公开(公告)号：US06469341B1

公开(公告)日：2002-10-22

申请号：US09625143

申请日：2000-07-25

申请人： Kuo-Tung Sung ,  Ray C. Lee

发明人： Kuo-Tung Sung ,  Ray C. Lee

IPC分类号： H01L218247

CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L27/115

摘要： A method and resulting integrated circuit device (100) such as a flash memory device and resulting cell. The method includes a step of providing a substrate (115), which has an active region overlying a thin layer of dielectric material (113). The method uses a step of forming a floating gate layer (107) overlying the thin layer of dielectric material (113), which is commonly termed a “tunnel oxide” layer, but is not limited to such a layer or material. The floating gate layer (107) has novel geometric features including slant edges (121), which extend to the dielectric material (123). The slant edges (121) create a smaller geometric area for the tunnel oxide region relative to the area between the floating gate layer and the control gate layer.

摘要翻译： 一种方法和产生的集成电路装置（100），例如闪速存储装置和所得到的单元。 该方法包括提供衬底（115）的步骤，该衬底具有覆盖在介电材料（113）的薄层上的有源区域。 该方法使用形成覆盖在介电材料薄层（113）上的浮动栅层（​​107）的步骤，其通常称为“隧道氧化物”层，但不限于这种层或材料。 浮动栅极层（107）具有新颖的几何特征，其包括延伸到电介质材料（123）的倾斜边缘（121）。 倾斜边缘（121）为隧道氧化物区域相对于浮动栅极层和控制栅极层之间的区域产生较小的几何面积。

公开(公告)号：US6136653A

公开(公告)日：2000-10-24

申请号：US75852

申请日：1998-05-11

申请人： Kuo-Tung Sung ,  Ray C. Lee

发明人： Kuo-Tung Sung ,  Ray C. Lee

IPC分类号： H01L21/28 ,  H01L27/115 ,  H01L29/423 ,  H01L21/8247

CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L27/115

摘要： A method and resulting integrated circuit device (100) such as a flash memory device and resulting cell. The method includes a step of providing a substrate (115), which has an active region overlying a thin layer of dielectric material (113). The method uses a step of forming a floating gate layer (107) overlying the thin layer of dielectric material (113), which is commonly termed a "tunnel oxide" layer, but is not limited to such a layer or material. The floating gate layer (107) has novel geometric features including slant edges (121), which extend to the dielectric material (123). The slant edges (121) create a smaller geometric area for the tunnel oxide region relative to the area between the floating gate layer and the control gate layer.

公开(公告)号：US06399509B1

公开(公告)日：2002-06-04

申请号：US09664426

申请日：2000-09-18

申请人： Hung-Yueh Lu ,  Ray C. Lee ,  Hong-Long Chang

发明人： Hung-Yueh Lu ,  Ray C. Lee ,  Hong-Long Chang

IPC分类号： H01L21302

CPC分类号： H01L21/02071 ,  H01L21/32136

摘要： A method of patterning a metal line and removing the polymer layer that forms on the metal lines sidewalls in an important post etch-polymer removal step (e.g., step 4). A semiconductor structure and an overlying dielectric layer, a first barrier layer, a metal layer; a second barrier layer and resist pattern are provided. A four step etch process is performed in sequence in the same etch chamber. In a first etch step (A), we etch through the second barrier layer using a B and Cl containing gas and a Cl containing gas in a reactive ion etch to form a first polymer layer over the sidewall of the second barrier layer. In a second etch step (B), the metal layer is etched exposing the first barrier layer to form a second polymer over the first polymer and the sidewall of the metal layer; the second etch step performed using a B and Cl containing gas and a Cl containing gas. In a third etch step (C), the first barrier layer is etched to form a third polymer layer over the first and second polymer layers. The third etch step is performed using a B and Cl containing gas and a Cl containing gas. In an important fourth etch step (D), we remove the first, second and third polymers; the fourth etch step performed using only chlorine containing gas (Cl2) gas and a fluorocarbon containing gas.

