公开(公告)号：US20050007213A1

公开(公告)日：2005-01-13

申请号：US10884445

申请日：2004-07-02

申请人： Kunihiko Nakajima ,  Kenichi Ohta ,  Yoshiki Iwazaki

发明人： Kunihiko Nakajima ,  Kenichi Ohta ,  Yoshiki Iwazaki

IPC分类号： H01P1/18 ,  H03H7/20

CPC分类号： H03H7/20

摘要： A phase shifter comprises: a phase shift unit including a reactance unit having a first variable capacitance device, and a susceptance unit having a second variable capacitance device, serially connected to the reactance unit; and a control unit for outputting a control signal continuously changing the capacitance of the first variable capacitance device and the second variable capacitance device to the phase shift unit. The amount of phase shift can be continuously changed by changing these variable capacitance devices continuously. Moreover, these devices can be formed on a semiconductor, thereby realizing low-voltage driving and high-speed response. Furthermore, the variance of impedance can be prevented by adjusting these two variable capacitance devices, whereby transmission efficiency can be improved

摘要翻译： 移相器包括：相移单元，包括具有第一可变电容器件的电抗单元和具有串联连接到电抗单元的第二可变电容器件的电纳单元; 以及控制单元，用于输出将所述第一可变静电电容器件和所述第二可变电容器件的电容连续变化到所述相移单元的控制信号。 可以通过连续地改变这些可变电容器件来连续地改变相移量。 此外，这些器件可以形成在半导体上，从而实现低电压驱动和高速响应。 此外，通过调整这两个可变电容装置可以防止阻抗的变化，从而可以提高传输效率

公开(公告)号：US07126442B2

公开(公告)日：2006-10-24

申请号：US10884445

申请日：2004-07-02

申请人： Kunihiko Nakajima ,  Kenichi Ohta ,  Yoshiki Iwazaki

发明人： Kunihiko Nakajima ,  Kenichi Ohta ,  Yoshiki Iwazaki

IPC分类号： H01P1/18 ,  H03H7/18

CPC分类号： H03H7/20

摘要： A phase shifter comprises: a phase shift unit including a reactance unit having a first variable capacitance device, and a susceptance unit having a second variable capacitance device, T-connected to the reactance unit; and a control unit for outputting a control signal continuously changing the capacitance of the first variable capacitance device and the second variable capacitance device to the phase shift unit. The amount of phase shift can be continuously changed by changing these variable capacitance devices continuously. Moreover, these devices can be formed on a semiconductor, thereby realizing low-voltage driving and high-speed response. Furthermore, the variance of impedance can be prevented by adjusting these two variable capacitance devices, whereby transmission efficiency can be improved.

摘要翻译： 一种移相器包括：相移单元，包括具有第一可变电容器件的电抗单元和具有与电抗单元T连接的第二可变电容器件的电纳单元; 以及控制单元，用于输出将所述第一可变静电电容器件和所述第二可变电容器件的电容连续变化到所述相移单元的控制信号。 可以通过连续地改变这些可变电容器件来连续地改变相移量。 此外，这些器件可以形成在半导体上，从而实现低电压驱动和高速响应。 此外，通过调整这两个可变电容装置可以防止阻抗的变化，从而可以提高传输效率。

公开(公告)号：US06824898B2

公开(公告)日：2004-11-30

申请号：US10459558

申请日：2003-06-12

申请人： Toshimasa Suzuki ,  Yoshiki Iwazaki ,  Kentaro Morito ,  Shoichi Sekiguchi ,  Masayuki Fujimoto

发明人： Toshimasa Suzuki ,  Yoshiki Iwazaki ,  Kentaro Morito ,  Shoichi Sekiguchi ,  Masayuki Fujimoto

IPC分类号： B32B900

CPC分类号： H01L21/02197 ,  C23C16/409 ,  C30B23/02 ,  C30B29/24 ,  C30B29/32 ,  H01L21/02293 ,  H01L21/28291 ,  H01L21/31604 ,  H01L21/31691 ,  H01L28/55 ,  H01L29/516

摘要： A lattice strain(s) due to lattice mismatch can be effectively utilized and it is further designed for the reduction of leakage current and the improvement of fatigue characteristic. Substantially one layer of {X3}O corresponding to one atomic layer of {X3}O is inserted at suitable intervals while epitaxially growing perovskite oxides or {X1}{X2}O3 layers 12 on a substrate which is similar in crystallographic structure to a desired thin film. {X1} and {X3} are each Ca or the like, {X2} is Ti or the like and ┌O┘ is oxygen. While the {X3}O layer(s) 14 is introduced so as to divide the perovskite structure of the {X1}{X2}O3 layers 12, it is present in a condition exhibiting an extremely high structural matching with the perovskite structure thereby forming a layered perovskite structure. The {X3}O layer(s) 14 functions as a blocking layer for the introduction of misfit(lattice mismatch) dislocations. As a result, a ferroelectric thin film maintaining high lattice strains is produced.

摘要翻译： 可以有效地利用由于晶格失配引起的晶格应变，并且进一步设计用于减少漏电流和改善疲劳特性。在一个{X3} O的一层对应于{X3} O的一个原子层 以合适的间隔插入，同时在与晶体学结构相似的衬底上外延生长钙钛矿氧化物或{X1} {X2} O3层12，使其成为所需的薄膜。 {X1}和{X3}各自为Ca等，{X2}为Ti等，O 0为氧。 当引入{X3} O层14以分割{X1} {X2} O3层12的钙钛矿结构时，其呈现与钙钛矿结构具有极高结构匹配的状态，从而形成 层状钙钛矿结构。 {X3} O层14用作引入失配（晶格失配）位错的阻挡层。 结果，产生维持高晶格应变的铁电薄膜。