公开(公告)号：US11705549B2

公开(公告)日：2023-07-18

申请号：US16952087

申请日：2020-11-19

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won Choi ,  Jin Sang Kim ,  Chong Yun Kang ,  Seung Hyub Baek ,  Seong Keun Kim ,  Hyun-Cheol Song ,  Sang Tae Kim ,  Hyun Seok Lee

IPC: H01M4/04 ,  H01M10/052 ,  H01M4/58 ,  H01M4/02

CPC classification number: H01M4/0404 ,  H01M4/58 ,  H01M10/052 ,  H01M2004/021 ,  H01M2004/027

Abstract: Disclosed is a transparent anode thin film comprising a transparent anode active material layer, wherein the transparent anode active material layer comprises a Si-based anode active material having a composition represented by the following [Chemical Formula 1]:

SiNx  [Chemical Formula 1]



(wherein 0

公开(公告)号：US08890142B2

公开(公告)日：2014-11-18

申请号：US13774722

申请日：2013-02-22

Applicant: Korea Institute of Science and Technology

Inventor： Seung Hyub Baek ,  Shin Ik Kim ,  Jin Sang Kim ,  Ji Won Choi ,  Seok Jin Yoon ,  Chong Yun Kang

IPC: H01L29/12 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/778 ,  H01L29/24 ,  H01L29/408 ,  H01L29/516 ,  H01L29/66969 ,  H01L29/7786

Abstract: Provided is an oxide electronic device, including: an oxide substrate; an oxide thin film layer formed on the oxide substrate and containing an oxide that is heterogeneous with respect to the oxide substrate; and a ferroelectric layer formed on the oxide thin film layer and controlling electric conductivity of two-dimensional electron gas (2DEG) generated at an interface between the oxide substrate and the oxide thin film layer. Provided also is a method for manufacturing an oxide electronic device, including: depositing, on an oxide substrate, an oxide that is heterogeneous with respect to the oxide substrate to form an oxide thin film layer; and forming a ferroelectric layer on the oxide thin film layer, wherein the ferroelectric layer controls electric conductivity of 2DEG generated at an interface between the oxide substrate and the oxide thin film layer.

Abstract translation: 提供一种氧化物电子器件，包括：氧化物衬底; 氧化物薄膜层，其形成在所述氧化物基板上并且含有相对于所述氧化物基板为异质的氧化物; 以及形成在所述氧化物薄膜层上并且控制在所述氧化物衬底和所述氧化物薄膜层之间的界面处产生的二维电子气（2DEG）的导电性的铁电层。 还提供了一种氧化物电子器件的制造方法，包括：在氧化物衬底上沉积相对于氧化物衬底是异质的氧化物以形成氧化物薄膜层; 以及在所述氧化物薄膜层上形成铁电体层，其中所述铁电体层控制在所述氧化物基板和所述氧化物薄膜层之间的界面处产生的2DEG的导电性。

公开(公告)号：US20130334522A1

公开(公告)日：2013-12-19

申请号：US13713396

申请日：2012-12-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Chong Yun Kang ,  Seok Jin Yoon ,  Young Ho Do ,  Ji Won Choi ,  Seung Hyub Baek ,  Hyun Cheol Song ,  Jin Sang Kim

IPC: H01L21/02 ,  H01L29/22

CPC classification number: H01L21/02565 ,  H01L29/22 ,  H01L41/113 ,  H01L41/31 ,  H01L41/313

Abstract: Provided is a method of fabricating an oxide thin film device using laser lift-off and an oxide thin film device fabricated by the same. The method includes: forming an oxide thin film on a growth substrate; bonding a temporary substrate on the oxide thin film; irradiating laser onto the growth substrate to separate the oxide thin film on which the temporary substrate has been bonded from the growth substrate; bonding a device substrate on the oxide thin film on which the temporary substrate has been bonded; and forming an upper electrode film on the oxide thin film. Therefore, it is possible to overcome problems caused by a defective layer by transferring an oxide thin film transferred on a polymer-based temporary substrate onto a device substrate, without using an interface on which a defective layer formed due to oxygen diffusion upon laser lift-off is formed.

