Exhaust apparatus, semiconductor device manufacturing system and method for manufacturing semiconductor device
    1.
    发明授权
    Exhaust apparatus, semiconductor device manufacturing system and method for manufacturing semiconductor device 失效
    排气装置,半导体装置制造系统及半导体装置的制造方法

    公开(公告)号:US06907892B2

    公开(公告)日:2005-06-21

    申请号:US10011725

    申请日:2001-12-11

    申请人: Kou Sugano

    发明人: Kou Sugano

    摘要: In an exhaust pipe, a rotating shaft takeoff connection is provided so as to support a rotating shaft for rotating a switching valve fixed thereon. The rotating shaft extends to the outside of the exhaust pipe and is provided with an introduction hole and branch holes in such a manner that the introduction hole and the branch holes are communicated with each other to form through holes extending from the outside to the inside of the exhaust pipe. Into a gap between the rotating shaft takeoff connection and the rotating shaft, purge gas is introduced via the introduction hole and the branch holes. Furthermore, pure water is introduced into the gap via the introduction hole and the branch holes. By utilizing the purge gas, exhaust gas within the exhaust pipe is prevented from leaking outside the pipe and by utilizing the pure water, accumulated solid substance are prevented from adhering to the related parts of the pipe.

    摘要翻译: 在排气管中,设置有旋转轴的离开连接,以支撑用于旋转固定在其上的切换阀的旋转轴。 旋转轴延伸到排气管的外部,并且设置有引入孔和分支孔,使得引入孔和分支孔彼此连通,以形成从外部向内延伸的通孔 排气管。 在旋转轴起飞连接和旋转轴之间的间隙中,通过导入孔和分支孔引入净化气体。 此外,纯水通过导入孔和分支孔引入到间隙中。 通过利用净化气体,能够防止排气管内的废气泄漏到管外,通过利用纯水,能够防止积聚的固体物质附着在管道的相关部位。

    Method for manufacturing a light-emitting element including a protective film for a charge injection layer
    3.
    发明授权
    Method for manufacturing a light-emitting element including a protective film for a charge injection layer 有权
    包括电荷注入层用保护膜的发光元件的制造方法

    公开(公告)号:US08822246B2

    公开(公告)日:2014-09-02

    申请号:US13205765

    申请日:2011-08-09

    摘要: A method for manufacturing a light-emitting element. An anode is formed on a main surface of a substrate. A hole-injection layer is formed at least above the anode. At least the hole-injection layer is covered with a protective film. A bank which is provided with an aperture through which a portion of the protective film is exposed, is formed on the protective film by a wet process. The portion of the protective film exposed through the aperture is removed so that a portion of the hole-injection layer is exposed, a light-emitting layer is formed on the hole-injection layer exposed through the aperture, and a cathode is formed above the light-emitting layer. The protective film is resistant to a fluid used during the wet process.

    摘要翻译: 一种发光元件的制造方法。 在基板的主表面上形成阳极。 至少在阳极上方形成空穴注入层。 至少空穴注入层被保护膜覆盖。 通过湿法在保护膜上形成有设置有保护膜的一部分露出的开口的堤。 除去通过孔露出的保护膜的部分,使得空穴注入层的一部分露出,在通过该孔露出的空穴注入层上形成发光层,并且阴极形成在 发光层。 保护膜对于在湿法中使用的流体是耐受的。

    ORGANIC EL ELEMENT
    4.
    发明申请
    ORGANIC EL ELEMENT 有权
    有机EL元素

    公开(公告)号:US20130313543A1

    公开(公告)日:2013-11-28

    申请号:US13994164

    申请日:2011-01-21

    IPC分类号: H01L51/52 H01L51/56

    摘要: Provided is an organic EL element which withstands mass production of organic EL display panels, and promises driving at a low voltage and high luminous efficiency due to excellent hole-injection efficiency. Specifically, an organic EL element is formed by sequentially laminating an anode, a hole injection layer, a buffer layer, a light-emitting layer, and a cathode on one surface of a substrate. The hole injection layer is a at least 2 nm thick tungsten oxide layer formed under predetermined film forming conditions, and includes an occupied energy level that is 1.8 eV to 3.6 eV lower than a lowest energy level of a valence band of the hole injection layer in terms of a binding energy. This reduces the hole injection barrier between the anode and the hole injection layer and the hole injection barrier between the hole injection layer and the buffer layer.

