公开(公告)号：US08083852B2

公开(公告)日：2011-12-27

申请号：US12922917

申请日：2009-03-24

申请人： Kosei Sugawara ,  Ryoji Hoshi ,  Masanori Takazawa ,  Yuuichi Miyahara ,  Atsushi Iwasaki

发明人： Kosei Sugawara ,  Ryoji Hoshi ,  Masanori Takazawa ,  Yuuichi Miyahara ,  Atsushi Iwasaki

IPC分类号： C30B15/06

CPC分类号： C30B15/20 ,  C30B15/10 ,  C30B29/06 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof.

摘要翻译： 一种从基于Czochralski方法在石英坩埚中熔化的硅原料的熔体中提取和生长单晶的硅单晶生长方法，该方法包括以下步骤：施加直流电压，使得 石英坩埚的外壁作为正极，并且浸入硅原料的熔体中的电极用作负极，浸没电极与用于拉出单晶的拉拔构件分开放置; 以及在使电流通过电极的同时用牵引构件生长单晶及其牵引装置。

公开(公告)号：US20110017125A1

公开(公告)日：2011-01-27

申请号：US12922917

申请日：2009-03-24

申请人： Kosei Sugawara ,  Ryoji Hoshi ,  Masanori Takazawa ,  Yuuichi Miyahara ,  Atsushi Iwasaki

发明人： Kosei Sugawara ,  Ryoji Hoshi ,  Masanori Takazawa ,  Yuuichi Miyahara ,  Atsushi Iwasaki

IPC分类号： C30B15/14 ,  C30B15/10

CPC分类号： C30B15/20 ,  C30B15/10 ,  C30B29/06 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof.

摘要翻译： 一种从基于Czochralski方法在石英坩埚中熔化的硅原料的熔体中提取和生长单晶的硅单晶生长方法，该方法包括以下步骤：施加直流电压，使得 石英坩埚的外壁作为正极，并且浸入硅原料的熔体中的电极用作负极，浸没电极与用于拉出单晶的拉拔构件分开放置; 以及在使电流通过电极的同时用牵引构件生长单晶及其牵引装置。

公开(公告)号：US09234296B2

公开(公告)日：2016-01-12

申请号：US13813551

申请日：2011-07-06

申请人： Shou Takashima ,  Yuuichi Miyahara ,  Atsushi Iwasaki ,  Nobuaki Mitamura ,  Susumu Sonokawa

发明人： Shou Takashima ,  Yuuichi Miyahara ,  Atsushi Iwasaki ,  Nobuaki Mitamura ,  Susumu Sonokawa

IPC分类号： C30B15/14 ,  C30B29/06 ,  C30B15/30

CPC分类号： C30B15/14 ,  C30B15/30 ,  C30B29/06 ,  Y10T117/1068

摘要： The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part.

摘要翻译： 本发明是一种半导体单晶制造装置，其包括在生长炉主体内的坩埚和设置在坩埚周围的加热器，其中，绝热筒设置在生长炉主体内的加热器周围，绝热 气缸包括将绝热筒分成其内表面的上部和下部的台阶部分，下部的内径大于上部的内径，隔热板设置在 加热器，并且在生长炉主体内的隔热筒的下部的内侧，绝热板的直径大于绝热筒的上部的内径，并且小于内部 下部直径。

公开(公告)号：US20130125810A1

公开(公告)日：2013-05-23

申请号：US13813551

申请日：2011-07-06

申请人： Shou Takashima ,  Yuuichi Miyahara ,  Atsushi Iwasaki ,  Nobuaki Mitamura ,  Susumu Sonokawa

发明人： Shou Takashima ,  Yuuichi Miyahara ,  Atsushi Iwasaki ,  Nobuaki Mitamura ,  Susumu Sonokawa

IPC分类号： C30B15/14 ,  C30B15/30

CPC分类号： C30B15/14 ,  C30B15/30 ,  C30B29/06 ,  Y10T117/1068

摘要： The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part.

