公开(公告)号：US20120038603A1

公开(公告)日：2012-02-16

申请号：US13051601

申请日：2011-03-18

Applicant: Kuan-Yu CHEN ,  Wei-Cheng Lin

Inventor： Kuan-Yu CHEN ,  Wei-Cheng Lin

IPC: G09G5/00

CPC classification number: G09G3/36 ,  G11C19/28

Abstract: A shift register circuit includes plural stages of shift registers. Each stage of shift register includes a pull-up circuit, a control signal generator and a voltage-stabilizing circuit. The pull-up circuit is used for charging a first node. The control signal generator is electrically connected with the first node. According to a voltage level of the first node, a corresponding control signal is outputted from an output terminal of the control signal generator. The voltage-stabilizing circuit is electrically connected with the output terminal of the control signal generator for stabilizing the control signal from the control signal generator. Some circuits of some other shift registers are controlled according to the control signal.

Abstract translation: 移位寄存器电路包括多级移位寄存器。 移位寄存器的每一级包括上拉电路，控制信号发生器和稳压电路。 上拉电路用于对第一节点充电。 控制信号发生器与第一节点电连接。 根据第一节点的电压电平，从控制信号发生器的输出端输出相应的控制信号。 电压稳定电路与控制信号发生器的输出端子电连接，用于稳定来自控制信号发生器的控制信号。 一些其他移位寄存器的某些电路根据控制信号进行控制。

公开(公告)号：US20120205715A1

公开(公告)日：2012-08-16

申请号：US13026519

申请日：2011-02-14

Applicant: Tsz-Mei KWOK ,  Hsueh-Chang SUNG ,  Kuan-Yu CHEN ,  Hsien-Hsin LIN

Inventor： Tsz-Mei KWOK ,  Hsueh-Chang SUNG ,  Kuan-Yu CHEN ,  Hsien-Hsin LIN

IPC: H01L29/772 ,  H01L21/336

CPC classification number: H01L29/0847 ,  H01L29/165 ,  H01L29/665 ,  H01L29/66598 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7848

Abstract: An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides a processing for forming improved lightly doped source/drain features and source/drain features in the semiconductor device. Semiconductor device with the improved lightly doped source/drain features and source/drain features may prevent or reduce defects and achieve high strain effect. In at least one embodiment, the lightly doped source/drain features and source/drain features comprises the same semiconductor material formed by epitaxial growth.

Abstract translation: 公开了一种用于制造集成电路器件的集成电路器件和方法。 所公开的方法提供了在半导体器件中形成改进的轻掺杂源极/漏极特征和源极/漏极特征的处理。 具有改进的轻掺杂源极/漏极特征和源极/漏极特征的半导体器件可以防止或减少缺陷并实现高应变效应。 在至少一个实施例中，轻掺杂源极/漏极特征和源极/漏极特征包括通过外延生长形成的相同的半导体材料。

公开(公告)号：US20120181625A1

公开(公告)日：2012-07-19

申请号：US13009322

申请日：2011-01-19

Applicant: Tsz-Mei KWOK ,  Hsueh-Chang SUNG ,  Kuan-Yu CHEN ,  Hsien-Hsin LIN

Inventor： Tsz-Mei KWOK ,  Hsueh-Chang SUNG ,  Kuan-Yu CHEN ,  Hsien-Hsin LIN

IPC: H01L29/772 ,  H01L21/336

CPC classification number: H01L29/6659 ,  H01L29/165 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

Abstract: An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides a processing for forming improved source/drain features in the semiconductor device. Semiconductor devices with the improved source/drain features may prevent or reduce defects and achieve high strain effect resulting from epi layers. In an embodiment, the source/drain features comprises a second portion surrounding a first portion, and a third portion between the second portion and the semiconductor substrate, wherein the second portion has a composition different from the first and third portions.

