利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

91 条记录 (耗时 0.02 秒)

    Perovskite manganese oxide thin film
    3.
    发明授权
    Perovskite manganese oxide thin film 失效
    钙钛矿氧化锰薄膜

    公开(公告)号：US08778513B2

    公开(公告)日：2014-07-15

    申请号：US13816738

    申请日：2012-03-02

    申请人： Yasushi Ogimoto

    发明人： Yasushi Ogimoto

    IPC分类号： C30B29/22 ,  C01G45/02 ,  C01G45/12 ,  C23C14/00 ,  C23C14/08 ,  C30B23/02 ,  H01L21/02 ,  H01L29/04 ,  H01L29/24 ,  H01L45/00

    CPC分类号： C01G45/1264 ,  C01G45/02 ,  C01G45/12 ,  C01G45/1214 ,  C01P2002/34 ,  C01P2002/50 ,  C01P2002/77 ,  C01P2004/03 ,  C23C14/0021 ,  C23C14/08 ,  C30B23/025 ,  C30B29/22 ,  C30B29/24 ,  G11C13/0004 ,  H01L21/02197 ,  H01L21/02266 ,  H01L29/045 ,  H01L29/24 ,  H01L45/04 ,  H01L45/147

    摘要： An article including a perovskite manganese (Mn) oxide thin film, includes a substrate having an oriented perovskite structure that is (m10) oriented, where 19≧m≧2, and having an [100] axis direction; and a perovskite manganese (Mn) oxide thin film having a perovskite crystal lattice containing barium Ba and a rare earth element Ln in A sites of the perovskite crystal lattice, the perovskite manganese (Mn) oxide thin film being formed on the substrate so as to cover at least part of a surface of the substrate, and having atomic planes stacked in a pattern of LnO—MnO2—BaO—MnO2-LnO . . . in the [100] axis direction of the substrate. The perovskite manganese (Mn) oxide thin film provided thoroughly exploits the resistance changes caused by charge and orbital ordering in the perovskite manganese oxide.

    摘要翻译： 包括钙钛矿锰（Mn）氧化物薄膜的物品包括具有（m10）取向的取向钙钛矿结构的基体，其中19≥m≥2且具有[100]轴方向; 以及钙钛矿型锰（Mn）氧化物薄膜，其在钙钛矿型晶格的A部位具有包含钡Ba和稀土元素Ln的钙钛矿晶格，在基板上形成钙钛矿锰（Mn）氧化物薄膜， 覆盖基板的表面的至少一部分，并且具有以LnO-MnO 2 -BaO-MnO 2 -LnO的图案堆叠的原子面。 。 。 在基板的[100]轴方向。 提供的钙钛矿锰（Mn）氧化物薄膜充分利用了钙钛矿氧化锰中电荷和轨道排列引起的电阻变化。

    CRYSTALLINE STRONTIUM TITANATE AND METHODS OF FORMING THE SAME
    6.
    发明申请
    CRYSTALLINE STRONTIUM TITANATE AND METHODS OF FORMING THE SAME 有权
    钛酸锶结晶及其形成方法

    公开(公告)号：US20130108877A1

    公开(公告)日：2013-05-02

    申请号：US13609725

    申请日：2012-09-11

    申请人： Tom E. Blomberg

    发明人： Tom E. Blomberg

    IPC分类号： C30B1/02 ,  C30B29/68 ,  C30B25/18

    CPC分类号： C30B29/32 ,  C30B1/02 ,  C30B1/04 ,  C30B25/18 ,  C30B25/186 ,  C30B29/24 ,  C30B29/68 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02318 ,  Y10T428/31678

    摘要： Methods of forming a crystalline strontium titanate layer may include providing a substrate with a crystal enhancement surface (e.g., Pt), depositing strontium titanate by atomic layer deposition, and conducting a post-deposition anneal to crystallize the strontium titanate. Large single crystal domains may be formed, laterally extending greater distances than the thickness of the strontium titanate and demonstrating greater ordering than the underlying crystal enhancement surface provided to initiate ALD. Functional oxides, particularly perovskite complex oxides, can be heteroepitaxially deposited over the crystallized STO.

