公开(公告)号：US08890142B2

公开(公告)日：2014-11-18

申请号：US13774722

申请日：2013-02-22

Applicant: Korea Institute of Science and Technology

Inventor： Seung Hyub Baek ,  Shin Ik Kim ,  Jin Sang Kim ,  Ji Won Choi ,  Seok Jin Yoon ,  Chong Yun Kang

IPC: H01L29/12 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/778 ,  H01L29/24 ,  H01L29/408 ,  H01L29/516 ,  H01L29/66969 ,  H01L29/7786

Abstract: Provided is an oxide electronic device, including: an oxide substrate; an oxide thin film layer formed on the oxide substrate and containing an oxide that is heterogeneous with respect to the oxide substrate; and a ferroelectric layer formed on the oxide thin film layer and controlling electric conductivity of two-dimensional electron gas (2DEG) generated at an interface between the oxide substrate and the oxide thin film layer. Provided also is a method for manufacturing an oxide electronic device, including: depositing, on an oxide substrate, an oxide that is heterogeneous with respect to the oxide substrate to form an oxide thin film layer; and forming a ferroelectric layer on the oxide thin film layer, wherein the ferroelectric layer controls electric conductivity of 2DEG generated at an interface between the oxide substrate and the oxide thin film layer.

Abstract translation: 提供一种氧化物电子器件，包括：氧化物衬底; 氧化物薄膜层，其形成在所述氧化物基板上并且含有相对于所述氧化物基板为异质的氧化物; 以及形成在所述氧化物薄膜层上并且控制在所述氧化物衬底和所述氧化物薄膜层之间的界面处产生的二维电子气（2DEG）的导电性的铁电层。 还提供了一种氧化物电子器件的制造方法，包括：在氧化物衬底上沉积相对于氧化物衬底是异质的氧化物以形成氧化物薄膜层; 以及在所述氧化物薄膜层上形成铁电体层，其中所述铁电体层控制在所述氧化物基板和所述氧化物薄膜层之间的界面处产生的2DEG的导电性。

公开(公告)号：US20130334522A1

公开(公告)日：2013-12-19

申请号：US13713396

申请日：2012-12-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Chong Yun Kang ,  Seok Jin Yoon ,  Young Ho Do ,  Ji Won Choi ,  Seung Hyub Baek ,  Hyun Cheol Song ,  Jin Sang Kim

IPC: H01L21/02 ,  H01L29/22

CPC classification number: H01L21/02565 ,  H01L29/22 ,  H01L41/113 ,  H01L41/31 ,  H01L41/313

Abstract: Provided is a method of fabricating an oxide thin film device using laser lift-off and an oxide thin film device fabricated by the same. The method includes: forming an oxide thin film on a growth substrate; bonding a temporary substrate on the oxide thin film; irradiating laser onto the growth substrate to separate the oxide thin film on which the temporary substrate has been bonded from the growth substrate; bonding a device substrate on the oxide thin film on which the temporary substrate has been bonded; and forming an upper electrode film on the oxide thin film. Therefore, it is possible to overcome problems caused by a defective layer by transferring an oxide thin film transferred on a polymer-based temporary substrate onto a device substrate, without using an interface on which a defective layer formed due to oxygen diffusion upon laser lift-off is formed.

Abstract translation: 提供一种使用激光剥离制造氧化物薄膜器件的方法和由其制造的氧化物薄膜器件。 该方法包括：在生长衬底上形成氧化物薄膜; 将临时衬底粘结在氧化物薄膜上; 将激光照射到所述生长衬底上以从所述生长衬底分离其上已经结合有所述临时衬底的氧化物薄膜; 将器件衬底接合在已经结合有临时衬底的氧化物薄膜上; 以及在所述氧化物薄膜上形成上电极膜。 因此，可以通过将在基于聚合物的临时衬底上转移的氧化物薄膜转印到器件衬底上来克服由缺陷层引起的问题，而不使用在激光提升时由于氧扩散而形成的缺陷层的界面， 关闭形成。

