-
公开(公告)号：US07935231B2
公开(公告)日：2011-05-03
申请号：US11932595
申请日：2007-10-31
Applicant: Shantinath Ghongadi , Robert Rash , Jeff Hawkins , Seshasayee Varadarajan , Tariq Majid , Kousik Ganesan , Bryan Buckalew , Brian Evans
Inventor： Shantinath Ghongadi , Robert Rash , Jeff Hawkins , Seshasayee Varadarajan , Tariq Majid , Kousik Ganesan , Bryan Buckalew , Brian Evans
CPC classification number: C25D17/001 , C25D17/004 , C25D17/005 , C25D21/08
Abstract: Embodiments of a closed-contact electroplating cup assembly that may be rapidly cleaned while an electroplating system is on-line are disclosed. One disclosed embodiment comprises a cup assembly and a cone assembly, wherein the cup assembly comprises a cup bottom comprising an opening, a seal surrounding the opening, an electrical contact structure comprising a plurality of electrical contacts disposed around the opening, and an interior cup side that is tapered inwardly in along an axial direction of the cup from a cup top toward the cup bottom.
Abstract translation: 公开了一种在电镀系统在线时能够快速清洁的闭式电镀杯组件的实施例。 一个公开的实施例包括杯组件和锥形组件，其中杯组件包括杯底，其包括开口，围绕开口的密封件，包括围绕开口设置的多个电触点的电接触结构，以及内杯侧 其沿着杯的轴向方向从杯形顶部向杯底部向内渐缩。
-
公开(公告)号：US08377268B2
公开(公告)日：2013-02-19
申请号：US13154224
申请日：2011-06-06
Applicant: Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
Inventor： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
CPC classification number: C25D17/001 , C25D7/123 , C25D17/02
Abstract: Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.
Abstract translation: 公开了一种闭式电镀杯的实施例。 一个实施例包括一个包括一个开口的杯底，以及一个围绕开口设置在杯底的密封件。 密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。 该实施例还包括设置在密封件的一部分上的电接触结构，其中电接触结构包括外环和从外环向内延伸的多个触点，并且其中每个触头具有大致平坦的晶片接触表面。 该实施例还包括晶圆定心机构，其配置成使晶片位于杯中心。
-
3.发明申请公开(公告)号：US20100055924A1
公开(公告)日：2010-03-04
申请号：US12199412
申请日：2008-08-27
Applicant: Kousik Ganesan , Shanthinath Ghongadi , Tariq Majid , Aaron Labrie , Steven T. Mayer
Inventor： Kousik Ganesan , Shanthinath Ghongadi , Tariq Majid , Aaron Labrie , Steven T. Mayer
IPC: H01L21/306
CPC classification number: H01L21/6708 , H01L21/02068 , H01L21/02087 , H01L21/0209 , H01L21/32134 , H01L21/67745 , H01L21/68735 , H01L21/68785
Abstract: Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.
Abstract translation: 描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。 在晶片的边缘斜面区域上施加蚀刻剂之前，该方法和系统提供了薄层的预漂洗液体。 蚀刻剂较少稀释，并通过稀薄的冲洗液层更快地扩散。 公开了一种边缘斜面去除实施例，其涉及在减少加工时间，使金属锥度变窄并允许随后的化学机械抛光方面特别有效。
-
公开(公告)号：US06884335B2
公开(公告)日：2005-04-26
申请号：US10441607
申请日：2003-05-20
Applicant: Eric G. Webb , Jonathan D. Reid , John H. Sukamto , Sesha Varadarajan , Margolita M. Pollack , Bryan L. Buckalew , Tariq Majid
Inventor： Eric G. Webb , Jonathan D. Reid , John H. Sukamto , Sesha Varadarajan , Margolita M. Pollack , Bryan L. Buckalew , Tariq Majid
IPC: C25D5/04 , C25D5/18 , C25D7/12 , H01L21/288
CPC classification number: C25D5/04 , C25D5/18 , C25D7/123 , C25D17/001 , H01L21/2885 , Y10S428/935 , Y10T428/12993
Abstract: A negative bias is applied to an integrated circuit wafer immersed in an electrolytic plating solution to generate a DC current. After about ten percent to sixty percent of the final layer thickness has formed in a first plating time, biasing is interrupted during short pauses during a second plating time to generate substantially zero DC current. The pauses are from about 2 milliseconds to 5 seconds long, and typically about 10 milliseconds to 500 milliseconds. Generally, about 2 pauses to 100 pauses are used, and typically about 3 pauses to 15 pauses. Generally, the DC current density during the second plating time is greater than the DC current density during the initial plating time. Typically, the integrated circuit wafer is rotated during electroplating. Preferably, the wafer is rotated at a slower rotation rate during the second plating time than during the first plating time.
