公开(公告)号：US20130334522A1

公开(公告)日：2013-12-19

申请号：US13713396

申请日：2012-12-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Chong Yun Kang ,  Seok Jin Yoon ,  Young Ho Do ,  Ji Won Choi ,  Seung Hyub Baek ,  Hyun Cheol Song ,  Jin Sang Kim

IPC: H01L21/02 ,  H01L29/22

CPC classification number: H01L21/02565 ,  H01L29/22 ,  H01L41/113 ,  H01L41/31 ,  H01L41/313

Abstract: Provided is a method of fabricating an oxide thin film device using laser lift-off and an oxide thin film device fabricated by the same. The method includes: forming an oxide thin film on a growth substrate; bonding a temporary substrate on the oxide thin film; irradiating laser onto the growth substrate to separate the oxide thin film on which the temporary substrate has been bonded from the growth substrate; bonding a device substrate on the oxide thin film on which the temporary substrate has been bonded; and forming an upper electrode film on the oxide thin film. Therefore, it is possible to overcome problems caused by a defective layer by transferring an oxide thin film transferred on a polymer-based temporary substrate onto a device substrate, without using an interface on which a defective layer formed due to oxygen diffusion upon laser lift-off is formed.

Abstract translation: 提供一种使用激光剥离制造氧化物薄膜器件的方法和由其制造的氧化物薄膜器件。 该方法包括：在生长衬底上形成氧化物薄膜; 将临时衬底粘结在氧化物薄膜上; 将激光照射到所述生长衬底上以从所述生长衬底分离其上已经结合有所述临时衬底的氧化物薄膜; 将器件衬底接合在已经结合有临时衬底的氧化物薄膜上; 以及在所述氧化物薄膜上形成上电极膜。 因此，可以通过将在基于聚合物的临时衬底上转移的氧化物薄膜转印到器件衬底上来克服由缺陷层引起的问题，而不使用在激光提升时由于氧扩散而形成的缺陷层的界面， 关闭形成。

公开(公告)号：US11417516B2

公开(公告)日：2022-08-16

申请号：US16225432

申请日：2018-12-19

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  INSTITUTE FOR BASIC SCIENCE ,  ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seong Keun Kim ,  Woo Chui Lee ,  Sang Tae Kim ,  Hyun Cheol Song ,  Seung Hyub Baek ,  Ji Won Choi ,  Jin Sang Kim ,  Chong Yun Kang ,  Christopher W. Bielawski ,  Jung Hwan Yum ,  Eric S. Larsen

IPC: C01F3/02 ,  H01L21/02 ,  H01L27/108 ,  H01L49/02

Abstract: Provided is a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is made of a compound having a chemical formula of BexM1-xO, where M includes one of alkaline earth metals and x has a value greater than 0 and not greater than 0.19. A semiconductor memory device also is provided that includes a capacitor composed of a lower electrode; a dielectric layer disposed on the lower electrode; and an upper electrode disposed on the dielectric layer, wherein the dielectric layer has a rocksalt structure in a room temperature stable phase and is made of a compound having a chemical formula shown below, BexM1-xO, where M comprises an alkaline earth metal and x has a value greater than 0 and not greater than 0.19.

公开(公告)号：US09118000B2

公开(公告)日：2015-08-25

申请号：US13663781

申请日：2012-10-30

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Chong Yun Kang ,  Seok Jin Yoon ,  Young Ho Do ,  Ji Won Choi ,  Hyun Cheol Song ,  Seung Hyub Baek ,  Jin Sang Kim

IPC: H01L41/22 ,  H04R17/00 ,  H01L41/113 ,  H01L41/18 ,  H01L41/312 ,  H01L41/317

CPC classification number: H01L41/113 ,  H01L41/183 ,  H01L41/312 ,  H01L41/317 ,  H01L41/37 ,  Y10T29/42

Abstract: Provided are a method of manufacturing a flexible piezoelectric energy harvesting device using a piezoelectric composite, and a flexible piezoelectric energy harvesting device manufactured by the same. The method of manufacturing the flexible piezoelectric energy harvesting device includes: forming a first electrode layer on a first flexible substrate; spin-coating a piezoelectric composite layer on the first electrode layer, wherein the piezoelectric composite layer is produced by mixing piezoelectric powder with polymer; performing heat treatment on the piezoelectric composite layer to harden the piezoelectric composite layer; and bonding a second flexible substrate with a second electrode layer on the hardened piezoelectric composite layer. Therefore, it is possible to simplify a manufacturing process and manufacture a high-performance flexible piezoelectric energy harvesting device having various sizes and patterns.

Abstract translation: 提供一种制造使用压电复合材料的柔性压电能量收集装置的方法和由其制造的柔性压电能量收集装置。 柔性压电能量收集装置的制造方法包括：在第一柔性基板上形成第一电极层; 在第一电极层上旋涂压电复合层，其中压电复合层通过将压电粉末与聚合物混合而制成; 对压电复合层进行热处理，使压电复合层硬化; 以及在所述硬化的压电复合层上将第二柔性基板与第二电极层接合。 因此，可以简化制造工艺并制造具有各种尺寸和图案的高性能柔性压电能量收集装置。

公开(公告)号：US08828845B2

公开(公告)日：2014-09-09

申请号：US13713396

申请日：2012-12-13

Applicant: Korea Institute of Science and Technology

Inventor： Chong Yun Kang ,  Seok Jin Yoon ,  Young Ho Do ,  Ji Won Choi ,  Seung Hyub Baek ,  Hyun Cheol Song ,  Jin Sang Kim

IPC: H01L21/30 ,  H01L21/02 ,  H01L29/22 ,  H01L41/31

CPC classification number: H01L21/02565 ,  H01L29/22 ,  H01L41/113 ,  H01L41/31 ,  H01L41/313

Abstract: Provided is a method of fabricating an oxide thin film device using laser lift-off and an oxide thin film device fabricated by the same. The method includes: forming an oxide thin film on a growth substrate; bonding a temporary substrate on the oxide thin film; irradiating laser onto the growth substrate to separate the oxide thin film on which the temporary substrate has been bonded from the growth substrate; bonding a device substrate on the oxide thin film on which the temporary substrate has been bonded; and forming an upper electrode film on the oxide thin film. Therefore, it is possible to overcome problems caused by a defective layer by transferring an oxide thin film transferred on a polymer-based temporary substrate onto a device substrate, without using an interface on which a defective layer formed due to oxygen diffusion upon laser lift-off is formed.

Abstract translation: 提供一种使用激光剥离制造氧化物薄膜器件的方法和由其制造的氧化物薄膜器件。 该方法包括：在生长衬底上形成氧化物薄膜; 将临时衬底粘结在氧化物薄膜上; 将激光照射到所述生长衬底上以从所述生长衬底分离其上已经结合有所述临时衬底的氧化物薄膜; 将器件衬底接合在已经结合有临时衬底的氧化物薄膜上; 以及在所述氧化物薄膜上形成上电极膜。 因此，可以通过将在基于聚合物的临时衬底上转印的氧化物薄膜转印到器件衬底上来克服由缺陷层引起的问题，而不使用在激光提升时由于氧扩散而形成的缺陷层的界面， 关闭形成。