fiber bundle for converting said image including a plurality of image portions transmitted by said optical fibers of said image guide fiber bundle into an image signal; an electrical spatial filter for filtering said image signal converted by said solid-state imaging device to output a filtered image signal; and a display unit for displaying said filtered image signal outputted by said electrical spatial filter.
摘要翻译： 本文公开了一种图像光纤成像装置，包括：具有多个光纤的图像引导光纤束，设置有所述光纤的一端的接收端;以及发送端，所述光纤的另一端为 所述接收端被引导到物体以接收所述对象的图像，所述光纤将在所述接收端接收的所述图像发送到所述发送端，所述图像包括多个图像部分，每个图像部分对应于所述光学 纤维; 固体成像装置，其布置在所述图像引导光纤束的所述发射端处，用于将包括由所述图像引导光纤束的所述光纤传输的多个图像部分的所述图像转换为图像信号; 电空间滤波器，用于对由所述固态成像装置转换的所述图像信号进行滤波，以输出滤波图像信号; 以及显示单元，用于显示由所述电空间滤波器输出的所述滤波图像信号。
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公开(公告)号：US08082054B2
公开(公告)日：2011-12-20
申请号：US12760017
申请日：2010-04-14
申请人： Kaname Yamaji , Kiyoshi Suzuki , Yuichi Takenaga
发明人： Kaname Yamaji , Kiyoshi Suzuki , Yuichi Takenaga
IPC分类号： G06F19/00
CPC分类号： C23C16/52 , G05B13/021 , H01L21/67005 , H01L22/12 , H01L22/20
摘要： The present invention is a method of optimizing a process recipe of a substrate processing system including: a substrate processing apparatus that performs a film deposition process of a substrate to be processed according to a process recipe; a data processing unit that executes a calculation for optimizing the process recipe; and a host computer; the substrate processing apparatus, the data processing unit, and the host computer being connected to each other through a network. The present invention includes the steps of: measuring a film thickness of a substrate to be processed that has been subjected to a film deposition process by the substrate processing apparatus; sending a command for conducting a process-recipe optimizing process from the host computer to the substrate processing apparatus, when the measured film thickness is deviated from a target film thickness and the deviation is beyond an allowable range; and in response to the command for conducing a process-recipe optimizing process from the host computer, sending required data from the substrate processing apparatus to the data processing unit, causing the data processing unit to execute a process-recipe optimizing calculation to calculate an optimum process recipe for achievement of the target film thickness, and updating the process recipe in the substrate processing apparatus based on the calculated result.
摘要翻译： 本发明是一种优化基板处理系统的工艺配方的方法，包括：基板处理装置，其根据处理配方进行待加工基板的成膜处理; 数据处理单元，其执行用于优化处理配方的计算; 和主机; 基板处理装置，数据处理单元和主机通过网络彼此连接。 本发明包括以下步骤：测量由基板处理装置进行的膜沉积处理的被处理基板的膜厚; 当测量的膜厚度偏离目标膜厚度并且偏差超出允许范围时，发送用于进行从主机到基板处理装置的处理配方优化处理的命令; 并且响应于从主计算机进行处理配方优化处理的命令，将所需数据从基板处理装置发送到数据处理单元，使数据处理单元执行处理配方优化计算以计算最佳值 用于实现目标膜厚度的处理配方，以及基于计算结果更新基板处理装置中的处理配方。
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公开(公告)号：US20080086228A1
公开(公告)日：2008-04-10
申请号：US11905842
申请日：2007-10-04
申请人： Kaname Yamaji , Kiyoshi Suzuki , Yuichi Takenaga
发明人： Kaname Yamaji , Kiyoshi Suzuki , Yuichi Takenaga
IPC分类号： G06F19/00
CPC分类号： C23C16/52 , G05B13/021 , H01L21/67005 , H01L22/12 , H01L22/20
摘要： The present invention is a method of optimizing a process recipe of a substrate processing system including: a substrate processing apparatus that performs a film deposition process of a substrate to be processed according to a process recipe; a data processing unit that executes a calculation for optimizing the process recipe; and a host computer; the substrate processing apparatus, the data processing unit, and the host computer being connected to each other through a network. The present invention includes the steps of: measuring a film thickness of a substrate to be processed that has been subjected to a film deposition process by the substrate processing apparatus; sending a command for conducting a process-recipe optimizing process from the host computer to the substrate processing apparatus, when the measured film thickness is deviated from a target film thickness and the deviation is beyond an allowable range; and in response to the command for conducing a process-recipe optimizing process from the host computer, sending required data from the substrate processing apparatus to the data processing unit, causing the data processing unit to execute a process-recipe optimizing calculation to calculate an optimum process recipe for achievement of the target film thickness, and updating the process recipe in the substrate processing apparatus based on the calculated result.