Abstract translation: 将负偏压施加到浸在电解电镀溶液中的集成电路晶片以产生DC电流。 在第一电镀时间中已经形成最终层厚度的约百分之十到百分之六十之后，在第二电镀时间期间的短暂停期间偏压中断，以产生基本为零的DC电流。 停顿时间为大约2毫秒到5秒，通常为大约10毫秒到500毫秒。 通常，使用约2次暂停至100次暂停，通常约3次暂停至15次停顿。 通常，第二电镀时间期间的直流电流密度大于初始电镀时间期间的直流电流密度。 通常，电镀期间集成电路晶片旋转。 优选地，在第二电镀时间期间，晶片以比第一电镀时间期间更慢的旋转速度旋转。
-
5.发明授权公开(公告)号：US08419964B2
公开(公告)日：2013-04-16
申请号：US12199412
申请日：2008-08-27
Applicant: Kousik Ganesan , Shanthinath Ghongadi , Tariq Majid , Aaron Labrie , Steven T. Mayer
Inventor： Kousik Ganesan , Shanthinath Ghongadi , Tariq Majid , Aaron Labrie , Steven T. Mayer
IPC: H01L21/302
CPC classification number: H01L21/6708 , H01L21/02068 , H01L21/02087 , H01L21/0209 , H01L21/32134 , H01L21/67745 , H01L21/68735 , H01L21/68785
Abstract: Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.
Abstract translation: 描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。 在晶片的边缘斜面区域上施加蚀刻剂之前，该方法和系统提供了薄层的预漂洗液体。 蚀刻剂较少稀释，并通过稀薄的冲洗液层更快地扩散。 公开了一种边缘斜面去除实施例，其涉及在减少加工时间，使金属锥度变窄并允许随后的化学机械抛光方面特别有效。
-
Patent Agency Ranking
公开(公告)号：US20110233056A1
公开(公告)日：2011-09-29
申请号：US13154224
申请日：2011-06-06
Applicant: Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
Inventor： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
CPC classification number: C25D17/001 , C25D7/123 , C25D17/02
Abstract: Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.
Abstract translation: 公开了一种闭式电镀杯的实施例。 一个实施例包括一个包括一个开口的杯底，以及一个围绕开口设置在杯底的密封件。 密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。 该实施例还包括设置在密封件的一部分上的电接触结构，其中电接触结构包括外环和从外环向内延伸的多个触点，并且其中每个触头具有大致平坦的晶片接触表面。 该实施例还包括晶圆定心机构，其配置成使晶片位于杯中心。
-
公开(公告)号：US20110181000A1
公开(公告)日：2011-07-28
申请号：US13079745
申请日：2011-04-04
Applicant: Shantinath Ghongadi , Robert Rash , Jeff Hawkins , Seshasayee Varadarajan , Tariq Majid , Kousik Ganesan , Bryan Buckalew , Brian Evans
Inventor： Shantinath Ghongadi , Robert Rash , Jeff Hawkins , Seshasayee Varadarajan , Tariq Majid , Kousik Ganesan , Bryan Buckalew , Brian Evans
IPC: F16J15/16
CPC classification number: C25D17/001 , C25D17/004 , C25D17/005 , C25D21/08
Abstract: Embodiments of a closed-contact electroplating cup assembly that may be rapidly cleaned while an electroplating system is on-line are disclosed. One disclosed embodiment comprises a cup assembly and a cone assembly, wherein the cup assembly comprises a cup bottom comprising an opening, a seal surrounding the opening, an electrical contact structure comprising a plurality of electrical contacts disposed around the opening, and an interior cup side that is tapered inwardly in along an axial direction of the cup from a cup top toward the cup bottom.