Abstract translation: 公开了一种用于制造集成电路器件的集成电路器件和方法。 所公开的方法提供了用于在半导体器件中形成改进的源极/漏极特征的处理。 具有改善的源极/漏极特征的半导体器件可以防止或减少缺陷并实现由epi层产生的高应变效应。 在一个实施例中，源极/漏极特征包括围绕第一部分的第二部分和在第二部分和半导体衬底之间的第三部分，其中第二部分具有不同于第一和第三部分的组成。

公开(公告)号：US20110024801A1

公开(公告)日：2011-02-03

申请号：US12795088

申请日：2010-06-07

Applicant: Chun-Fai CHENG ,  Hsueh-Chang SUNG ,  Kuan-Yu CHEN ,  Hsien-Hsin LIN ,  Fung Ka HING

Inventor： Chun-Fai CHENG ,  Hsueh-Chang SUNG ,  Kuan-Yu CHEN ,  Hsien-Hsin LIN ,  Fung Ka HING

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7848 ,  H01L21/3065 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

Abstract: A transistor includes a gate electrode disposed over a substrate. At least one composite strain structure is disposed adjacent to a channel below the gate electrode. The at least one composite strain structure includes a first strain region within the substrate. A second strain region is disposed over the first strain region. At least a portion of the second strain region is disposed within the substrate.

Abstract translation: 晶体管包括设置在衬底上的栅电极。 至少一个复合应变结构邻近栅电极下方的沟道设置。 所述至少一个复合应变结构包括所述基底内的第一应变区。 第二应变区设置在第一应变区上。 第二应变区域的至少一部分设置在衬底内。

公开(公告)号：US20140349544A1

公开(公告)日：2014-11-27

申请号：US13902898

申请日：2013-05-27

Applicant: Ta-Yi CHIEN ,  Chien-Hsun KAO ,  Shih-Han TSENG ,  Hai-Yin HSU ,  Kuan-Yu CHEN ,  Fen-Ling HU ,  Wei-Yu LEE ,  Kun-Yi LEE ,  Yen-Juei LIN ,  Chien-Chun CHEN ,  Min-Han LIN ,  Chia-Yu GUO ,  Chun-Han CHOU ,  Shang-Ching LIN ,  Chin-Yu CHANG ,  Han-Shun LIANG

Inventor： Ta-Yi CHIEN ,  Chien-Hsun KAO ,  Shih-Han TSENG ,  Hai-Yin HSU ,  Kuan-Yu CHEN ,  Fen-Ling HU ,  Wei-Yu LEE ,  Kun-Yi LEE ,  Yen-Juei LIN ,  Chien-Chun CHEN ,  Min-Han LIN ,  Chia-Yu GUO ,  Chun-Han CHOU ,  Shang-Ching LIN ,  Chin-Yu CHANG ,  Han-Shun LIANG

IPC: A63H33/04

CPC classification number: A63H33/042 ,  A63H33/046

Abstract: An illuminable building block is disclosed. The illuminable building block has a cell body, at least one circuit board, at least one illuminating device, at least one photo sensing device, at least one circuit control module, and at least one assembly portion. The cell body has an accommodating space, and the circuit board is located therein. The at least one illuminating device is disposed at the inner surface of the circuit board, and each photo sensing device corresponds to at least one illuminating device. The at least one circuit control module is used for illuminating the illuminating device.

Abstract translation: 公开了一种可照亮的构件。 所述可照明构造块具有电池体，至少一个电路板，至少一个照明装置，至少一个感光装置，至少一个电路控制模块和至少一个组件部分。 电池体具有容纳空间，并且电路板位于其中。 至少一个照明装置设置在电路板的内表面处，并且每个光感测装置对应于至少一个照明装置。 所述至少一个电路控制模块用于照亮所述照明装置。

公开(公告)号：US20110079807A1

公开(公告)日：2011-04-07

申请号：US12774128

申请日：2010-05-05

Applicant: Kuan-Yu CHEN

Inventor： Kuan-Yu CHEN

IPC: H01L33/46

CPC classification number: H01L33/58

Abstract: A light-emitting diode structure includes a base with a recessed portion, a light-emitting chip and a light-transmissive block. The light-emitting chip disposed in the recessed portion of the base and emits a light beam. The light-transmissive block disposed on the base covers the recessed portion and the light-emitting chip, so that the light beam emitted from the light-emitting chip is radiated outwardly via the light-transmissive block. The light-transmissive block is a flat-top multilateral cone including a bottom surface, a top surface, and several side surfaces connected to and located between the bottom surface and the top surface. A slot with a bottom portion is formed on the top surface of the light-transmissive block.

Abstract translation: 发光二极管结构包括具有凹部的基座，发光芯片和透光块。 发光芯片设置在基座的凹部中并发射光束。 设置在基座上的透光块覆盖凹部和发光芯片，使得从发光芯片发射的光束经由透光块向外辐射。 透光块是包括底表面，顶表面和连接到并位于底表面和顶表面之间的几个侧表面的平顶多边锥体。 具有底部的槽形成在透光块的顶表面上。