公开(公告)号：US20220165943A1

公开(公告)日：2022-05-26

申请号：US17488609

申请日：2021-09-29

Applicant: Korea University Research and Business Foundation

Inventor： Young Keun KIM ,  Taehyun KIM

IPC: H01L43/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/04 ,  G11C11/16 ,  H01L27/22 ,  H01F10/32

Abstract: Disclosed are a spin-orbit torque (SOT)-based magnetic tunnel junction and a method of fabricating the same. More particularly, the SOT-based magnetic tunnel junction includes a spin-orbit torque (SOT)-based magnetic tunnel junction, including: a spin-orbit active layer formed on the substrate; a free layer formed on the spin-orbit active layer; a tunnel barrier layer formed on the free layer; and a pinned layer formed on the tunnel barrier layer, wherein the spin-orbit active layer includes a W—X alloy (where W is tungsten and X includes at least one of group IV semiconductors and group III-V semiconductors).