公开(公告)号：US20040179309A1

公开(公告)日：2004-09-16

申请号：US10798447

申请日：2004-03-12

Applicant: Korea Institute of Science and Technology

Inventor： Woo Young Lee ,  Kyung Ho Shin ,  Suk Hee Han ,  Joon Yeon Chang ,  Hi Jung Kim ,  Dal Young Kim ,  Kwan Hyi Lee ,  Kyoung Il Lee ,  Min Hong Jeun

IPC: C25D005/00 ,  G11B005/127 ,  H01L031/062

CPC classification number: H01F10/1936 ,  C25D3/54 ,  C25D5/50 ,  G11C11/14 ,  H01F1/401 ,  H01F41/18 ,  H01F41/26 ,  H01L43/12

Abstract: In a method for fabricating a Bi thin film having a great MR (magnetoresistance) at room temperature and a method for fabricating a spintronics device using the same, the Bi thin film is fabricated by an electrodepostiting method and a sputtering method and has very great MR characteristics at room temperature, and it can be applied to various spintronics devices.

Abstract translation: 在室温下具有大的MR（磁阻）的Bi薄膜的制造方法以及使用该Bi薄膜的自旋电子学装置的制造方法中，Bi薄膜通过电沉积法和溅射法制造，具有非常大的MR 在室温下的特性，并且可以应用于各种自旋电子器件。

公开(公告)号：US20040178460A1

公开(公告)日：2004-09-16

申请号：US10801744

申请日：2004-03-15

Applicant: Korea Institute of Science and Technology

Inventor： Woo Young Lee ,  Suk Hee Han ,  Joon Yeon Chang ,  Hi Jung Kim ,  Han Joo Lee ,  Woong Jun Hwang ,  Moo Whan Shin ,  Young Keun Kim

IPC: H01L029/82

CPC classification number: H01F10/1936 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/193 ,  H01F41/308 ,  H01L29/66984

Abstract: Disclosed are a spin injection device applicable as a memory and a logical device using a spin valve effect obtained by injecting a carrier spin-polarized from a ferromagnet into a semiconductor at an ordinary temperature, and a spin-polarized field effect transistor.

Abstract translation: 公开了适用于作为存储器的自旋注入装置和使用通过将从铁磁体自旋极化的载流子注入到常温下的半导体中而获得的自旋阀效应的自旋注入装置和自旋极化场效应晶体管。

公开(公告)号：US20040041217A1

公开(公告)日：2004-03-04

申请号：US10342004

申请日：2003-01-14

Applicant: Korea Institute of Science and Technology

Inventor： Woo Young Lee ,  Suk Hee Han ,  Joon Yeon Chang ,  Hi Jung Kim ,  Jung Mi Lee ,  Jae Min Myoung

IPC: H01L027/14 ,  H01L029/82 ,  H01L029/84

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F1/404 ,  H01F10/193 ,  H01F10/3213 ,  H01F41/30 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/66984 ,  H01L33/40 ,  H01L43/08 ,  H01L43/10

Abstract: A 3 group-5 group compound ferromagnetic semiconductor, comprising one material nullAnull selected from the group of Ga, Al and In and one material nullBnull selected from the group consisting of N and P, wherein one material nullCnull selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material nullAnull, the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.

Abstract translation: 包含选自Ga，Al和In的一种材料“A”和选自N和P的一种材料“B”的3组5族化合物铁磁半导体，其中一种选自 掺杂有Mn，Mg，Co，Fe，Ni，Cr和V的组合作为材料“A”的材料被掺杂，化合物半导体整体上具有单相。 铁磁半导体可以通过等离子体增强分子束外延生长方法制造，并且由于其显示室温下的铁磁特性，因此可以用作各种自旋电子器件。