公开(公告)号：US20040041217A1

公开(公告)日：2004-03-04

申请号：US10342004

申请日：2003-01-14

Applicant: Korea Institute of Science and Technology

Inventor： Woo Young Lee ,  Suk Hee Han ,  Joon Yeon Chang ,  Hi Jung Kim ,  Jung Mi Lee ,  Jae Min Myoung

IPC: H01L027/14 ,  H01L029/82 ,  H01L029/84

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F1/404 ,  H01F10/193 ,  H01F10/3213 ,  H01F41/30 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/66984 ,  H01L33/40 ,  H01L43/08 ,  H01L43/10

Abstract: A 3 group-5 group compound ferromagnetic semiconductor, comprising one material nullAnull selected from the group of Ga, Al and In and one material nullBnull selected from the group consisting of N and P, wherein one material nullCnull selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material nullAnull, the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.

Abstract translation: 包含选自Ga，Al和In的一种材料“A”和选自N和P的一种材料“B”的3组5族化合物铁磁半导体，其中一种选自 掺杂有Mn，Mg，Co，Fe，Ni，Cr和V的组合作为材料“A”的材料被掺杂，化合物半导体整体上具有单相。 铁磁半导体可以通过等离子体增强分子束外延生长方法制造，并且由于其显示室温下的铁磁特性，因此可以用作各种自旋电子器件。