Abstract translation: 提供一种使用激光剥离制造氧化物薄膜器件的方法和由其制造的氧化物薄膜器件。 该方法包括：在生长衬底上形成氧化物薄膜; 将临时衬底粘结在氧化物薄膜上; 将激光照射到所述生长衬底上以从所述生长衬底分离其上已经结合有所述临时衬底的氧化物薄膜; 将器件衬底接合在已经结合有临时衬底的氧化物薄膜上; 以及在所述氧化物薄膜上形成上电极膜。 因此，可以通过将在基于聚合物的临时衬底上转移的氧化物薄膜转印到器件衬底上来克服由缺陷层引起的问题，而不使用在激光提升时由于氧扩散而形成的缺陷层的界面， 关闭形成。

公开(公告)号：US11417516B2

公开(公告)日：2022-08-16

申请号：US16225432

申请日：2018-12-19

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  INSTITUTE FOR BASIC SCIENCE ,  ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seong Keun Kim ,  Woo Chui Lee ,  Sang Tae Kim ,  Hyun Cheol Song ,  Seung Hyub Baek ,  Ji Won Choi ,  Jin Sang Kim ,  Chong Yun Kang ,  Christopher W. Bielawski ,  Jung Hwan Yum ,  Eric S. Larsen

IPC: C01F3/02 ,  H01L21/02 ,  H01L27/108 ,  H01L49/02

Abstract: Provided is a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is made of a compound having a chemical formula of BexM1-xO, where M includes one of alkaline earth metals and x has a value greater than 0 and not greater than 0.19. A semiconductor memory device also is provided that includes a capacitor composed of a lower electrode; a dielectric layer disposed on the lower electrode; and an upper electrode disposed on the dielectric layer, wherein the dielectric layer has a rocksalt structure in a room temperature stable phase and is made of a compound having a chemical formula shown below, BexM1-xO, where M comprises an alkaline earth metal and x has a value greater than 0 and not greater than 0.19.

公开(公告)号：US10685762B2

公开(公告)日：2020-06-16

申请号：US15990824

申请日：2018-05-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won Choi ,  Jin Sang Kim ,  Chong Yun Kang ,  Seong Keun Kim ,  Seung Hyub Baek ,  Sang Tae Kim ,  Won Jae Lee ,  Narendra Singh Parmar ,  Young-Shin Lee

IPC: H01B1/22 ,  H01L29/20 ,  H01L21/288 ,  H01L21/285 ,  H01L29/45 ,  C08L29/04 ,  C08K3/22

Abstract: The present disclosure relates to a paste for ohmic contact to p-type semiconductor, including a metal oxide and a binder, wherein the metal oxide is a rhenium oxide or a molybdenum oxide.

公开(公告)号：US11733543B2

公开(公告)日：2023-08-22

申请号：US16044510

申请日：2018-07-25

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won Choi ,  Yong-Won Song ,  Hyunjung Yi ,  Jin Sang Kim ,  Chong Yun Kang ,  Seong Keun Kim ,  Seung Hyub Baek ,  Sang Tae Kim ,  Hyun Seok Lee

IPC: G02C7/04 ,  H01M4/64 ,  H01M10/0562 ,  H01M4/04 ,  H01M10/058 ,  H01M10/04 ,  G02C11/00 ,  H02J50/10 ,  H01M6/40

CPC classification number: G02C7/04 ,  G02C11/10 ,  H01M4/0426 ,  H01M4/64 ,  H01M10/0436 ,  H01M10/058 ,  H01M10/0562 ,  H01M6/40 ,  H01M2220/30 ,  H01M2300/0068 ,  H02J50/10

Abstract: Disclosed herein is a smart wearable lens mounted with an all-solid-state thin film secondary battery including a flexible substrate, a cathode current collector, a cathode, a solid electrolyte, an anode, and an anode current collector. The smart wearable lens mounted with the all-solid-state thin film secondary battery may be stably and continuously supplied with power and has a low self-discharge rate. In addition, the smart wearable lens may minimize aversion when humans are wearing the smart wearable lens and be suitably used for a curved lens, especially a micro-lens such as a contact lens.

公开(公告)号：US11245345B2

公开(公告)日：2022-02-08

申请号：US16296218

申请日：2019-03-08

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun-Cheol Song ,  Chong Yun Kang ,  Jin Sang Kim ,  Ji-won Choi ,  Seung Hyub Baek ,  Seong Keun Kim ,  Sang Tae Kim ,  Youn-hwan Shin

IPC: H02N2/18 ,  H01L41/04 ,  H01L41/113 ,  H01L41/053

Abstract: Provided is a self-resonance tuning piezoelectric energy harvester. The self-resonance tuning piezoelectric energy harvester includes a piezoelectric beam which extends along a horizontal direction, a fixing element which fixes two ends of the piezoelectric beam, and a mass which is connected to the piezoelectric beam movably along the piezoelectric beam, wherein the mass includes a through-hole through which the piezoelectric beam passes, and makes the movement through the through-hole. According to the principle of continuous movement to the resonance position, the mass of the self-resonance tuning piezoelectric energy harvester induces the piezoelectric beam to generate displacement to the maximum and maximize the electricity production capacity of the piezoelectric energy harvester.

