Methods, assemblies and systems for inspecting a photomask
    1.
    发明授权
    Methods, assemblies and systems for inspecting a photomask 有权
    用于检查光掩模的方法,组件和系统

    公开(公告)号:US07808629B2

    公开(公告)日:2010-10-05

    申请号:US11865145

    申请日:2007-10-01

    申请人: Kwon Lim Do-young Kim

    发明人: Kwon Lim Do-young Kim

    IPC分类号: G01N21/00

    摘要: A method of inspecting a photomask, the method comprising, inspecting at least a portion of the photomask to provide a location of defects having with a first resolution, determining at least one defect region in the location of the defects, the defect region having a defect therein, and imaging the at least one defect region to provide a defect image having a second resolution that is finer than the first resolution.

    摘要翻译: 一种检查光掩模的方法,所述方法包括:检查所述光掩模的至少一部分以提供具有第一分辨率的缺陷的位置,确定所述缺陷位置中的至少一个缺陷区域,所述缺陷区域具有缺陷 并且对至少一个缺陷区进行成像,以提供具有比第一分辨率更精细的第二分辨率的缺陷图像。

    METHODS, ASSEMBLIES AND SYSTEMS FOR INSPECTING A PHOTOMASK
    2.
    发明申请
    METHODS, ASSEMBLIES AND SYSTEMS FOR INSPECTING A PHOTOMASK 有权
    方法,组装和检测光电子系统

    公开(公告)号:US20080079931A1

    公开(公告)日:2008-04-03

    申请号:US11865145

    申请日:2007-10-01

    申请人: Kwon Lim Do-young Kim

    发明人: Kwon Lim Do-young Kim

    IPC分类号: G01N21/00 G01M19/00

    摘要: A method of inspecting a photomask, the method comprising, inspecting at least a portion of the photomask to provide a location of defects having with a first resolution, determining at least one defect region in the location of the defects, the defect region having a defect therein, and imaging the at least one defect region to provide a defect image having a second resolution that is finer than the first resolution.

    摘要翻译: 一种检查光掩模的方法,所述方法包括:检查所述光掩模的至少一部分以提供具有第一分辨率的缺陷的位置,确定所述缺陷位置中的至少一个缺陷区域,所述缺陷区域具有缺陷 并且对至少一个缺陷区进行成像,以提供具有比第一分辨率更精细的第二分辨率的缺陷图像。

    Poly crystalline silicon semiconductor device and method of fabricating the same
    4.
    发明授权
    Poly crystalline silicon semiconductor device and method of fabricating the same 有权
    多晶硅半导体器件及其制造方法

    公开(公告)号:US07768010B2

    公开(公告)日:2010-08-03

    申请号:US12216701

    申请日:2008-07-09

    CPC分类号: H01L27/124 H01L29/42384

    摘要: Provided are a poly crystalline silicon semiconductor device and a method of fabricating the same. Portions of a silicon layer except for gates are removed to reduce a parasitic capacitance caused from the silicon layer existing on gate bus lines. The silicon layer exists under the gates only, thus the parasitic capacitance is reduced and the deterioration and the delay of signals are prevented. Accordingly, the poly crystalline silicon semiconductor device, such as a thin film transistor, has excellent electric characteristics.

    摘要翻译: 提供一种多晶硅半导体器件及其制造方法。 除去栅极以外的硅层的部分被去除以减少由存在于栅极总线上的硅层引起的寄生电容。 硅层仅存在于栅极之下,因此寄生电容减小,并且防止信号的劣化和延迟。 因此,诸如薄膜晶体管的多晶硅半导体器件具有优异的电特性。

    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    薄膜晶体管及其制造方法

    公开(公告)号:US20090162981A1

    公开(公告)日:2009-06-25

    申请号:US12372541

    申请日:2009-02-17

    IPC分类号: H01L21/84

    摘要: A thin film transistor and a method of manufacturing the same are provided. The thin film transistor includes a substrate; a buffer layer formed on the substrate; a source and a drain spaced apart from each other on the buffer layer; a channel layer formed on the buffer layer to connect the source and the drain with each other; and a gate formed on the buffer layer to be spaced apart from the source, the drain and the channel layer.

