公开(公告)号：US5900055A

公开(公告)日：1999-05-04

申请号：US829894

申请日：1997-03-25

申请人： Naoki Nagai ,  Koji Mizuishi ,  Michiaki Oda

发明人： Naoki Nagai ,  Koji Mizuishi ,  Michiaki Oda

IPC分类号： C30B15/04 ,  C30B29/06 ,  H01L21/208 ,  C30B15/02

CPC分类号： C30B15/04 ,  Y10T117/1052 ,  Y10T117/1056

摘要： A silicon monocrystal is manufactured according to the continuously charged Czochralski method in which a double crucible is used which includes an outer crucible and an inner crucible which communicate with each other through pores. A dopant is charged to the silicon melt stored in the double crucible before commencing pulling of a silicon monocrystal such that the ratio of the dopant concentration of the silicon melt stored in the outer crucible to the dopant concentration of the silicon melt stored in the inner crucible becomes greater than an effective segregation coefficient of the dopant. The silicon monocrystal is then pulled while silicon material is charged to the silicon melt within the outer crucible, during which the dopant concentration ratio becomes equal to the effective segregation coefficient and then becomes smaller than the effective segregation coefficient. When the dopant concentration ratio becomes smaller than the effective segregation coefficient, the dopant is charged to the silicon melt stored in the outer crucible. The above operation is repeated, so that the specific resistance of the silicon monocrystal pulled from the double crucible can be controlled within a desired range using commonly-employed dopant.

摘要翻译： 根据连续充电的Czochralski法制造硅单晶，其中使用包括通过孔彼此连通的外坩埚和内坩埚的双坩埚。 在开始拉制硅单晶之前，将掺杂剂充入存储在双坩埚中的硅熔体，使得存储在外坩埚中的硅熔体的掺杂剂浓度与存储在内坩埚中的硅熔体的掺杂剂浓度之比 变得大于掺杂剂的有效偏析系数。 然后拉伸硅单晶，同时将硅材料充入外坩埚内的硅熔体，在此期间掺杂剂浓度比变得等于有效偏析系数，然后变得小于有效偏析系数。 当掺杂剂浓度比变得小于有效偏析系数时，掺杂剂被加到存储在外坩埚中的硅熔体中。 重复上述操作，使得从双坩埚拉出的单晶硅的电阻率可以使用常用的掺杂剂控制在期望的范围内。

公开(公告)号：US5868835A

公开(公告)日：1999-02-09

申请号：US911352

申请日：1997-08-07

申请人： Naoki Nagai ,  Michiaki Oda ,  Seiichiro Ohtsuka ,  Isamu Harada

发明人： Naoki Nagai ,  Michiaki Oda ,  Seiichiro Ohtsuka ,  Isamu Harada

IPC分类号： C30B15/20 ,  C30B15/02 ,  C30B29/06 ,  C30B35/00

CPC分类号： C30B15/02 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1056

摘要： A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or backed-up supply of the silicon granules in the feed conduit is detected by a sensor provided on the feed conduit. A smooth and high-rate feed of the silicon granules is ensured by controlling the feed rate of the silicon granules from the feeder to the feed conduit and/or a descending velocity of the crucible by signals generated in the sensor as a function of the amount of the holdup or backed-up supply in the feed conduit.

摘要翻译： 包括进料器和进料管道的再充电系统在通过切克劳斯基法生长单晶硅棒的运行或操作之后将多晶硅颗粒补给到坩埚中，从而准备下一次晶体生长。 进料管道中硅颗粒的滞留量或备用供应量由供料管道上提供的传感器检测。 通过根据传感器中产生的信号控制硅颗粒从进料器到进料管的进料速率和/或坩埚的下降速度来确保硅颗粒的平滑和高速进料量作为量 供应管道中的滞留或备用供应。

公开(公告)号：US5733368A

公开(公告)日：1998-03-31

申请号：US804123

申请日：1997-02-20

申请人： Naoki Nagai ,  Isamu Harada ,  Michiaki Oda

发明人： Naoki Nagai ,  Isamu Harada ,  Michiaki Oda

IPC分类号： C30B15/02 ,  C30B15/22 ,  C30B29/06 ,  H01L21/208

CPC分类号： C30B15/22 ,  C30B15/02 ,  Y10T117/1068

摘要： In a method of manufacturing a silicon monocrystal using a continuous Czochralski method, a silicon monocrystal is pulled from a silicon melt in a crucible while a silicon material is fed to the crucible. Supply of the silicon material is suspended until the temperature distribution of the silicon melt becomes stable after initiation of a straight body forming process, and the supply of the silicon material is commenced when the temperature distribution of the silicon melt has become stable. The feed rate of the silicon material is gradually increased until the feed rate becomes equal to a solidification rate of the silicon melt after the supply of the silicon material has been commenced. This method prevents the silicon monocrystal from becoming a polycrystal during the manufacture thereof.

