公开(公告)号：US10586887B2

公开(公告)日：2020-03-10

申请号：US16036556

申请日：2018-07-16

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Yong-Hoon Cho ,  Hwanseop Yeo ,  JongHoi Cho

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/08 ,  H01L33/24 ,  H01L33/38 ,  G06F21/31 ,  H01L33/32 ,  G06N10/00 ,  H01L27/15

Abstract: Disclosed are a deterministic quantum emitter operating at room temperature in an optical communication wavelength using the intersubband transition of a nitride-based semiconductor quantum dot, a method of fabricating the same, and an operating method thereof. A method of fabricating a quantum emitter includes forming a three-dimensional (3-D) structure in a substrate, forming an n type-doped thin film at the upper part of the 3-D structure, forming a quantum dot over the n type-doped thin film, regrowing the 3-D structure in order to use the 3-D structure as an optical structure, depositing a metal thin film at a vertex of the 3-D structure, and connecting electrodes to an n type-doped area and the metal thin film, respectively. A carrier may be captured in the quantum dot by applying a voltage to the connected electrodes. The quantum emitter may be driven by optically exciting the quantum dot.

公开(公告)号：US20190027645A1

公开(公告)日：2019-01-24

申请号：US16036556

申请日：2018-07-16

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Yong-Hoon Cho ,  Hwanseop Yeo ,  JongHoi Cho

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  G06N99/00 ,  G06F21/31

CPC classification number: H01L33/06 ,  G06F21/31 ,  G06N10/00 ,  H01L27/153 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/387 ,  H01L2933/0016

Abstract: Disclosed are a deterministic quantum emitter operating at room temperature in an optical communication wavelength using the intersubband transition of a nitride-based semiconductor quantum dot, a method of fabricating the same, and an operating method thereof. A method of fabricating a quantum emitter includes forming a three-dimensional (3-D) structure in a substrate, forming an n type-doped thin film at the upper part of the 3-D structure, forming a quantum dot over the n type-doped thin film, regrowing the 3-D structure in order to use the 3-D structure as an optical structure, depositing a metal thin film at a vertex of the 3-D structure, and connecting electrodes to an n type-doped area and the metal thin film, respectively. A carrier may be captured in the quantum dot by applying a voltage to the connected electrodes. The quantum emitter may be driven by optically exciting the quantum dot.