    摘要翻译: 提供一种有机EL元件,其可承受大量生产有机EL显示面板,并且由于优异的空穴注入效率而承诺以低电压和高发光效率驱动。 具体地,通过在基板的一个表面上依次层叠阳极,空穴注入层,缓冲层,发光层和阴极来形成有机EL元件。 空穴注入层是在预定的成膜条件下形成的至少2nm厚的氧化钨层,并且包括比空穴注入层的价带的最低能级低1.8eV至3.6eV的占据能级, 具有约束力的术语。 这样可以减少阳极和空穴注入层之间的空穴注入势垒以及空穴注入层与缓冲层之间的空穴注入势垒。

    Organic EL element
    5.
    发明授权
    Organic EL element 有权
    有机EL元件

    公开(公告)号:US08884281B2

    公开(公告)日:2014-11-11

    申请号:US13994164

    申请日:2011-01-21

    摘要: Provided is an organic EL element which withstands mass production of organic EL display panels, and promises driving at a low voltage and high luminous efficiency due to excellent hole-injection efficiency. Specifically, an organic EL element is formed by sequentially laminating an anode, a hole injection layer, a buffer layer, a light-emitting layer, and a cathode on one surface of a substrate. The hole injection layer is a at least 2 nm thick tungsten oxide layer formed under predetermined film forming conditions, and includes an occupied energy level that is 1.8 eV to 3.6 eV lower than a lowest energy level of a valence band of the hole injection layer in terms of a binding energy. This reduces the hole injection barrier between the anode and the hole injection layer and the hole injection barrier between the hole injection layer and the buffer layer.

    摘要翻译: 提供一种有机EL元件,其可承受大量生产有机EL显示面板,并且由于优异的空穴注入效率而承诺以低电压和高发光效率驱动。 具体地,通过在基板的一个表面上依次层叠阳极,空穴注入层,缓冲层,发光层和阴极来形成有机EL元件。 空穴注入层是在预定的成膜条件下形成的至少2nm厚的氧化钨层,并且包括比空穴注入层的价带的最低能级低1.8eV至3.6eV的占据能级, 具有约束力的术语。 这样可以减少阳极和空穴注入层之间的空穴注入势垒以及空穴注入层与缓冲层之间的空穴注入势垒。

    PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
    7.
    发明申请
    PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的生产方法

    公开(公告)号:US20100304554A1

    公开(公告)日:2010-12-02

    申请号:US12526217

    申请日:2009-01-06

    IPC分类号: H01L21/265 H01L21/306

    摘要: In a production method for a semiconductor device relating to the present invention, first, a pattern of a resist film made of organic polymers is formed on a semiconductor substrate. Next, impurity ions with 1×1014 cm−2 or greater of dose amount are implanted into the semiconductor substrate using the resist film pattern as a mask. The resist film pattern mask is removed sequentially through an oxidation treatment, swelling treatment and removal treatment. In the oxidation treatment, a treatment to oxidize a hardened layer formed in a surface portion of the resist film pattern by the ion implantation is implemented. In the swelling treatment, a treatment to swell the organic polymers composing the resist film pattern where the hardened layer has been oxidized using a chemical solution is implemented. In the removal treatment, the swollen resist film pattern is removed using the chemical solution used for the swelling treatment.

    摘要翻译: 在本发明的半导体装置的制造方法中,首先,在半导体基板上形成由有机聚合物构成的抗蚀剂膜的图案。 接下来,使用抗蚀剂膜图案作为掩模,将具有1×10 14 cm -2或更大剂量的杂质离子注入到半导体衬底中。 依次通过氧化处理,溶胀处理和去除处理去除抗蚀剂膜图案掩模。 在氧化处理中,实现了通过离子注入氧化形成在抗蚀剂膜图案的表面部分中的硬化层的处理。 在溶胀处理中,实施了使用化学溶液使构成抗蚀剂膜图案的有机聚合物溶胀硬化层已被氧化的处理。 在去除处理中,使用用于溶胀处理的化学溶液除去溶胀的抗蚀剂膜图案。