摘要翻译： 本发明是一种半导体单晶制造装置，其包括在生长炉主体内的坩埚和设置在坩埚周围的加热器，其中，绝热筒设置在生长炉主体内的加热器周围，绝热 气缸包括将绝热筒分成其内表面的上部和下部的台阶部分，下部的内径大于上部的内径，隔热板设置在 加热器，并且在生长炉主体内的隔热筒的下部的内侧，绝热板的直径大于绝热筒的上部的内径，并且小于内部 下部直径。

公开(公告)号：US08343275B2

公开(公告)日：2013-01-01

申请号：US12449878

申请日：2008-02-28

申请人： Yuuichi Miyahara ,  Atsushi Iwasaki ,  Tetsuhiro Oda

发明人： Yuuichi Miyahara ,  Atsushi Iwasaki ,  Tetsuhiro Oda

IPC分类号： C30B15/22

CPC分类号： C30B29/06 ,  C30B15/10 ,  C30B15/20 ,  Y10T117/1024 ,  Y10T117/1032

摘要： The present invention resides in a silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material in a quartz crucible based on a Czochralski method, wherein the method comprises the steps of: applying a DC voltage between an outer wall of the quartz crucible acts as a positive electrode and a pulling wire or pulling shaft for pulling up the silicon single crystal acts as a negative electrode; and fixing an electric current flowing through the silicon single crystal over a period of time for pulling up the single crystal, to grow the single crystal; as well as a pulling apparatus therefor.

摘要翻译： 本发明在于一种基于Czochralski方法从石英坩埚中的硅原料的熔体中提取和生长单晶的硅单晶生长方法，其中该方法包括以下步骤： 石英坩埚的外壁用作正极，用于拉起单晶硅的牵引线或牵引轴用作负极; 并且在一段时间内固定流过硅单晶的电流，以拉高单晶，生长单晶; 以及其牵引装置。

公开(公告)号：US20100126408A1

公开(公告)日：2010-05-27

申请号：US12449878

申请日：2008-02-28

申请人： Yuuichi Miyahara ,  Atsushi Iwasaki ,  Tetsuhiro Oda

发明人： Yuuichi Miyahara ,  Atsushi Iwasaki ,  Tetsuhiro Oda

IPC分类号： C30B15/00

CPC分类号： C30B29/06 ,  C30B15/10 ,  C30B15/20 ,  Y10T117/1024 ,  Y10T117/1032

摘要： The present invention resides in a silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material in a quartz crucible based on a Czochralski method, wherein the method comprises the steps of: applying a DC voltage between an outer wall of the quartz crucible acts as a positive electrode and a pulling wire or pulling shaft for pulling up the silicon single crystal acts as a negative electrode; and fixing an electric current flowing through the silicon single crystal over a period of time for pulling up the single crystal, to grow the single crystal; as well as a pulling apparatus therefor. This allows for provision of the silicon single crystal growth method and the pulling apparatus therefor, capable of generating appropriately crystallized layers, i.e., devitrification at an inner wall surface of a quartz crucible during a silicon single crystal growth process, and capable of simultaneously controlling a Li concentration of the silicon single crystal, to prevent generating dislocations in the single crystal growth process to thereby improve a yield and productivity of single crystal, while simultaneously restricting variances of thicknesses of those oxide films of sliced wafers which oxide films are to be formed by subsequent thermal oxidation treatments.

