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    Solar cell and method of fabricating the same
    1.
    发明授权
    Solar cell and method of fabricating the same 有权
    太阳能电池及其制造方法

    公开(公告)号：US08647914B2

    公开(公告)日：2014-02-11

    申请号：US13242787

    申请日：2011-09-23

    申请人： Kyoung-Jin Seo ,  Yoon-Mook Kang ,  Min-Chul Song ,  Dong-Chul Suh ,  Ju-Hee Song

    发明人： Kyoung-Jin Seo ,  Yoon-Mook Kang ,  Min-Chul Song ,  Dong-Chul Suh ,  Ju-Hee Song

    IPC分类号： H01L31/18 ,  H01L31/0216

    CPC分类号： H01L31/02167 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of fabricating a solar cell includes forming an emitter layer of a second conductive type on a front surface and a back surface of a substrate of a first conductive type opposite to the second conductive type, forming an anti-reflection layer on the front surface of the substrate, partially removing the anti-reflection layer and the emitter layer to form an isolation groove dividing the emitter layer into a plurality of regions, removing a portion of the emitter layer formed on the back surface of the substrate, and forming a passivation layer covering the isolation groove and the back surface of the substrate.

    摘要翻译： 一种制造太阳能电池的方法包括在与第二导电类型相反的第一导电类型的基板的前表面和后表面上形成第二导电类型的发射极层，在前表面上形成防反射层 部分地去除抗反射层和发射极层，以形成将发射极层分成多个区域的隔离槽，去除形成在衬底背面上的发射极层的一部分，并形成钝化层 覆盖隔离槽和衬底的背面。

    PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    光伏器件及其制造方法

    公开(公告)号：US20130125971A1

    公开(公告)日：2013-05-23

    申请号：US13587872

    申请日：2012-08-16

    申请人： Tae-Jun Kim ,  Min-Chul Song ,  Yoon-Mook Kang ,  Heung-Kyoon Lim

    发明人： Tae-Jun Kim ,  Min-Chul Song ,  Yoon-Mook Kang ,  Heung-Kyoon Lim

    IPC分类号： H01L31/0236 ,  H01L31/18

    CPC分类号： H01L31/1804 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

    摘要： Method of manufacturing a photovoltaic device and a photovoltaic device manufactured by using the method. The method includes forming a first conductive-type semiconductor layer using a first impurity on a semiconductor substrate, performing doping on a region of the first conductive-type semiconductor layer using a laser such that the region of the first conductive-type semiconductor layer has a higher concentration of the first impurity than a remaining portion of the first conductive-type semiconductor layer, performing edge isolation to form a groove portion at an edge portion of a rear surface of the semiconductor substrate, forming an antireflection layer on a front surface of the semiconductor substrate, forming a first metal electrode on the front surface of the semiconductor substrate, and forming a second metal electrode and a second conductive-type semiconductor layer including a second impurity that is different from the first impurity, on the rear surface of the semiconductor substrate.

    摘要翻译： 使用该方法制造光伏器件和光伏器件的方法。 该方法包括在半导体衬底上形成使用第一杂质的第一导电型半导体层，使用激光在第一导电型半导体层的区域上进行掺杂，使得第一导电型半导体层的区域具有 第一杂质的浓度比第一导电型半导体层的剩余部分浓度高，进行边缘隔离以在半导体衬底的后表面的边缘部分形成沟槽部分，在半导体衬底的表面上形成抗反射层 半导体衬底，在半导体衬底的前表面上形成第一金属电极，并且在半导体衬底的后表面上形成第二金属电极和包括与第一杂质不同的第二杂质的第二导电型半导体层 基质。