    Exhaust apparatus, semiconductor device manufacturing system and method for manufacturing semiconductor device
    8.
    发明授权
    Exhaust apparatus, semiconductor device manufacturing system and method for manufacturing semiconductor device 有权
    排气装置,半导体装置制造系统及半导体装置的制造方法

    公开(公告)号:US07329322B2

    公开(公告)日:2008-02-12

    申请号:US11101462

    申请日:2005-04-08

    申请人: Kou Sugano

    发明人: Kou Sugano

    IPC分类号: B08B5/00 B08B3/00

    摘要: In an exhaust pipe, a rotating shaft takeoff connection is provided so as to support a rotating shaft for rotating a switching valve fixed thereon. The rotating shaft extends to the outside of the exhaust pipe and is provided with an introduction hole and branch holes in such a manner that the introduction hole and the branch holes are communicated with each other to form through holes extending from the outside to the inside of the exhaust pipe. Into a gap between the rotating shaft takeoff connection and the rotating shaft, purge gas is introduced via the introduction hole and the branch holes. Furthermore, pure water is introduced into the gap via the introduction hole and the branch holes. By utilizing the purge gas, exhaust gas within the exhaust pipe is prevented from leaking outside the pipe and by utilizing the pure water, accumulated solid substance are prevented from adhering to the related parts of the pipe.

    摘要翻译: 在排气管中,设置有旋转轴的离开连接,以支撑用于旋转固定在其上的切换阀的旋转轴。 旋转轴延伸到排气管的外部,并且设置有引入孔和分支孔,使得引入孔和分支孔彼此连通,以形成从外部向内延伸的通孔 排气管。 在旋转轴起飞连接和旋转轴之间的间隙中,通过导入孔和分支孔引入净化气体。 此外,纯水通过导入孔和分支孔引入到间隙中。 通过利用净化气体,能够防止排气管内的废气泄漏到管外,通过利用纯水,能够防止积聚的固体物质附着在管道的相关部位。

    Organic EL element, display panel, and display device
    9.
    发明授权
    Organic EL element, display panel, and display device 有权
    有机EL元件,显示面板和显示装置

    公开(公告)号:US08963415B2

    公开(公告)日:2015-02-24

    申请号:US13821327

    申请日:2010-11-15

    IPC分类号: H01L51/10 H01L51/52

    摘要: An organic EL element comprises: a transparent electrode; a reflective electrode opposite the transparent electrode; and a light-emitting layer having a film thickness of 20 nm to 200 nm, between the electrodes. The reflective electrode is a layered film of: a metal film including Al as a main component and having a film thickness of at least 43 nm; and a Ni film, whose film thickness d satisfies: 0 nm

    摘要翻译: 有机EL元件包括:透明电极; 与透明电极相对的反射电极; 以及电极之间的膜厚为20nm〜200nm的发光层。 反射电极是以Al为主成分且膜厚为43nm以上的金属膜的层叠膜, 以及Ni膜,其膜厚d满足:0nm

    ORGANIC EL ELEMENT, DISPLAY PANEL, AND DISPLAY DEVICE
    10.
    发明申请
    ORGANIC EL ELEMENT, DISPLAY PANEL, AND DISPLAY DEVICE 有权
    有机EL元件,显示面板和显示器件

    公开(公告)号:US20130240854A1

    公开(公告)日:2013-09-19

    申请号:US13821327

    申请日:2010-11-15

    IPC分类号: H01L51/52

    摘要: An organic EL element comprises: a transparent electrode; a reflective electrode opposite the transparent electrode; and a light-emitting layer having a film thickness of 20 nm to 200 nm, between the electrodes. The reflective electrode is a layered film of: a metal film including Al as a main component and having a film thickness of at least 43 nm; and a Ni film, whose film thickness d satisfies: 0 nm

    摘要翻译: 有机EL元件包括:透明电极; 与透明电极相对的反射电极; 以及电极之间的膜厚为20nm〜200nm的发光层。 反射电极是以Al为主成分且膜厚为43nm以上的金属膜的层叠膜, 以及Ni膜,其膜厚d满足:0nm