摘要翻译： 在使用连续切克劳斯基法制造硅单晶的方法中，将硅材料供给到坩埚中，从坩埚中的硅熔体中拉出硅单晶。 硅材料的供给被悬浮直到硅熔体的温度分布在直体形成过程开始后变得稳定，并且当硅熔体的温度分布变得稳定时，硅材料的供应开始。 硅材料的进料速率逐渐增加，直到开始供应硅材料之后，进料速率等于硅熔体的固化速率。 该方法在制造时防止硅单晶成为多晶。

公开(公告)号：US5690733A

公开(公告)日：1997-11-25

申请号：US552494

申请日：1995-11-09

申请人： Naoki Nagai ,  Michiaki Oda ,  Seiichiro Ohtsuka ,  Isamu Harada

发明人： Naoki Nagai ,  Michiaki Oda ,  Seiichiro Ohtsuka ,  Isamu Harada

IPC分类号： C30B15/20 ,  C30B15/02 ,  C30B29/06 ,  C30B35/00 ,  C30B15/04

CPC分类号： C30B15/02 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1056

摘要： A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or backed-up supply of the silicon granules in the feed conduit is detected by a sensor provided on the feed conduit. A smooth and high-rate feed of the silicon granules is ensured by controlling the feed rate of the silicon granules from the feeder to the feed conduit and/or a descending velocity of the crucible by signals generated in the sensor as a function of the amount of the holdup or backed-up supply in the feed conduit.

摘要翻译： 包括进料器和进料管道的再充电系统在通过切克劳斯基法生长单晶硅棒的运行或操作之后将多晶硅颗粒补给到坩埚中，从而准备下一次晶体生长。 进料管道中硅颗粒的滞留量或备用供应量由供料管道上提供的传感器检测。 通过根据传感器中产生的信号控制硅颗粒从进料器到进料管的进料速率和/或坩埚的下降速度来确保硅颗粒的平滑和高速进料量作为量 供应管道中的滞留或备用供应。

公开(公告)号：US09193597B2

公开(公告)日：2015-11-24

申请号：US13386926

申请日：2010-07-07

申请人： Naoki Nagai ,  Takaaki Shimizu ,  Katsuhiro Uehara ,  Tohru Kubota

发明人： Naoki Nagai ,  Takaaki Shimizu ,  Katsuhiro Uehara ,  Tohru Kubota

IPC分类号： C01B33/107

CPC分类号： C01B33/10778

摘要： The present invention provides a method for obtaining high purity chlorosilanes from chlorosilanes containing boron impurities and phosphorus impurities. On the basis of the finding that solid by-product formation in the purification of chlorosilanes by adding an aromatic aldehyde results from a catalytic reaction by iron ions or rust-like iron, a Lewis base having a masking effect is added to chlorosilanes. Examples of the Lewis base include a divalent sulfur-containing compound and an alkoxysilane. The divalent sulfur-containing compound is preferably a compound represented by the formula: R—S—R′ (wherein R is a hydrocarbon group or a carbonyl group; and the sum of the carbon atoms in R and R′ is 7 or more), and the alkoxysilane is preferably a compound represented by the formula: RxSi(OR′)4-x (wherein R and R′ are each an alkyl group having 1 to 20 carbon atoms).

摘要翻译： 本发明提供从含有硼杂质和磷杂质的氯硅烷中获得高纯度氯硅烷的方法。 基于通过添加芳族醛的氯硅烷纯化产生固体副产物的结果是由铁离子或铁锈铁的催化反应产生的，将具有掩蔽效应的路易斯碱加入到氯硅烷中。 路易碱碱的实例包括二价含硫化合物和烷氧基硅烷。 二价含硫化合物优选为由下式表示的化合物：R-S-R'（其中R为烃基或羰基; R和R'中的碳原子总数为7以上） 烷氧基硅烷优选为下式所示的化合物：RxSi（OR'）4-x（式中，R和R'分别为碳原子数为1〜20的烷基）。

