公开(公告)号：US06410381B1

公开(公告)日：2002-06-25

申请号：US09867658

申请日：2001-05-31

申请人： Kyong Min Kim ,  Kyung Cheol Jeong ,  Han Sang Song ,  Dong Jun Kim

发明人： Kyong Min Kim ,  Kyung Cheol Jeong ,  Han Sang Song ,  Dong Jun Kim

IPC分类号： H01L218242

摘要： The present invention discloses a method for forming a capacitor of a semiconductor device which can increase a capacitance and prevent a leakage current at the same time. The method includes the steps of depositing a cap oxide film on a semiconductor substrate, patterning the cap oxide film to expose a capacitor region of the semiconductor substrate, consecutively depositing an Ru film for a lower electrode on the patterned cap oxide film and the semiconductor substrate in in-situ according to a low pressure chemical vapor deposition(LPCVD) and a plasma enhanced chemical vapor deposition(PECVD), forming a cylindrical lower electrode, by performing a chemical mechanical polishing process on the Ru film and removing the cap oxide film, forming an amorphous TaON film having a high dielectric constant on the lower electrode, crystallizing the amorphous TaON film according to a thermal treatment, and forming a metal film for an upper electrode on the crystallized TaON film.

公开(公告)号：US5853484A

公开(公告)日：1998-12-29

申请号：US727903

申请日：1996-10-09

申请人： Kyung Cheol Jeong

发明人： Kyung Cheol Jeong

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/44

摘要： A gas distribution system for a chemical vapor deposition (CVD) apparatus includes a main gas supply pipe for receiving gas from a gas supply, a manifold communicated to the main gas supply pipe and having a plurality of sub-pipes, a plurality of gas metering valves provided at each of the sub-pipes so as to control gas amount flowing therein from each of the sub-pipes, a gas distribution head communicating with each of the sub-pipes so as to collectively jet gas therefrom, a control unit for outputting control signals to each of the gas control valves, and an N-point scanner electrically connected to input terminals of the control unit. The gas distribution system improves deposition uniformity by adjusting the thickness of a film deposited on a wafer in accordance with scanning information from the N-point scanner.

摘要翻译： 一种用于化学气相沉积（CVD）装置的气体分配系统包括：用于接收来自气体供应源的气体的主气体供应管，与主气体供应管连通并具有多个子管的歧管，多个气体计量 设置在每个子管上的阀，以便控制从每个子管流出的气体量，与每个子管连通以从其中共同喷射气体的气体分配头，用于输出 控制信号到每个气体控制阀，以及N点扫描器，电连接到控制单元的输入端。 通过根据来自N点扫描器的扫描信息调节沉积在晶片上的膜的厚度，气体分配系统改善了沉积均匀性。