    摘要翻译: 提供薄膜晶体管及其制造方法。 薄膜晶体管包括基板; 形成在所述基板上的缓冲层; 在缓冲层上彼此间隔开的源极和漏极; 形成在所述缓冲层上的沟道层,以将所述源极和所述漏极彼此连接; 以及形成在缓冲层上以与源极,漏极和沟道层间隔开的栅极。

    Image reproducing apparatus for channel map updating and method thereof
    6.
    发明申请
    Image reproducing apparatus for channel map updating and method thereof 有权
    用于频道映射更新的图像再现装置及其方法

    公开(公告)号:US20060184964A1

    公开(公告)日:2006-08-17

    申请号:US11266394

    申请日:2005-11-04

    摘要: Disclosed is an image reproducing apparatus for updating a channel map, and a method thereof. The image reproducing apparatus includes an identification (ID) detector for detecting the ID of a broadcast information card when a broadcast information card is mounted, a comparing unit for comparing the ID of the broadcast information card detected by the detector with the ID of a existing broadcast information card, the ID being received from a broadcast station and stored in a storage unit, a deleting unit for deleting an existing first channel map when the ID of the detected broadcast information card is different from the ID of the existing broadcast information card, and a receiving unit for receiving data including a new second channel map from the broadcast station in place of the first channel map deleted by the deleting unit. Accordingly, accurate update conditions are proposed, thereby enhancing user convenience and increasing accuracy.

    摘要翻译: 公开了一种用于更新频道图的图像再现装置及其方法。 图像再现装置包括:识别(ID)检测器,用于在安装广播信息卡时检测广播信息卡的ID;比较单元,用于将由检测器检测到的广播信息卡的ID与现有的ID 广播信息卡,从广播站接收并存储在存储单元中的ID;删除单元,用于当检测到的广播信息卡的ID与现有广播信息卡的ID不同时,删除现有的第一频道映射, 以及接收单元,用于从广播站接收包括新的第二频道映射的数据,代替由删除单元删除的第一频道映射。 因此,提出了准确的更新条件,从而提高了用户的便利性并提高了准确度。

    Apparatus to change a channel using a channel map based on program genre and method thereof
    7.
    发明申请
    Apparatus to change a channel using a channel map based on program genre and method thereof 审中-公开
    使用基于节目类型的频道图改变频道的装置及其方法

    公开(公告)号:US20050160453A1

    公开(公告)日:2005-07-21

    申请号:US11016779

    申请日:2004-12-21

    申请人: Do-young Kim

    发明人: Do-young Kim

    摘要: A channel changing apparatus includes a channel map generator to generate a channel map according to a program genre by reading channel information associated with a program information for a plurality of channels extracted from a digital broadcast stream and sorting the channel information for the plurality of channels according to broadcast programs delivered through each of the plurality of channels, a storage unit to store the generated channel map, an input part to receive one of an up and down key signal to change the channel from a viewer input device having a plurality of keys, and a controller to retrieve channel information for a next channel to be changed to according to an order of the channel map and to control the digital broadcast receiver to change the channel depending on the retrieved channel information for the next channel when the key signal is input. Simple selection of the channel up and down keys allows the channel to change. Thus, a viewer can select a favorite channel with convenience.