公开(公告)号：US11837977B2

公开(公告)日：2023-12-05

申请号：US16953859

申请日：2020-11-20

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun-Cheol Song ,  Chong Yun Kang ,  Jin Sang Kim ,  Ji-Won Choi ,  Seung Hyub Baek ,  Seong Keun Kim

IPC: H02N2/18 ,  H10N30/30 ,  H10N30/857

CPC classification number: H02N2/188 ,  H10N30/304 ,  H10N30/857

Abstract: Proposed is a self-resonance tuning piezoelectric energy harvester with broadband frequency, including: a piezoelectric beam which is extended along a horizontal direction; a fixing member which fixes opposite ends of the piezoelectric beam; and a mobile mass which the piezoelectric beam passes through, and which is capable of self-movement along the piezoelectric beam through a through-hole which has a free space in addition to a space which the piezoelectric beam passes through, wherein as the mobile mass moves to a position of the piezoelectric beam, generated displacement of a piezoelectric beam is increased, and as the generated displacement becomes greater than the free space, the mobile mass is fixed to a position of a piezoelectric beam at which resonance will occur.

公开(公告)号：US10217928B2

公开(公告)日：2019-02-26

申请号：US15158158

申请日：2016-05-18

Applicant: Korea Institute of Science and Technology

Inventor： Chong Yun Kang ,  Seok Jin Yoon ,  Jin Sang Kim ,  Ji-Won Choi ,  Seung Hyub Baek ,  Seong Keun Kim ,  Woo-Suk Jung ,  Beomjin Kwon

IPC: H01L41/02 ,  H01L41/113

Abstract: Disclosed is a curved piezoelectric device maximizing an electrical potential of the piezoelectric material corresponding to an external mechanical stress. The curved piezoelectric device includes: a curved substrate; and a piezoelectric material provided on one surface or both surfaces of the curved substrate, wherein when a stress is applied, a neutral plane in which a compressive stress and a tensile stress are balanced is located in the curved substrate, wherein the location of the neutral plane is determined by y1 and y2 of Equation 1 or 2 below, and wherein the location of the neutral plane is controllable by adjusting a thickness (d), a sectional area (A) and a Young's modulus (E) of each of the curved substrate and the piezoelectric material: wherein y 1 = E 2 ⁢ d 2 ⁡ ( d 1 + d 2 ) 2 ⁢ ( E 1 ⁢ d 1 + E 2 ⁢ d 2 ) , y 2 = E 1 ⁢ d 1 ⁡ ( d 1 + d 2 ) 2 ⁢ ( E 1 ⁢ d 1 + E 2 ⁢ d 2 ) ⁢ ⁢ and Equation ⁢ ⁢ 1 y 1 = E 2 ⁢ A 2 ⁡ ( A 1 + A 2 ) 2 ⁢ ( E 1 ⁢ A 1 + E 2 ⁢ A 2 ) , y 2 = E 1 ⁢ A 1 ⁡ ( A 1 + A 2 ) 2 ⁢ ( E 1 ⁢ A 1 + E 2 ⁢ A 2 ) . Equation ⁢ ⁢ 2

公开(公告)号：US09704610B2

公开(公告)日：2017-07-11

申请号：US15014937

申请日：2016-02-03

Applicant: Korea Institute of Science and Technology

Inventor： Ji-Won Choi ,  Won-Kook Choi ,  Jin Sang Kim ,  Haena Yim

IPC: B32B15/04 ,  C23C14/06 ,  H01B1/02 ,  H01L29/43 ,  H01L31/0224 ,  C01G19/02 ,  H01L31/18 ,  H01L33/42

CPC classification number: H01B1/02 ,  C01G19/02 ,  C01P2002/50 ,  C01P2002/54 ,  H01L29/43 ,  H01L31/022466 ,  H01L31/1884 ,  H01L33/42 ,  Y02E10/50

Abstract: Disclosed is a manganese tin oxide-based transparent conducting oxide (TCO) with an optimized composition, which has low surface roughness, low sheet resistance and high transmittance even when deposited at room temperature, a multilayer transparent conductive film using the same and a method for fabricating the same. The manganese tin oxide-based transparent conducting oxide has a composition of MnxSn1-xO (0