公开(公告)号：US20120068192A1

公开(公告)日：2012-03-22

申请号：US13308251

申请日：2011-11-30

申请人： Kwang C. Kim ,  Mathew C. Schmidt ,  Feng Wu ,  Asako Hirai ,  Melvin B. McLaurin ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

发明人： Kwang C. Kim ,  Mathew C. Schmidt ,  Feng Wu ,  Asako Hirai ,  Melvin B. McLaurin ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC分类号： H01L29/20 ,  C30B25/02 ,  C30B23/06

CPC分类号： C30B25/04 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007

摘要： A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.

摘要翻译： 通过使用横向外延过度生长，减少非极性（例如 - {11-20}面和m- {1-100}面或半极性，例如{10-1n}面III-氮化物）的穿透位错密度的方法 从蚀刻的模板材料的侧壁通过图案化掩模。 该方法包括在诸如非极性或半极性GaN模板的模板材料上沉积图案化掩模，通过掩模中的开口将模板材料蚀刻到各种深度，以及通过掩模中的开口生长非极性或半极性III-氮化物 在来自沟槽底部的垂直生长的材料到达侧壁的顶部之前，从侧壁的顶部侧向聚结。 聚结的特征通过掩模的开口生长，并且在介电掩模上横向生长，直到实现完全聚结的连续膜。