    摘要翻译: 频道切换装置包括:频道映射生成器,用于通过读取与从数字广播流中提取的多个频道的节目信息相关联的频道信息,根据节目类型生成频道映射,并根据节目类型排列多个频道的频道信息 广播通过多个频道中的每一个传送的节目;存储单元,存储生成的频道映射;输入部分,接收上下键信号中的一个,以从具有多个键的观众输入装置改变频道, 以及控制器,用于根据频道图的顺序来检索要被改变的下一个频道的频道信息,并且当键信号被输入时,控制数字广播接收机根据所检索的下一个频道的频道信息来改变频道 。 通道上下键的简单选择允许通道更改。 因此,观众可以方便地选择喜爱的频道。

    Method of forming a polysilicon film, thin film transistor including a polysilicon film and method of manufacturing the same
    8.
    发明申请
    Method of forming a polysilicon film, thin film transistor including a polysilicon film and method of manufacturing the same 有权
    形成多晶硅膜的方法,包括多晶硅膜的薄膜晶体管及其制造方法

    公开(公告)号:US20050139919A1

    公开(公告)日:2005-06-30

    申请号:US10980838

    申请日:2004-11-04

    摘要: In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

    摘要翻译: 在形成多晶硅膜的方法中,包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法,薄膜晶体管包括基板,基板上的第一导热膜, 与所述第一导热膜相邻的所述第二导热膜,所述第二导热膜的热导率低于所述第一导热膜,所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上,或者第一导热膜可以不连续,并且第二导热膜可以介于不连续的第一导热膜的部分之间。

    MDCT domain post-filtering apparatus and method for quality enhancement of speech
    9.
    发明授权
    MDCT domain post-filtering apparatus and method for quality enhancement of speech 失效
    MDCT域后置滤波装置及语音质量提升方法

    公开(公告)号:US08315853B2

    公开(公告)日:2012-11-20

    申请号:US12155542

    申请日:2008-06-05

    CPC分类号: G10L19/26 G10L19/0212

    摘要: A post-filtering apparatus and method for speech enhancement in a modified discrete cosine transform (MDCT) domain are disclosed. In the apparatus and method, previous and current MDCT coefficients are used for obtaining a speech spectrum coefficient similar to a real speech spectrum, and a convex function is used for transforming the speech spectrum coefficient and obtaining a post-filter coefficient so that difference can increase in the case where the speech spectrum coefficient is small but decrease in the case where the coefficient is large. Then, the post-filter coefficient is applied to the MDCT coefficient. With this configuration, both the current and previous MDCT values are used, so that it is possible to obtain a spectrum coefficient similar to the real speech spectrum and to obtain a more accurate filter coefficient. Further, the coefficient is adaptively transformed through the convex function, thereby enhancing speech quality.

    摘要翻译: 公开了一种用于修正的离散余弦变换(MDCT)域中的语音增强的后置滤波装置和方法。 在该装置和方法中,先前和当前的MDCT系数被用于获得类似于真实语音频谱的语音频谱系数,并且使用凸函数来变换语音频谱系数并获得后置滤波器系数,使得差值可以增加 在语音频谱系数小的情况下,在系数大的情况下减少。 然后,将后滤波器系数应用于MDCT系数。 利用该配置,使用当前和先前的MDCT值,使得可以获得与真实语音频谱相似的频谱系数并获得更准确的滤波器系数。 此外,系数通过凸函数自适应地变换,从而提高语音质量。

    Method of forming a polysilicon film and method of manufacturing a thin film transistor including a polysilicon film
    10.
    发明授权
    Method of forming a polysilicon film and method of manufacturing a thin film transistor including a polysilicon film 有权
    形成多晶硅膜的方法和制造包括多晶硅膜的薄膜晶体管的方法

    公开(公告)号:US07923316B2

    公开(公告)日:2011-04-12

    申请号:US11808521

    申请日:2007-06-11

    IPC分类号: H01L21/00

    摘要: In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

    摘要翻译: 在形成多晶硅膜的方法中,包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法,薄膜晶体管包括基板,基板上的第一导热膜, 与所述第一导热膜相邻的所述第二导热膜,所述第二导热膜的热导率低于所述第一导热膜,所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上,或者第一导热膜可以不连续,并且第二导热膜可以介于不连续的第一导热膜的部分之间。