摘要翻译： 本发明是一种优化基板处理系统的工艺配方的方法，包括：基板处理装置，其根据处理配方进行待加工基板的成膜处理; 数据处理单元，其执行用于优化处理配方的计算; 和主机; 基板处理装置，数据处理单元和主机通过网络彼此连接。 本发明包括以下步骤：测量由基板处理装置进行的膜沉积处理的被处理基板的膜厚; 当测量的膜厚度偏离目标膜厚度并且偏差超出允许范围时，发送用于进行从主机到基板处理装置的处理配方优化处理的命令; 并且响应于从主计算机进行处理配方优化处理的命令，将所需数据从基板处理装置发送到数据处理单元，使数据处理单元执行处理配方优化计算以计算最佳值 用于实现目标膜厚度的处理配方，以及基于计算结果更新基板处理装置中的处理配方。
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公开(公告)号：US07139627B2
公开(公告)日：2006-11-21
申请号：US10487973
申请日：2002-08-28
申请人： Asami Obara , Yuichi Takenaga
发明人： Asami Obara , Yuichi Takenaga
IPC分类号： G06F19/00
CPC分类号： H01L21/67276 , C23C16/52 , G05B19/4099 , G05B2219/32182 , G05B2219/45031 , H01L21/67253 , H01L22/20 , Y02P90/22
摘要： Plural processing apparatuses 3 such as CVD apparatuses 31 and diffusion apparatuses 33, measuring apparatuses 5, and a control computer 7 for management are connected through a LAN 9. Each processing apparatuses 3 stores control data for performing a treatment. The control computer 7 also stores the control data for the processing apparatuses 3. The control computer 7 makes each processing apparatus perform a treatment for calibration. The control computer 7 receives a result of the treatment performed by the processing apparatus 3 to be calibrated, and calibrates the control data stored in the control computer 7 based on the treatment result. The control computer sends the calibrated control data to the processing apparatus 3 after completion of the calibration procedure. The processing apparatus 3 stores the calibrated control data, which is used for subsequently performed treatment.
摘要翻译： 通过LAN9连接诸如CVD装置31和扩散装置33，测量装置5和用于管理的控制计算机7之类的多个处理装置3。 每个处理装置3存储用于进行处理的控制数据。 控制计算机7还存储处理装置3的控制数据。 控制计算机7使每个处理装置进行校准处理。 控制计算机7接收由待校准的处理装置3执行的处理结果，并且基于处理结果校准存储在控制计算机7中的控制数据。 控制计算机在校准程序完成之后将校准的控制数据发送到处理装置3。 处理装置3存储用于随后执行的处理的校准控制数据。
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公开(公告)号：US07738983B2
公开(公告)日：2010-06-15
申请号：US11905842
申请日：2007-10-04
申请人： Kaname Yamaji , Kiyoshi Suzuki , Yuichi Takenaga
发明人： Kaname Yamaji , Kiyoshi Suzuki , Yuichi Takenaga
IPC分类号： G06F19/00
CPC分类号： C23C16/52 , G05B13/021 , H01L21/67005 , H01L22/12 , H01L22/20
摘要： The present invention is a method of optimizing a process recipe of a substrate processing system including: a substrate processing apparatus that performs a film deposition process of a substrate to be processed according to a process recipe; a data processing unit that executes a calculation for optimizing the process recipe; and a host computer; the substrate processing apparatus, the data processing unit, and the host computer being connected to each other through a network. The present invention includes the steps of: measuring a film thickness of a substrate to be processed that has been subjected to a film deposition process by the substrate processing apparatus; sending a command for conducting a process-recipe optimizing process from the host computer to the substrate processing apparatus, when the measured film thickness is deviated from a target film thickness and the deviation is beyond an allowable range; and in response to the command for conducing a process-recipe optimizing process from the host computer, sending required data from the substrate processing apparatus to the data processing unit, causing the data processing unit to execute a process-recipe optimizing calculation to calculate an optimum process recipe for achievement of the target film thickness, and updating the process recipe in the substrate processing apparatus based on the calculated result.