公开(公告)号：US10217928B2

公开(公告)日：2019-02-26

申请号：US15158158

申请日：2016-05-18

Applicant: Korea Institute of Science and Technology

Inventor： Chong Yun Kang ,  Seok Jin Yoon ,  Jin Sang Kim ,  Ji-Won Choi ,  Seung Hyub Baek ,  Seong Keun Kim ,  Woo-Suk Jung ,  Beomjin Kwon

IPC: H01L41/02 ,  H01L41/113

Abstract: Disclosed is a curved piezoelectric device maximizing an electrical potential of the piezoelectric material corresponding to an external mechanical stress. The curved piezoelectric device includes: a curved substrate; and a piezoelectric material provided on one surface or both surfaces of the curved substrate, wherein when a stress is applied, a neutral plane in which a compressive stress and a tensile stress are balanced is located in the curved substrate, wherein the location of the neutral plane is determined by y1 and y2 of Equation 1 or 2 below, and wherein the location of the neutral plane is controllable by adjusting a thickness (d), a sectional area (A) and a Young's modulus (E) of each of the curved substrate and the piezoelectric material: wherein y 1 = E 2 ⁢ d 2 ⁡ ( d 1 + d 2 ) 2 ⁢ ( E 1 ⁢ d 1 + E 2 ⁢ d 2 ) , y 2 = E 1 ⁢ d 1 ⁡ ( d 1 + d 2 ) 2 ⁢ ( E 1 ⁢ d 1 + E 2 ⁢ d 2 ) ⁢ ⁢ and Equation ⁢ ⁢ 1 y 1 = E 2 ⁢ A 2 ⁡ ( A 1 + A 2 ) 2 ⁢ ( E 1 ⁢ A 1 + E 2 ⁢ A 2 ) , y 2 = E 1 ⁢ A 1 ⁡ ( A 1 + A 2 ) 2 ⁢ ( E 1 ⁢ A 1 + E 2 ⁢ A 2 ) . Equation ⁢ ⁢ 2

公开(公告)号：US09285332B2

公开(公告)日：2016-03-15

申请号：US14250821

申请日：2014-04-11

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ho Won Jang ,  Seok Jin Yoon ,  Jin Sang Kim ,  Chong Yun Kang ,  Ji Won Choi ,  Hi Gyu Moon

IPC: H01L29/49 ,  G01N27/12 ,  B82Y15/00 ,  B82Y40/00

CPC classification number: G01N27/127 ,  B82Y15/00 ,  B82Y40/00

Abstract: The present disclosure provides a gas sensor including: a substrate; an electrode formed on the substrate; and a gas-sensing layer formed on the electrode, wherein the gas-sensing layer is a self-heating nanocolumnar structure having nanocolumns formed on the electrode and inclined with respect to the electrode with an angle of 60-89° and gas diffusion pores formed between the nanocolumns. The gas sensor according to the present disclosure requires no additional heater since it self-heats owing to the nanocolumnar structure and exhibits superior gas sensitivity even when no heat is applied from outside. Also, it can be mounted on mobile devices such as mobile phones because it consumes less power.

Abstract translation: 本公开提供了一种气体传感器，包括：基板; 形成在基板上的电极; 以及形成在所述电极上的气体感测层，其中所述气体感测层是具有在所述电极上形成的纳米柱并且以60-89°的角度相对于所述电极倾斜并且形成气体扩散孔的自加热纳米柱结构 在纳米柱之间。 根据本公开的气体传感器不需要额外的加热器，因为其由于纳米柱状结构而自发加热，并且即使在从外部没有加热时也显示出优异的气体灵敏度。 此外，它可以安装在诸如移动电话的移动设备上，因为它消耗更少的功率。