    摘要翻译： 形成结晶钛酸锶层的方法可以包括提供具有晶体增强表面（例如Pt）的衬底，通过原子层沉积沉积钛酸锶，并进行后沉积退火以使钛酸锶结晶。 可以形成大的单晶畴，横向延伸比钛酸锶的厚度更大的距离，并显示出比提供用于引发ALD的下面的晶体增强表面更大的顺序。 功能氧化物，特别是钙钛矿复合氧化物，可以异质外延沉积在结晶的STO上。

    OPTICAL MODULE
    7.
    发明申请
    OPTICAL MODULE 有权
    光学模块

    公开(公告)号：US20120236409A1

    公开(公告)日：2012-09-20

    申请号：US13421021

    申请日：2012-03-15

    申请人： Akira YAHAGI ,  Toshiaki Watanabe

    发明人： Akira YAHAGI ,  Toshiaki Watanabe

    IPC分类号： G02F1/09 ,  B24B1/00

    CPC分类号： G02F1/093 ,  C30B11/00 ,  C30B13/00 ,  C30B15/08 ,  C30B29/24 ,  H01F7/0273

    摘要： An optical module is provided that includes a Faraday rotator having a Verdet constant at a wavelength of 1.06 μm of at least 0.27 min/(Oe·cm), a first hollow magnet disposed on the outer periphery of the Faraday rotator, and second and third hollow magnet units disposed so as to sandwich the first hollow magnet on the optical axis. The second and third hollow magnet units include 2 or more magnets equally divided in a direction of 90 degrees relative to the optical axis. A magnetic flux density B (Oe) applied to the Faraday rotator is in the range of 0.5×104≦B≦1.5×104. The Faraday rotator is disposed on a sample length L (cm) in the range of 0.70≦L≦1.10, and has an external diameter D (cm) in the range of 0.20≦D≦0.60.

    摘要翻译： 提供一种光学模块，其包括具有至少0.27分钟/（Oe·cm）的波长为1.06μm的Verdet常数的法拉第旋转器，设置在法拉第旋转器的外周的第一中空磁体，以及第二和第三 中空磁体单元设置成将第一中空磁体夹在光轴上。 第二和第三中空磁体单元包括相对于光轴在90度的方向上等分的2个以上的磁体。 施加到法拉第旋转器的磁通密度B（Oe）在0.5×104

    Method of substrate surface treatment for RRAM thin film deposition
    10.
    发明申请
    Method of substrate surface treatment for RRAM thin film deposition 有权
    RRAM薄膜沉积的基板表面处理方法

    公开(公告)号：US20050266686A1

    公开(公告)日：2005-12-01

    申请号：US10855088

    申请日：2004-05-27

    申请人： Wei-Wei Zhuang ,  Tingkai Li ,  Wei Pan ,  David Evans ,  Sheng Hsu

    发明人： Wei-Wei Zhuang ,  Tingkai Li ,  Wei Pan ,  David Evans ,  Sheng Hsu

    IPC分类号： C23C18/12 ,  C30B23/02 ,  C30B29/24 ,  H01L21/44 ,  H01L45/00

    CPC分类号： C23C18/1216 ,  C23C18/1225 ,  C23C18/1241 ,  C23C18/1283 ,  C30B23/02 ,  C30B29/24 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/1608

    摘要： A method of fabricating a CMR thin film for use in a semiconductor device includes preparing a CMR precursor in the form of a metal acetate based acetic acid solution; preparing a wafer; placing a wafer in a spin-coating chamber; spin-coating and heating the wafer according to the following: injecting the CMR precursor into a spin-coating chamber and onto the surface of the wafer in the spin-coating chamber; accelerating the wafer to a spin speed of between about 1500 RPM to 3000 RPM for about 30 seconds; baking the wafer at a temperature of about 180° C. for about one minute; ramping the temperature to about 230° C.; baking the wafer for about one minute at the ramped temperature; annealing the wafer at about 500° C. for about five minutes; repeating said spin-coating and heating steps at least three times; post-annealing the wafer at between about 500° C. to 600° C. for between about one to six hours in dry, clean air; and completing the semiconductor device.

    摘要翻译： 制造用于半导体器件的CMR薄膜的方法包括制备基于金属乙酸酯的乙酸溶液形式的CMR前体; 准备晶圆; 将晶片放置在旋涂室中; 根据以下步骤旋涂和加热晶片：将CMR前体注入旋涂室并在旋涂室中的晶片表面上; 将晶片加速至约1500RPM至3000RPM之间的旋转速度约30秒; 在约180℃的温度下烘烤晶片约1分钟; 将温度升高至约230℃; 在升温下烘烤晶片约1分钟; 在约500℃退火晶片约5分钟; 重复所述旋涂和加热步骤至少三次; 在约500℃至600℃之间将晶片退火约1至6小时，在干燥，干净的空气中进行退火; 并完成半导体器件。