Abstract translation: 公开了一种在电镀系统在线时能够快速清洁的闭式电镀杯组件的实施例。 一个公开的实施例包括杯组件和锥形组件，其中杯组件包括杯底，其包括开口，围绕开口的密封件，包括围绕开口设置的多个电触点的电接触结构，以及内杯侧 其沿着杯的轴向方向从杯形顶部向杯底部向内渐缩。
-
公开(公告)号：US20090107836A1
公开(公告)日：2009-04-30
申请号：US11929638
申请日：2007-10-30
Applicant: Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
Inventor： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
CPC classification number: C25D17/001 , C25D7/123 , C25D17/02
Abstract: Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.
Abstract translation: 公开了一种闭式电镀杯的实施例。 一个实施例包括一个包括一个开口的杯底，以及一个围绕开口设置在杯底的密封件。 密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。 该实施例还包括设置在密封件的一部分上的电接触结构，其中电接触结构包括外环和从外环向内延伸的多个接触件，并且其中每个接触件具有大致平坦的晶片接触表面。 该实施例还包括晶圆定心机构，其配置成使晶片位于杯中心。
-
公开(公告)号：US20090107835A1
公开(公告)日：2009-04-30
申请号：US11932595
申请日：2007-10-31
Applicant: Shantinath Ghongadi , Robert Rash , Jeff Hawkins , Seshasayee Varadarajan , Tariq Majid , Kousik Ganesan , Bryan Buckalew , Brian Evans
Inventor： Shantinath Ghongadi , Robert Rash , Jeff Hawkins , Seshasayee Varadarajan , Tariq Majid , Kousik Ganesan , Bryan Buckalew , Brian Evans
IPC: C25B9/00
CPC classification number: C25D17/001 , C25D17/004 , C25D17/005 , C25D21/08
Abstract: Embodiments of a closed-contact electroplating cup assembly that may be rapidly cleaned while an electroplating system is on-line are disclosed. One disclosed embodiment comprises a cup assembly and a cone assembly, wherein the cup assembly comprises a cup bottom comprising an opening, a seal surrounding the opening, an electrical contact structure comprising a plurality of electrical contacts disposed around the opening, and an interior cup side that is tapered inwardly in along an axial direction of the cup from a cup top toward the cup bottom.
Abstract translation: 公开了一种在电镀系统在线时能够快速清洁的闭式电镀杯组件的实施例。 一个公开的实施例包括杯组件和锥形组件，其中杯组件包括杯底，其包括开口，围绕开口的密封件，包括围绕开口设置的多个电触点的电接触结构，以及内杯侧 其沿着杯的轴向方向从杯形顶部向杯底部向内渐缩。
-
10.发明申请公开(公告)号：US20140190529A1
公开(公告)日：2014-07-10
申请号：US13857883
申请日：2013-04-05
Applicant: Kousik Ganesan , Shanthinath Ghongadi , Tariq Majid , Aaron Labrie , Steven T. Mayer
Inventor： Kousik Ganesan , Shanthinath Ghongadi , Tariq Majid , Aaron Labrie , Steven T. Mayer
CPC classification number: H01L21/6708 , H01L21/02068 , H01L21/02087 , H01L21/0209 , H01L21/32134 , H01L21/67745 , H01L21/68735 , H01L21/68785
Abstract: Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.
Abstract translation: 描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。 在晶片的边缘斜面区域上施加蚀刻剂之前，该方法和系统提供了薄层的预漂洗液体。 蚀刻剂较少稀释，并通过稀薄的冲洗液层更快地扩散。 公开了一种边缘斜面去除实施例，其涉及在减少加工时间，使金属锥度变窄并允许随后的化学机械抛光方面特别有效。
-
-
-
-
-
-
-
-
-
Search Results
12
records
(took 0.015 seconds)