公开(公告)号：US5876496A

公开(公告)日：1999-03-02

申请号：US827105

申请日：1997-03-17

申请人： Naoki Nagai ,  Chihiro Tashiro ,  Atsushi Ozaki ,  Michiaki Oda

发明人： Naoki Nagai ,  Chihiro Tashiro ,  Atsushi Ozaki ,  Michiaki Oda

IPC分类号： C30B15/02 ,  C30B29/06

CPC分类号： C30B15/02 ,  Y10T117/1056 ,  Y10T117/1064

摘要： A feeding reservoir 11 for intermittently or continuously feeding granular raw material into a pulling apparatus 1, a chamber 13 connected to the feeding reservoir 11 through a gate valve 12, a granular raw material supply section 15 by which the granular raw material is supplied to the chamber 13 through a gate valve 14 and a pressure adjustment means 20 which adjusts the inner pressure of the chamber 13 is provided, and the granular raw material is fed to the feeding reservoir 11 while maintaining the inner pressure of the feeding reservoir 11 as the same as the inner pressure of the single crystal pulling apparatus 1. This feeding method and structure makes it possible to feed an additional amount of granular raw material even during the continuous charging process and or the recharging process without interrupting the process and also to pull a heavy single crystal rod with a large diameter without increasing the capacity of the feeding reservoir.

摘要翻译： 用于将颗粒状原料间歇地或连续地供给到牵引装置1的供给储存器11，通过闸阀12连接到供给储存器11的室13，粒状原料供给部15，向颗粒状原料供给部 设置通过闸阀14的室13和调节室13的内部压力的压力调节装置20，并且将颗粒状原料供给到供给储存器11，同时保持供给储存器11的内部压力相同 作为单晶拉制装置1的内压。该供给方法和结构使得即使在连续充电过程和充电过程中也可以不间断地进行加工而再次加入附加量的颗粒状原料 单晶棒直径大，不增加供料槽的容量。

公开(公告)号：US20120121493A1

公开(公告)日：2012-05-17

申请号：US13386926

申请日：2010-07-07

申请人： Naoki Nagai ,  Takaaki Shimizu ,  Katsuhiro Uehara ,  Tohru Kubota

发明人： Naoki Nagai ,  Takaaki Shimizu ,  Katsuhiro Uehara ,  Tohru Kubota

IPC分类号： C01B33/107

CPC分类号： C01B33/10778

摘要： The present invention provides a method for obtaining high purity chlorosilanes from chlorosilanes containing boron impurities and phosphorus impurities. On the basis of the finding that solid by-product formation in the purification of chlorosilanes by adding an aromatic aldehyde results from a catalytic reaction by iron ions or rust-like iron, a Lewis base having a masking effect is added to chlorosilanes. Examples of the Lewis base include a divalent sulfur-containing compound and an alkoxysilane. The divalent sulfur-containing compound is preferably a compound represented by the formula: R—S—R′ (wherein R is a hydrocarbon group or a carbonyl group; and the sum of the carbon atoms in R and R′ is 7 or more), and the alkoxysilane is preferably a compound represented by the formula: RxSi(OR′)4-x (wherein R and R′ are each an alkyl group having 1 to 20 carbon atoms).

摘要翻译： 本发明提供从含有硼杂质和磷杂质的氯硅烷中获得高纯度氯硅烷的方法。 基于通过添加芳族醛的氯硅烷纯化产生固体副产物的结果是由铁离子或铁锈铁的催化反应产生的，将具有掩蔽效应的路易斯碱加入到氯硅烷中。 路易碱碱的实例包括二价含硫化合物和烷氧基硅烷。 二价含硫化合物优选为由下式表示的化合物：R-S-R'（其中R为烃基或羰基; R和R'中的碳原子总数为7以上） 烷氧基硅烷优选为下式所示的化合物：RxSi（OR'）4-x（式中，R和R'分别为碳原子数为1〜20的烷基）。

公开(公告)号：US20070266930A1

公开(公告)日：2007-11-22

申请号：US11587061

申请日：2005-03-31

申请人： Ryoji Hoshi ,  Naoki Nagai ,  Izumi Fusegawa

发明人： Ryoji Hoshi ,  Naoki Nagai ,  Izumi Fusegawa

IPC分类号： C30B15/20

CPC分类号： C30B15/04 ,  C30B29/06

摘要： A method for producing a silicon single crystal by the Czochralski method with carbon-doping comprising: charging a polycrystalline silicon material and any one of a carbon dopant selected from the group consisting of an organic compound, an organic compound and a silicon wafer, carbon powder and a silicon wafer, an organic compound and carbon powder, and an organic compound and carbon powder and a silicon wafer into a crucible and melting the polycrystalline silicon material and the carbon dopant; and then growing a silicon single crystal from the melt of the polycrystalline silicon material and the carbon dopant. And a carbon-doped silicon single crystal produced by the method. Thereby, there is provided a method for producing a silicon single crystal with carbon-doping in which the crystal can be doped with carbon easily at low cost, and carbon concentration in the crystal can be controlled precisely.

