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1.发明申请公开(公告)号：US20100055924A1
公开(公告)日：2010-03-04
申请号：US12199412
申请日：2008-08-27
IPC分类号： H01L21/306
CPC分类号： H01L21/6708 , H01L21/02068 , H01L21/02087 , H01L21/0209 , H01L21/32134 , H01L21/67745 , H01L21/68735 , H01L21/68785
摘要： Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.
摘要翻译： 描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。 在晶片的边缘斜面区域上施加蚀刻剂之前，该方法和系统提供了薄层的预漂洗液体。 蚀刻剂较少稀释，并通过稀薄的冲洗液层更快地扩散。 公开了一种边缘斜面去除实施例，其涉及在减少加工时间，使金属锥度变窄并允许随后的化学机械抛光方面特别有效。
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2.发明申请公开(公告)号：US20140190529A1
公开(公告)日：2014-07-10
申请号：US13857883
申请日：2013-04-05
CPC分类号： H01L21/6708 , H01L21/02068 , H01L21/02087 , H01L21/0209 , H01L21/32134 , H01L21/67745 , H01L21/68735 , H01L21/68785
摘要： Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.
摘要翻译： 描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。 在晶片的边缘斜面区域上施加蚀刻剂之前，该方法和系统提供了薄层的预漂洗液体。 蚀刻剂较少稀释，并通过稀薄的冲洗液层更快地扩散。 公开了一种边缘斜面去除实施例，其涉及在减少加工时间，使金属锥度变窄并允许随后的化学机械抛光方面特别有效。
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3.发明授权公开(公告)号：US08419964B2
公开(公告)日：2013-04-16
申请号：US12199412
申请日：2008-08-27
IPC分类号： H01L21/302
CPC分类号： H01L21/6708 , H01L21/02068 , H01L21/02087 , H01L21/0209 , H01L21/32134 , H01L21/67745 , H01L21/68735 , H01L21/68785
摘要： Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.
摘要翻译： 描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。 在晶片的边缘斜面区域上施加蚀刻剂之前，该方法和系统提供了薄层的预漂洗液体。 蚀刻剂较少稀释，并通过稀薄的冲洗液层更快地扩散。 公开了一种边缘斜面去除实施例，其涉及在减少加工时间，使金属锥度变窄并允许随后的化学机械抛光方面特别有效。
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