公开(公告)号：US06869500B2

公开(公告)日：2005-03-22

申请号：US10236939

申请日：2002-09-09

申请人： Kwang-Myung Lee ,  Mikio Takagi ,  Jae-Hyuk An ,  Seung-Ki Chae ,  Jea-Wook Kim

发明人： Kwang-Myung Lee ,  Mikio Takagi ,  Jae-Hyuk An ,  Seung-Ki Chae ,  Jea-Wook Kim

IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/311 ,  H05H1/00 ,  C23C16/00

CPC分类号： H01L21/02046 ,  H01L21/31116 ,  H01L21/67109

摘要： Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.

摘要翻译： 公开了一种用于在制造半导体器件中处理晶片的方法和装置，以及用于蚀刻形成在晶片上的材料的方法和设备，其中第一和第二冷却部件将多个晶片附近的环境温度调节到第一温度 ，通过在第一温度下引入反应气体来处理晶片，然后，加热部分将晶片附近的气氛的温度从第一温度快速升高到第二温度，以部分地分离在处理期间产生的副产物， 维持第二温度以将大部分副产物与晶片分离，并且处理步骤在同一空间内原位实施。 因此，可以蚀刻形成在几个晶片上的自然氧化物层，并且可以在相同的室中原位除去反应副产物，从而提高生产率。

公开(公告)号：US20050130451A1

公开(公告)日：2005-06-16

申请号：US11050738

申请日：2005-02-07

申请人： Kwang-Myung Lee ,  Mikio Takagi ,  Jae-Hyuk An ,  Seung-Ki Chae ,  Jea-Wook Kim

发明人： Kwang-Myung Lee ,  Mikio Takagi ,  Jae-Hyuk An ,  Seung-Ki Chae ,  Jea-Wook Kim

IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/311 ,  H01L21/8242 ,  C23F1/00 ,  H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC分类号： H01L21/02046 ,  H01L21/31116 ,  H01L21/67109

摘要： Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.