公开(公告)号：US09118000B2

公开(公告)日：2015-08-25

申请号：US13663781

申请日：2012-10-30

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Chong Yun Kang ,  Seok Jin Yoon ,  Young Ho Do ,  Ji Won Choi ,  Hyun Cheol Song ,  Seung Hyub Baek ,  Jin Sang Kim

IPC: H01L41/22 ,  H04R17/00 ,  H01L41/113 ,  H01L41/18 ,  H01L41/312 ,  H01L41/317

CPC classification number: H01L41/113 ,  H01L41/183 ,  H01L41/312 ,  H01L41/317 ,  H01L41/37 ,  Y10T29/42

Abstract: Provided are a method of manufacturing a flexible piezoelectric energy harvesting device using a piezoelectric composite, and a flexible piezoelectric energy harvesting device manufactured by the same. The method of manufacturing the flexible piezoelectric energy harvesting device includes: forming a first electrode layer on a first flexible substrate; spin-coating a piezoelectric composite layer on the first electrode layer, wherein the piezoelectric composite layer is produced by mixing piezoelectric powder with polymer; performing heat treatment on the piezoelectric composite layer to harden the piezoelectric composite layer; and bonding a second flexible substrate with a second electrode layer on the hardened piezoelectric composite layer. Therefore, it is possible to simplify a manufacturing process and manufacture a high-performance flexible piezoelectric energy harvesting device having various sizes and patterns.

Abstract translation: 提供一种制造使用压电复合材料的柔性压电能量收集装置的方法和由其制造的柔性压电能量收集装置。 柔性压电能量收集装置的制造方法包括：在第一柔性基板上形成第一电极层; 在第一电极层上旋涂压电复合层，其中压电复合层通过将压电粉末与聚合物混合而制成; 对压电复合层进行热处理，使压电复合层硬化; 以及在所述硬化的压电复合层上将第二柔性基板与第二电极层接合。 因此，可以简化制造工艺并制造具有各种尺寸和图案的高性能柔性压电能量收集装置。

公开(公告)号：US08828845B2

公开(公告)日：2014-09-09

申请号：US13713396

申请日：2012-12-13

Applicant: Korea Institute of Science and Technology

Inventor： Chong Yun Kang ,  Seok Jin Yoon ,  Young Ho Do ,  Ji Won Choi ,  Seung Hyub Baek ,  Hyun Cheol Song ,  Jin Sang Kim

IPC: H01L21/30 ,  H01L21/02 ,  H01L29/22 ,  H01L41/31

CPC classification number: H01L21/02565 ,  H01L29/22 ,  H01L41/113 ,  H01L41/31 ,  H01L41/313

Abstract: Provided is a method of fabricating an oxide thin film device using laser lift-off and an oxide thin film device fabricated by the same. The method includes: forming an oxide thin film on a growth substrate; bonding a temporary substrate on the oxide thin film; irradiating laser onto the growth substrate to separate the oxide thin film on which the temporary substrate has been bonded from the growth substrate; bonding a device substrate on the oxide thin film on which the temporary substrate has been bonded; and forming an upper electrode film on the oxide thin film. Therefore, it is possible to overcome problems caused by a defective layer by transferring an oxide thin film transferred on a polymer-based temporary substrate onto a device substrate, without using an interface on which a defective layer formed due to oxygen diffusion upon laser lift-off is formed.

Abstract translation: 提供一种使用激光剥离制造氧化物薄膜器件的方法和由其制造的氧化物薄膜器件。 该方法包括：在生长衬底上形成氧化物薄膜; 将临时衬底粘结在氧化物薄膜上; 将激光照射到所述生长衬底上以从所述生长衬底分离其上已经结合有所述临时衬底的氧化物薄膜; 将器件衬底接合在已经结合有临时衬底的氧化物薄膜上; 以及在所述氧化物薄膜上形成上电极膜。 因此，可以通过将在基于聚合物的临时衬底上转印的氧化物薄膜转印到器件衬底上来克服由缺陷层引起的问题，而不使用在激光提升时由于氧扩散而形成的缺陷层的界面， 关闭形成。