摘要翻译： 一种利用Czochralski法进行碳掺杂生产硅单晶的方法，包括：将多晶硅材料和选自有机化合物，有机化合物和硅晶片的碳掺杂物中的任何一种，碳粉末 将硅晶片，有机化合物和碳粉末以及有机化合物和碳粉末和硅晶片倒入坩埚中并熔化多晶硅材料和碳掺杂剂; 然后从多晶硅材料和碳掺杂剂的熔体中生长硅单晶。 和通过该方法制备的掺碳硅单晶。 因此，提供了一种制造具有碳掺杂的硅单晶的方法，其中可以容易地以低成本掺杂碳，并且可以精确地控制晶体中的碳浓度。

公开(公告)号：US5779790A

公开(公告)日：1998-07-14

申请号：US814107

申请日：1997-03-10

申请人： Toshinari Murai ,  Naoki Nagai

发明人： Toshinari Murai ,  Naoki Nagai

IPC分类号： C30B15/00 ,  C30B15/36 ,  C30B29/06 ,  H01L21/208 ,  C30B15/20

CPC分类号： C30B29/06 ,  C30B15/36 ,  Y10S117/902

摘要： In a method of manufacturing a silicon monocrystal using the Czochralski method, a seed crystal is brought into contact with silicon melt and is then pulled such that after a neck portion is formed, a silicon monocrystal is grown below the neck portion. The crystal has a hollow portion which has an opening in a contact surface of the seed crystal to be brought into contact with the silicon melt. Alternatively, the seed crystal has a hollow portion which will have an opening in the contact surface of the seed crystal when the contact surface is brought into contact with the silicon melt. Use of such seed crystals makes it possible to increase the strength of the neck portion and to pull a heavy and long silicon monocrystal having a large diameter.

摘要翻译： 在使用Czochralski法制造硅单晶的方法中，使晶种与硅熔体接触，然后被拉动，使得在形成颈部之后，在颈部下方生长硅单晶。 晶体具有中空部分，该中空部分在籽晶的接触表面上具有与硅熔体接触的开口。 或者，晶种具有中空部分，当接触表面与硅熔体接触时，其将具有在晶种的接触表面中的开口。 使用这种晶种可以提高颈部的强度并拉出具有大直径的重且长的硅单晶。

公开(公告)号：US07909930B2

公开(公告)日：2011-03-22

申请号：US11587061

申请日：2005-03-31

申请人： Ryoji Hoshi ,  Naoki Nagai ,  Izumi Fusegawa

发明人： Ryoji Hoshi ,  Naoki Nagai ,  Izumi Fusegawa

IPC分类号： C30B15/04

CPC分类号： C30B15/04 ,  C30B29/06

摘要： A method for producing a silicon single crystal by the Czochralski method with carbon-doping comprising: charging a polycrystalline silicon material and any one of a carbon dopant selected from the group consisting of an organic compound, an organic compound and a silicon wafer, carbon powder and a silicon wafer, an organic compound and carbon powder, and an organic compound and carbon powder and a silicon wafer into a crucible and melting the polycrystalline silicon material and the carbon dopant; and then growing a silicon single crystal from the melt of the polycrystalline silicon material and the carbon dopant. And a carbon-doped silicon single crystal produced by the method. Thereby, there is provided a method for producing a silicon single crystal with carbon-doping in which the crystal can be doped with carbon easily at low cost, and carbon concentration in the crystal can be controlled precisely.

摘要翻译： 一种利用Czochralski法进行碳掺杂生产硅单晶的方法，包括：将多晶硅材料和选自有机化合物，有机化合物和硅晶片的碳掺杂物中的任何一种，碳粉末 将硅晶片，有机化合物和碳粉末以及有机化合物和碳粉末和硅晶片倒入坩埚中并熔化多晶硅材料和碳掺杂剂; 然后从多晶硅材料和碳掺杂剂的熔体中生长硅单晶。 和通过该方法制备的掺碳硅单晶。 因此，提供了一种制造具有碳掺杂的硅单晶的方法，其中可以容易地以低成本掺杂碳，并且可以精确地控制晶体中的碳浓度。