PHOTO MASK, EXPOSURE METHOD USING THE SAME, AND METHOD OF GENERATING DATA
    1.
    发明申请
    PHOTO MASK, EXPOSURE METHOD USING THE SAME, AND METHOD OF GENERATING DATA 失效
    照片掩模,使用其的曝光方法和产生数据的方法

    公开(公告)号:US20080222597A1

    公开(公告)日:2008-09-11

    申请号:US12118578

    申请日:2008-05-09

    IPC分类号: G06F17/50

    CPC分类号: G03F1/36 G03F1/30 G03F1/32

    摘要: A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction, the assist pattern being located at a specified distance from the pattern row in a direction orthogonal to the one direction, the longitudinal direction of the assist pattern being substantially parallel with the one direction, the longitudinal length of the assist pattern being equivalent to or larger than the longitudinal length of the pattern row, the assist pattern being not transferred to the substrate.

    摘要翻译: 一种光掩模,其形成有使用曝光装置转印到基板的图案,所述光掩模包括具有由屏蔽部分或半透明膜围绕并沿着一个方向布置的三个或更多孔图案的图案行和辅助图案包围 通过屏蔽部分或半透明膜并具有纵向方向和纬度方向,辅助图案位于与图案行在与该一个方向正交的方向上特定距离处,辅助图案的纵向方向基本上平行于 一个方向,辅助图案的纵向长度等于或大于图案行的纵向长度,辅助图案不被转印到基底。

    Photo mask, exposure method using the same, and method of generating data
    2.
    发明授权
    Photo mask, exposure method using the same, and method of generating data 失效
    照片掩模,使用其的曝光方法以及生成数据的方法

    公开(公告)号:US07384712B2

    公开(公告)日:2008-06-10

    申请号:US10832995

    申请日:2004-04-28

    IPC分类号: G03F1/00

    CPC分类号: G03F1/36 G03F1/30 G03F1/32

    摘要: A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction, the assist pattern being located at a specified distance from the pattern row in a direction orthogonal to the one direction, the longitudinal direction of the assist pattern being substantially parallel with the one direction, the longitudinal length of the assist pattern being equivalent to or larger than the longitudinal length of the pattern row, the assist pattern being not transferred to the substrate.

    摘要翻译: 一种光掩模,其形成有使用曝光装置转印到基板的图案,所述光掩模包括具有由屏蔽部分或半透明膜围绕并沿着一个方向布置的三个或更多孔图案的图案行和辅助图案包围 通过屏蔽部分或半透明膜并具有纵向方向和纬度方向,辅助图案位于与图案行在与该一个方向正交的方向上特定距离处,辅助图案的纵向方向基本上平行于 一个方向,辅助图案的纵向长度等于或大于图案行的纵向长度,辅助图案不被转印到基底。

    Photo mask, exposure method using the same, and method of generating data
    3.
    发明申请
    Photo mask, exposure method using the same, and method of generating data 失效
    照片掩模,使用其的曝光方法以及生成数据的方法

    公开(公告)号:US20050003305A1

    公开(公告)日:2005-01-06

    申请号:US10832995

    申请日:2004-04-28

    CPC分类号: G03F1/36 G03F1/30 G03F1/32

    摘要: A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction, the assist pattern being located at a specified distance from the pattern row in a direction orthogonal to the one direction, the longitudinal direction of the assist pattern being substantially parallel with the one direction, the longitudinal length of the assist pattern being equivalent to or larger than the longitudinal length of the pattern row, the assist pattern being not transferred to the substrate.

    摘要翻译: 一种光掩模,其形成有使用曝光装置转印到基板的图案,所述光掩模包括具有由屏蔽部分或半透明膜围绕并沿着一个方向布置的三个或更多孔图案的图案行和辅助图案包围 通过屏蔽部分或半透明膜并具有纵向方向和纬度方向,辅助图案位于与图案行在与该一个方向正交的方向上特定距离处,辅助图案的纵向方向基本上平行于 一个方向,辅助图案的纵向长度等于或大于图案行的纵向长度,辅助图案不被转印到基底。

    Photo mask, exposure method using the same, and method of generating data
    4.
    发明授权
    Photo mask, exposure method using the same, and method of generating data 失效
    照片掩模,使用其的曝光方法以及生成数据的方法

    公开(公告)号:US07794899B2

    公开(公告)日:2010-09-14

    申请号:US12118578

    申请日:2008-05-09

    IPC分类号: G03F1/00

    CPC分类号: G03F1/36 G03F1/30 G03F1/32

    摘要: A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction, the assist pattern being located at a specified distance from the pattern row in a direction orthogonal to the one direction, the longitudinal direction of the assist pattern being substantially parallel with the one direction, the longitudinal length of the assist pattern being equivalent to or larger than the longitudinal length of the pattern row, the assist pattern being not transferred to the substrate.

    摘要翻译: 一种光掩模,其形成有使用曝光装置转印到基板的图案,所述光掩模包括具有由屏蔽部分或半透明膜围绕并沿着一个方向布置的三个或更多孔图案的图案行和辅助图案包围 通过屏蔽部分或半透明膜并具有纵向方向和纬度方向,辅助图案位于与图案行在与该一个方向正交的方向上特定距离处,辅助图案的纵向方向基本上平行于 一个方向,辅助图案的纵向长度等于或大于图案行的纵向长度,辅助图案不被转印到基底。

    Photo mask, exposure method using the same, and method of generating data

    公开(公告)号:US07662523B2

    公开(公告)日:2010-02-16

    申请号:US12118510

    申请日:2008-05-09

    IPC分类号: G03F1/00 G03F7/20

    CPC分类号: G03F1/36 G03F1/30 G03F1/32

    摘要: A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction, the assist pattern being located at a specified distance from the pattern row in a direction orthogonal to the one direction, the longitudinal direction of the assist pattern being substantially parallel with the one direction, the longitudinal length of the assist pattern being equivalent to or larger than the longitudinal length of the pattern row, the assist pattern being not transferred to the substrate.

    PHOTO MASK, EXPOSURE METHOD USING THE SAME, AND METHOD OF GENERATING DATA

    公开(公告)号:US20080220377A1

    公开(公告)日:2008-09-11

    申请号:US12118510

    申请日:2008-05-09

    IPC分类号: G03F7/20

    CPC分类号: G03F1/36 G03F1/30 G03F1/32

    摘要: A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction, the assist pattern being located at a specified distance from the pattern row in a direction orthogonal to the one direction, the longitudinal direction of the assist pattern being substantially parallel with the one direction, the longitudinal length of the assist pattern being equivalent to or larger than the longitudinal length of the pattern row, the assist pattern being not transferred to the substrate.