摘要翻译： 本发明在于一种基于Czochralski方法从石英坩埚中的硅原料的熔体中提取和生长单晶的硅单晶生长方法，其中该方法包括以下步骤： 石英坩埚的外壁用作正极，用于拉起单晶硅的牵引线或牵引轴用作负极; 并且在一段时间内固定流过硅单晶的电流，以拉高单晶，生长单晶; 以及其牵引装置。 这允许提供硅单晶生长方法及其拉制装置，其能够产生适当结晶的层，即在硅单晶生长过程中在石英坩埚的内壁表面处失透，并且能够同时控制 锂单晶的Li浓度，以防止在单晶生长过程中产生位错，从而提高单晶的产率和生产率，同时限制切片晶片的那些氧化物膜的厚度的变化，这些氧化物膜将由 随后的热氧化处理。

公开(公告)号：US08717333B2

公开(公告)日：2014-05-06

申请号：US13044665

申请日：2011-03-10

申请人： Masao Ozeki ,  Atsushi Iwasaki

发明人： Masao Ozeki ,  Atsushi Iwasaki

IPC分类号： G06F3/044

CPC分类号： G06F3/044 ,  G06F2203/04111 ,  Y10T29/49002

摘要： An electrostatic capacity type touch panel having on one surface of a transparent substrate, a plurality of columns of column electrodes extending in a first direction and a plurality of columns of column electrodes extending in a second direction intersecting the first direction,such column electrodes extending in the first direction and such column electrodes extending in the second direction being eclectically disconnected from each other by an electrically insulating layer provided at least in a part of each intersection region of the column electrodes, and at least one of the two intersecting column electrodes being electrically connected by a bridge wire provided in the intersection region.

摘要翻译： 一种静电电容型触摸屏，其具有在透明基板的一个表面上，沿第一方向延伸的多列列电极和沿与第一方向相交的第二方向延伸的多列列电极， 第一方向和沿第二方向延伸的列电极通过至少设置在列电极的每个交叉区域的一部分中的电绝缘层彼此分离地彼此分离，并且两个相交的列电极中的至少一个是电 通过设置在交叉路口区域中的桥接线连接。

公开(公告)号：US20110237413A1

公开(公告)日：2011-09-29

申请号：US13154600

申请日：2011-06-07

申请人： Hiroyuki Sakakibara ,  Norio Hashimoto ,  Hiroaki Sakai ,  Atsushi Iwasaki ,  Yuko Sekihara ,  Kazuo Kishino ,  Masaaki Takahashi ,  Katsuhisa Matsunaka

发明人： Hiroyuki Sakakibara ,  Norio Hashimoto ,  Hiroaki Sakai ,  Atsushi Iwasaki ,  Yuko Sekihara ,  Kazuo Kishino ,  Masaaki Takahashi ,  Katsuhisa Matsunaka

IPC分类号： F28F5/02

CPC分类号： G03G15/206 ,  G03G2215/2035

摘要： A pressure roller forming a nip portion for contacting to a heating member to pinch and convey and heat recording material includes: a core metal and an elastic layer containing filler, the elastic layer containing the filler including thermal conductive filler with length of not less than 0.05 mm and not more than 1 mm and with thermal conductivity λf in the longitudinal direction in a range of λf≧500 W/(m·k) being dispersed in not less than 5 vol. % and not more than 40 vol % and the elastic layer containing the filler providing thermal conductivity λy in the longitudinal direction perpendicular to a recording material conveyance direction being λy≧2.5 W/(m·k) and ASKER-C hardness of the filler being not more than 60 degrees, wherein a solid rubber elastic layer with thermal conductivity λ in a thickness direction being not less than 0.16 W/(m·k) and not more than 0.40 W/(m·k) is included and the solid rubber elastic layer is formed on an outer periphery of the core metal and the elastic layer containing the filler is formed on the outer periphery of the solid rubber elastic layer. As a result, a pressure roller which can suppress temperature rise in a region, where recording material does not pass, stabilizes conveyability, provides high endurance, provides high thermal conductivity and low hardness is provided.

