公开(公告)号：US5089239A

公开(公告)日：1992-02-18

申请号：US509846

申请日：1990-04-17

申请人： Koji Mizuishi ,  Isamu Harada ,  Yasushi Nakamura ,  Michiaki Oda ,  Seiichiro Ohtsuka ,  Yoshihiro Hirano ,  Masahiko Urano

发明人： Koji Mizuishi ,  Isamu Harada ,  Yasushi Nakamura ,  Michiaki Oda ,  Seiichiro Ohtsuka ,  Yoshihiro Hirano ,  Masahiko Urano

IPC分类号： C30B15/20 ,  C30B15/30

CPC分类号： C30B15/30 ,  C30B15/20 ,  Y10T117/1072

摘要： A single crystal pulling apparatus having a wire which is used to pull a crystal is provided with a novel wire vibration prevention mechanism. The wire vibration prevention mechanism includes wire restriction devices which restrict the movement of the wire to movement in the vertical direction. The wire restriction devices may be mechanically driven in the horizontal direction in order to center the pulled crystal. The wire restriction devices are driven by pneumatic air cylinders. Use of the wire vibration prevention mechanism avoids the formation of deformed growth of the pulled crystal and thus reduces the occurrence of dislocations in the pulled crystal.

公开(公告)号：US5106593A

公开(公告)日：1992-04-21

申请号：US631850

申请日：1990-12-21

申请人： Koji Mizuishi ,  Michiaki Oda ,  Yasushi Nakamura ,  Seiichiro Ohtsuka ,  Atsushi Shiozawa ,  Fumio Yamada ,  Masahiro Mashimo ,  Tooru Ohara ,  Eizi Namiki

发明人： Koji Mizuishi ,  Michiaki Oda ,  Yasushi Nakamura ,  Seiichiro Ohtsuka ,  Atsushi Shiozawa ,  Fumio Yamada ,  Masahiro Mashimo ,  Tooru Ohara ,  Eizi Namiki

IPC分类号： C30B15/30

CPC分类号： C30B15/30 ,  Y10S117/917 ,  Y10T117/106 ,  Y10T117/1072

摘要： An apparatus for producing a single crystal grown by Czochralski method includes a winding drum disposed in a case for winding up and down a flexible pull wire, a power transmission mechanism for driving the winding drum, and a bearing unit for rotatably supporting the winding drum. The power transmission mechanism and the bearing unit are disposed outside the case and isolated from the furnace atmosphere surrounding the winding drum and the pull wire in the case. With this construction, metallic dust produced by abrasion from the power transmission mechanism and the bearing unit has no influence on the condition of the furnace atmosphere and hence the quality of a single crystal being pulled upwardly by the pull wire.

公开(公告)号：US5868835A

公开(公告)日：1999-02-09

申请号：US911352

申请日：1997-08-07

申请人： Naoki Nagai ,  Michiaki Oda ,  Seiichiro Ohtsuka ,  Isamu Harada

发明人： Naoki Nagai ,  Michiaki Oda ,  Seiichiro Ohtsuka ,  Isamu Harada

IPC分类号： C30B15/20 ,  C30B15/02 ,  C30B29/06 ,  C30B35/00

CPC分类号： C30B15/02 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1056

摘要： A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or backed-up supply of the silicon granules in the feed conduit is detected by a sensor provided on the feed conduit. A smooth and high-rate feed of the silicon granules is ensured by controlling the feed rate of the silicon granules from the feeder to the feed conduit and/or a descending velocity of the crucible by signals generated in the sensor as a function of the amount of the holdup or backed-up supply in the feed conduit.

摘要翻译： 包括进料器和进料管道的再充电系统在通过切克劳斯基法生长单晶硅棒的运行或操作之后将多晶硅颗粒补给到坩埚中，从而准备下一次晶体生长。 进料管道中硅颗粒的滞留量或备用供应量由供料管道上提供的传感器检测。 通过根据传感器中产生的信号控制硅颗粒从进料器到进料管的进料速率和/或坩埚的下降速度来确保硅颗粒的平滑和高速进料量作为量 供应管道中的滞留或备用供应。

公开(公告)号：US5690733A

公开(公告)日：1997-11-25

申请号：US552494

申请日：1995-11-09

申请人： Naoki Nagai ,  Michiaki Oda ,  Seiichiro Ohtsuka ,  Isamu Harada

发明人： Naoki Nagai ,  Michiaki Oda ,  Seiichiro Ohtsuka ,  Isamu Harada

IPC分类号： C30B15/20 ,  C30B15/02 ,  C30B29/06 ,  C30B35/00 ,  C30B15/04

CPC分类号： C30B15/02 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1056

摘要： A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or backed-up supply of the silicon granules in the feed conduit is detected by a sensor provided on the feed conduit. A smooth and high-rate feed of the silicon granules is ensured by controlling the feed rate of the silicon granules from the feeder to the feed conduit and/or a descending velocity of the crucible by signals generated in the sensor as a function of the amount of the holdup or backed-up supply in the feed conduit.

摘要翻译： 包括进料器和进料管道的再充电系统在通过切克劳斯基法生长单晶硅棒的运行或操作之后将多晶硅颗粒补给到坩埚中，从而准备下一次晶体生长。 进料管道中硅颗粒的滞留量或备用供应量由供料管道上提供的传感器检测。 通过根据传感器中产生的信号控制硅颗粒从进料器到进料管的进料速率和/或坩埚的下降速度来确保硅颗粒的平滑和高速进料量作为量 供应管道中的滞留或备用供应。

公开(公告)号：US5129986A

公开(公告)日：1992-07-14

申请号：US614587

申请日：1990-11-16

申请人： Hidetoshi Seki ,  Seiichiro Ohtsuka ,  Masahiko Baba

发明人： Hidetoshi Seki ,  Seiichiro Ohtsuka ,  Masahiko Baba

IPC分类号： C30B15/20 ,  C30B15/00 ,  C30B29/06

CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10T117/1008 ,  Y10T117/1032

摘要： A method for controlling a specific resistance of a single crystal in a Czochralski-method type single crystal pulling apparatus having a hermetical chamber in which the single crystal is pulled up from a polycrystal melt and an inert gas supply and exhaust system by means of which an inert gas is supplied to the hermetical chamber and exhausted therefrom; the method being characterized in that the pneumatic pressure in the hermetical chamber and the supply rate of the inert gas are controlled in accordance with a prepared control pattern with respect to the passage of pulling time.