公开(公告)号：US20230178345A1

公开(公告)日：2023-06-08

申请号：US18062543

申请日：2022-12-06

申请人： Kyoungran Kim ,  Hungsuk You ,  Joongha Lee ,  Seokho Kim ,  Hoechul Kim ,  Kwangjin Moon ,  Sohye Cho

发明人： Kyoungran Kim ,  Hungsuk You ,  Joongha Lee ,  Seokho Kim ,  Hoechul Kim ,  Kwangjin Moon ,  Sohye Cho

IPC分类号： H01J37/32 ,  H01L23/00 ,  G01N23/223 ,  G01N21/62

CPC分类号： H01J37/32862 ,  H01J37/32091 ,  H01L24/80 ,  H01L24/05 ,  G01N23/223 ,  G01N21/62 ,  H01J2237/0225 ,  H01L2224/80009 ,  H01L2224/80895 ,  H01L24/94 ,  H01L2224/94 ,  H01L2224/05647 ,  H01L2224/05571 ,  H01L24/08 ,  H01L2224/08145 ,  H10B80/00

摘要： A chamber cleaning method includes processing a wafer for a Cu-to-Cu bonding process using plasma in a chamber; and removing copper from the chamber. Removing copper includes forming copper oxide on an inner wall of the chamber by oxidizing copper in the chamber by a plasma treatment that uses a first gas, performing a first monitoring operation that monitors a copper contamination state in the chamber using an optical diagnostic method, removing the copper oxide by a plasma treatment that uses a second gas; and performing a second monitoring operation that monitors a copper contamination state in the chamber using the optical diagnostic method.