公开(公告)号：US20230178345A1

公开(公告)日：2023-06-08

申请号：US18062543

申请日：2022-12-06

申请人： Kyoungran Kim ,  Hungsuk You ,  Joongha Lee ,  Seokho Kim ,  Hoechul Kim ,  Kwangjin Moon ,  Sohye Cho

发明人： Kyoungran Kim ,  Hungsuk You ,  Joongha Lee ,  Seokho Kim ,  Hoechul Kim ,  Kwangjin Moon ,  Sohye Cho

IPC分类号： H01J37/32 ,  H01L23/00 ,  G01N23/223 ,  G01N21/62

CPC分类号： H01J37/32862 ,  H01J37/32091 ,  H01L24/80 ,  H01L24/05 ,  G01N23/223 ,  G01N21/62 ,  H01J2237/0225 ,  H01L2224/80009 ,  H01L2224/80895 ,  H01L24/94 ,  H01L2224/94 ,  H01L2224/05647 ,  H01L2224/05571 ,  H01L24/08 ,  H01L2224/08145 ,  H10B80/00

摘要： A chamber cleaning method includes processing a wafer for a Cu-to-Cu bonding process using plasma in a chamber; and removing copper from the chamber. Removing copper includes forming copper oxide on an inner wall of the chamber by oxidizing copper in the chamber by a plasma treatment that uses a first gas, performing a first monitoring operation that monitors a copper contamination state in the chamber using an optical diagnostic method, removing the copper oxide by a plasma treatment that uses a second gas; and performing a second monitoring operation that monitors a copper contamination state in the chamber using the optical diagnostic method.

公开(公告)号：US09640507B2

公开(公告)日：2017-05-02

申请号：US14261489

申请日：2014-04-25

申请人： Ilyoung Han ,  Kyoungran Kim ,  Donggil Shim ,  Youngjoo Lee ,  Byunggon Kim ,  Byeongkap Choi

发明人： Ilyoung Han ,  Kyoungran Kim ,  Donggil Shim ,  Youngjoo Lee ,  Byunggon Kim ,  Byeongkap Choi

IPC分类号： B32B41/00 ,  H01L23/00 ,  H01L21/67 ,  H01L21/677 ,  H01L25/065 ,  H01L25/00 ,  H01L21/66 ,  H01L25/18

CPC分类号： H01L24/81 ,  H01L21/67092 ,  H01L21/67766 ,  H01L22/12 ,  H01L24/75 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/13101 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75745 ,  H01L2224/75803 ,  H01L2224/75804 ,  H01L2224/75823 ,  H01L2224/759 ,  H01L2224/7598 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/81948 ,  H01L2224/83203 ,  H01L2224/83855 ,  H01L2224/83948 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014

摘要： A bonding method for bonding a semiconductor chip to an underlying structure includes aligning an electrical contact of a lower surface of the semiconductor chip with an electrical connection member of an upper surface of the underlying structure, the electrical contact at least partially encased by a support material. The method further includes first heating the semiconductor chip and the underlying structure, deforming the electrical contact, and curing the support material encasing the deformed electrical contact. The method still further includes second heating the semiconductor chip and the underlying structure to bond the electrical contact of the semiconductor chip to the electrical connection member of the underlying structure while maintaining the support material in a cured state.

公开(公告)号：US20150053350A1

公开(公告)日：2015-02-26

申请号：US14261489

申请日：2014-04-25

申请人： ILYOUNG HAN ,  KYOUNGRAN KIM ,  DONGGIL SHIM ,  YOUNGJOO LEE ,  BYUNGGON KIM ,  BYEONGKAP CHOI

发明人： ILYOUNG HAN ,  KYOUNGRAN KIM ,  DONGGIL SHIM ,  YOUNGJOO LEE ,  BYUNGGON KIM ,  BYEONGKAP CHOI

IPC分类号： H01L23/00 ,  H01L21/683

CPC分类号： H01L24/81 ,  H01L21/67092 ,  H01L21/67766 ,  H01L22/12 ,  H01L24/75 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/13101 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75745 ,  H01L2224/75803 ,  H01L2224/75804 ,  H01L2224/75823 ,  H01L2224/759 ,  H01L2224/7598 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/81948 ,  H01L2224/83203 ,  H01L2224/83855 ,  H01L2224/83948 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014

摘要： A bonding method for bonding a semiconductor chip to an underlying structure includes aligning an electrical contact of a lower surface of the semiconductor chip with an electrical connection member of an upper surface of the underlying structure, the electrical contact at least partially encased by a support material. The method further includes first heating the semiconductor chip and the underlying structure, deforming the electrical contact, and curing the support material encasing the deformed electrical contact. The method still further includes second heating the semiconductor chip and the underlying structure to bond the electrical contact of the semiconductor chip to the electrical connection member of the underlying structure while maintaining the support material in a cured state.

摘要翻译： 用于将半导体芯片接合到下面的结构的接合方法包括将半导体芯片的下表面的电接触与下层结构的上表面的电连接构件对准，电接触件至少部分地被支撑材料包围 。 该方法还包括首先加热半导体芯片和下面的结构，使电接触变形，以及固化包围变形的电接触的支撑材料。 该方法还包括第二加热半导体芯片和下面的结构，以将半导体芯片的电接触连接到下面结构的电连接构件，同时将支撑材料保持在固化状态。