摘要翻译： 本发明是一种优化基板处理系统的工艺配方的方法，包括：基板处理装置，其根据处理配方进行待加工基板的成膜处理; 数据处理单元，其执行用于优化处理配方的计算; 和主机; 基板处理装置，数据处理单元和主机通过网络彼此连接。 本发明包括以下步骤：测量由基板处理装置进行的膜沉积处理的被处理基板的膜厚; 当测量的膜厚度偏离目标膜厚度并且偏差超出允许范围时，发送用于进行从主机到基板处理装置的处理配方优化处理的命令; 并且响应于从主计算机进行处理配方优化处理的命令，将所需数据从基板处理装置发送到数据处理单元，使数据处理单元执行处理配方优化计算以计算最佳值 用于实现目标膜厚度的处理配方，以及基于计算结果更新基板处理装置中的处理配方。
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9.发明申请公开(公告)号：US20090110824A1
公开(公告)日：2009-04-30
申请号：US12289463
申请日：2008-10-28
CPC分类号： C23C16/481 , C23C16/52
摘要： In accordance with a set temperature profile including: a first step in which a temperature is varied from a first temperature to a second temperature during a first time period; a second step in which the temperature is maintained at the second temperature during a second time period; and a third step in which the temperature is varied from the second temperature to a third temperature; a substrate is subjected to a film deposition process. The first temperature, the second temperature, and the third temperature are determined based on the first relationship between temperature and film thickness, the measured film thicknesses at the plurality of positions, and a predetermined target film thickness. There are calculated expected film thicknesses at a plurality of positions on a substrate to be actually processed in accordance with the set temperature profile corresponding to the determined first temperature, the determined second temperature, and the determined third temperature. When the expected film thicknesses at the plurality of positions are not within a predetermined allowable range with respect to the predetermined target film thickness, at least one of the first time period, the second time period, and the third time period is varied.
摘要翻译： 根据设定温度曲线图，包括：第一步骤，其中温度在第一时间段内从第一温度变化到第二温度; 在第二时间段内将温度保持在第二温度的第二步骤; 以及第三步骤，其中温度从第二温度变化到第三温度; 对基板进行成膜处理。 基于温度和膜厚度之间的第一关系，多个位置处测量的膜厚度和预定的目标膜厚度来确定第一温度，第二温度和第三温度。 根据对应于所确定的第一温度，确定的第二温度和确定的第三温度的设定温度曲线，计算待实际处理的基板上的多个位置处的预期膜厚度。 当多个位置处的预期膜厚度相对于预定目标膜厚度不在预定的允许范围内时，第一时间段，第二时间段和第三时间段中的至少一个是变化的。
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公开(公告)号：US08840407B2
公开(公告)日：2014-09-23
申请号：US13533220
申请日：2012-06-26
申请人： Yasuhiro Nose , Yuichi Takenaga
发明人： Yasuhiro Nose , Yuichi Takenaga
CPC分类号： H01R12/716 , H01R12/707
摘要： Provided is a connector mountable on a board. The connector comprises a plurality of contacts, a housing holding the contacts, and a monitored member attached to the housing. The monitored member comprises a marker portion and an abutment portion brought into abutment with the board when the connector is mounted on the board in a vertical direction. The abutment portion is apart from the marker portion by a predetermined distance in the vertical direction. The height of the housing is indirectly measured by investigating a position of the marker portion.
摘要翻译： 提供了可安装在板上的连接器。 连接器包括多个触点，保持触点的壳体和附接到壳体的被监视构件。 当所述连接器沿垂直方向安装在所述板上时，被监视构件包括标记部分和与所述板邻接的抵接部分。 邻接部分在垂直方向上与标记部分分开预定距离。 通过调查标记部分的位置来间接测量壳体的高度。
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