摘要翻译： 形成用于与加热构件接触以夹持和传送和加热记录材料的压区的压辊包括：芯金属和含有填料的弹性层，所述弹性层包含长度不小于0.05的导热填料的填料 mm且不大于1mm，并且在λf≥500W/（m·k）的范围内的长度方向的热导率λf分散在5体积％以上。 ％且不大于40体积％，并且包含在垂直于记录材料输送方向的纵向方向上提供热导率λy的填料的弹性层为λy≥2.5W/（m·k），填料的ASKER-C硬度为 不超过60度，其中包括厚度方向上的热导率λ的固体橡胶弹性层不小于0.16W /（m·k）且不大于0.40W /（m·k），并且固体橡胶 在芯金属的外周形成弹性层，在固体橡胶弹性层的外周形成含有填料的弹性层。 结果，可以抑制记录材料不通过的区域中的温度升高的压力辊稳定输送性，提供高耐久性，提供高导热性和低硬度。

公开(公告)号：US20110146564A1

公开(公告)日：2011-06-23

申请号：US13061586

申请日：2009-09-24

申请人： Hiroshi Ohtsuna ,  Atsushi Iwasaki

发明人： Hiroshi Ohtsuna ,  Atsushi Iwasaki

IPC分类号： C30B15/26

CPC分类号： C30B29/06 ,  C30B15/26 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032

摘要： A method for detecting a diameter of a single crystal at the time of pulling the single crystal from a silicon melt contained in a crucible according to the Czochralski method, the method including at least: using two cameras placed equidistant from each other as a target diameter upon forming a straight-body portion of the single crystal and face both ends of the diameter of the single crystal in a growth point of the single crystal respectively, to separately capture both of the ends of the growth point of the single crystal from an outside of a furnace, the growth point being a contact point between the single crystal and a melt surface; and detecting the diameter of the single crystal on the basis of the captured images. As a result, diameter detection precision is improved.

摘要翻译： 一种用于根据切克劳斯基方法从包含在坩埚中的硅熔体中拉出单晶时的单晶直径的方法，所述方法至少包括：使用彼此等距离放置的两个相机作为目标直径 在形成单晶的直体部分并且分别在单晶的生长点处面对单晶直径的两端时，从外部单独地捕获单晶的生长点的两端 所述生长点是所述单晶和熔体表面之间的接触点; 并且基于所捕获的图像检测单晶的直径。 结果，直径检测精度提高。

公开(公告)号：US20100274805A9

公开(公告)日：2010-10-28

申请号：US11721314

申请日：2006-05-12

申请人： Akimichi Tanabe ,  Motoshi Tamura ,  Atsushi Iwasaki ,  Makoto Koushiro

发明人： Akimichi Tanabe ,  Motoshi Tamura ,  Atsushi Iwasaki ,  Makoto Koushiro

IPC分类号： G06F17/30

CPC分类号： H04W4/02 ,  H04L67/1097 ,  H04L67/16 ,  H04L67/18 ,  H04W8/005 ,  H04W8/26 ,  H04W64/00 ,  H04W68/00 ,  H04W88/14 ,  H04W88/16

摘要： A communications system is provided which can search for information about a communications device that is not registered in a network by designating time. The search system, which includes a plurality of communications devices, gateways and an entity management server, can execute a search method. The entity management server stores in a storage device the identification information of the communications device sent from the gateways with establishing correspondence with notification time. The entity management server receives from a mobile terminal the identification information of the communications device and designated time. The entity management server searches for the identification information stored in the storage device at the designated time, and identifies the location information of the gateways corresponding to the identification information included in the search request.

摘要翻译： 提供通信系统，其可以通过指定时间来搜索关于未在网络中注册的通信设备的信息。 包括多个通信设备，网关和实体管理服务器的搜索系统可以执行搜索方法。 实体管理服务器将从网关发送的通信设备的识别信息与通知时间建立对应关系，存储在存储设备中。 实体管理服务器从移动终端接收通信设备的识别信息和指定时间。 实体管理服务器在指定时间搜索存储在存储设备中的识别信息，并且识别与包括在搜索请求中的识别信息相对应的网关的位置信息。