摘要翻译： 图案化金属线并去除在重要的后蚀刻 - 聚合物去除步骤（例如，步骤4）中在金属线侧壁上形成的聚合物层的方法。 半导体结构和上覆电介质层，第一阻挡层，金属层; 提供第二阻挡层和抗蚀剂图案。 在相同的蚀刻室中依次执行四步蚀刻工艺。 在第一蚀刻步骤（A）中，我们在反应离子蚀刻中使用含有B和Cl的气体和含Cl的气体蚀刻穿过第二阻挡层，以在第二阻挡层的侧壁上形成第一聚合物层。 在第二蚀刻步骤（B）中，金属层被蚀刻，暴露第一阻挡层以在第一聚合物和金属层的侧壁上形成第二聚合物; 使用含有B和Cl的气体和含Cl的气体进行第二蚀刻步骤。 在第三蚀刻步骤（C）中，蚀刻第一阻挡层以在第一和第二聚合物层上形成第三聚合物层。 使用含有B和Cl的气体和含Cl的气体进行第三蚀刻步骤。 在重要的第四蚀刻步骤（D）中，我们除去第一，第二和第三聚合物; 仅使用含氯气体（Cl2）气体和含碳氟化合物的气体进行第四蚀刻步骤。

公开(公告)号：US06379491B1

公开(公告)日：2002-04-30

申请号：US09183015

申请日：1998-10-30

申请人： Ray C. Lee ,  Te-Hsun Pang ,  Tonny Shu ,  Birdson Lee

发明人： Ray C. Lee ,  Te-Hsun Pang ,  Tonny Shu ,  Birdson Lee

IPC分类号： E23C1600

CPC分类号： H01L21/6835 ,  F16B35/06 ,  H01J37/32477 ,  H01L21/67069 ,  H01L2924/3025

摘要： An apparatus is provided for treating a wafer under fabrication with an erosive plasma, in a contamination controlled environment. The apparatus includes a chamber for containing the wafer to be treated by the plasma, and for isolating the wafer from contaminants external to the chamber during treatment. The chamber also includes one or more plasma erosion resistive screws. Each screw has a shaft secured within the chamber so that the shaft is unexposed to the plasma, and a raised head which is integral with, and made of the same material as, the shaft. The head has a continuous, surface shape with a reduced number of edges so as to reduce the accumulation of charge thereon, thereby resisting erosion by the plasma.

摘要翻译： 提供了一种用于在污染控制环境中用腐蚀性等离子体处理晶片的装置。 该装置包括用于容纳待处理的等离子体的晶片并且在处理期间将晶片与室外的污染物隔离的室。 该室还包括一个或多个等离子体侵蚀电阻螺钉。 每个螺钉具有固定在腔室内的轴，使得轴未暴露于等离子体，以及与轴成一体并由与其相同材料制成的凸起头部。 头部具有连续的表面形状，边缘数量减少，以减少其上的电荷积累，从而抵抗等离子体的侵蚀。

公开(公告)号：US6166898A

公开(公告)日：2000-12-26

申请号：US183014

申请日：1998-10-30

申请人： Ray C. Lee ,  Mu-Tsun Ting ,  Jen-Hui Hsiao ,  Troy Chen

发明人： Ray C. Lee ,  Mu-Tsun Ting ,  Jen-Hui Hsiao ,  Troy Chen

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/687 ,  H05H1/46 ,  H01L21/00

CPC分类号： H01L21/68721 ,  H01J37/32477 ,  H01L21/68785

摘要： A plasma erosion resistive clamping ring is provided for clamping a wafer in a plasma treatment chamber. The plasma erosion resistive clamping ring comprises a ring and one or more tips secured to, and mutually spaced apart about, a circumference of the ring. Each of the tips projects away from the ring, in a radial direction, towards an interior of the ring. Each tip has plural side surfaces that taper to, and meet, a single, continuous surface of rotation. The surface of rotation is located in the interior of the ring at a location of the tip which is radially most distant from the ring. The meeting of the tapered sides at the single continuous surface of rotation has a cross-section, taken in a plane of the ring, as follows. The cross-section comprises first and second line segments, on lines that intersect at an acute angle, and an arc of a convex ellipse, that begins at an end of the first line segment most distant from the ring, and ends at an end of the second line segment most distant from the ring.

摘要翻译： 提供了等离子体侵蚀电阻夹紧环，用于将等离子体处理室中的晶片夹紧。 等离子体侵蚀电阻夹环包括环和一个或多个尖端，其固定到环的圆周周围并相互间隔开。 每个尖端在径向方向上突出远离环的内部。 每个尖端具有多个侧表面，其逐渐变细并且相遇于单个连续的旋转表面。 旋转表面位于距离环径向最远的尖端的位置处的环的内部。 在单个连续旋转表面处的锥形侧面的会聚如下所述在环的平面中截取。 横截面包括在锐角相交的线上的第一和第二线段以及在距离环最远的第一线段的端部开始的凸椭圆弧，并在 距离戒指最远的第二线段。