公开(公告)号：US20050092248A1

公开(公告)日：2005-05-05

申请号：US10977943

申请日：2004-10-18

申请人： Kyeong-Ha Lee ,  Sang-Chul Kim ,  Do-Il Jung ,  Hyun-Soo Park

发明人： Kyeong-Ha Lee ,  Sang-Chul Kim ,  Do-Il Jung ,  Hyun-Soo Park

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C30B25/14 ,  H01L21/00 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45565 ,  C30B25/14 ,  H01L21/67017

摘要： A chemical vapor deposition unit is invented for forming a uniform thin film over the entire surface of a substrat by the vapor-deposition. The chemical vapor deposition unit comprises a reaction chamber isolated from the outside and kept under vacuum, a susceptor, on which at least one substrate is placed, installed in the reaction chamber such that it can rotate, and an injector, including independently formed first and second gas passages, and first and second gas injecting pipes that communicate with the respective gas passages and respective outlets, for injecting respective first and second gases onto the susceptor, the injector injecting the different gases independently. The injector further comprises a gas injecting part for communicating with the second gas passage so that only the second gas, which is a non-reactive carrier gas, is injected in a central region of the susceptor.

摘要翻译： 发明了一种化学气相沉积单元，用于通过气相沉积在基体的整个表面上形成均匀的薄膜。 化学气相沉积单元包括从外部隔离并保持在真空下的反应室，在其上放置至少一个基板的基座安装在反应室中以使其能够旋转;以及喷射器，其包括首先独立地形成， 第二气体通道以及与相应的气体通道和各个出口连通的第一和第二气体注入管，用于将相应的第一和第二气体喷射到基座上，喷射器独立地注入不同的气体。 喷射器还包括用于与第二气体通道连通的气体注入部分，使得只有作为非反应性载气的第二气体注入基座的中心区域。