公开(公告)号：US08228743B2

公开(公告)日：2012-07-24

申请号：US13024903

申请日：2011-02-10

申请人： Kyu S. Min ,  Rhett T. Brewer ,  Tejas Krishnamohan ,  Thomas M. Graettinger ,  D. V. Nirmal Ramaswamy ,  Ronald A Weimer ,  Arup Bhattacharyya

发明人： Kyu S. Min ,  Rhett T. Brewer ,  Tejas Krishnamohan ,  Thomas M. Graettinger ,  D. V. Nirmal Ramaswamy ,  Ronald A Weimer ,  Arup Bhattacharyya

IPC分类号： G11C16/04

CPC分类号： G11C16/0483 ,  B82Y10/00 ,  G11C11/5671 ,  G11C16/0475 ,  G11C2216/06 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  Y10S977/943

摘要： Some embodiments include memory cells having vertically-stacked charge-trapping zones spaced from one another by dielectric material. The dielectric material may comprise high-k material. One or more of the charge-trapping zones may comprise metallic material. Such metallic material may be present as a plurality of discrete isolated islands, such as nanodots. Some embodiments include methods of forming memory cells in which two charge-trapping zones are formed over tunnel dielectric, with the zones being vertically displaced relative to one another, and with the zone closest to the tunnel dielectric having deeper traps than the other zone. Some embodiments include electronic systems comprising memory cells. Some embodiments include methods of programming memory cells having vertically-stacked charge-trapping zones.

摘要翻译： 一些实施例包括具有通过介电材料彼此间隔开的垂直堆叠的电荷捕获区的存储单元。 电介质材料可以包括高k材料。 一个或多个电荷捕获区可以包括金属材料。 这种金属材料可以作为多个离散的隔离岛存在，例如纳米点。 一些实施例包括形成存储器单元的方法，其中在隧道电介质上形成两个电荷捕获区，其中区域相对于彼此垂直位移，并且最靠近隧道电介质的区域具有比另一区更深的陷阱。 一些实施例包括包括存储器单元的电子系统。 一些实施例包括编程具有垂直堆叠的电荷捕获区的存储器单元的方法。

公开(公告)号：US07576398B2

公开(公告)日：2009-08-18

申请号：US11513658

申请日：2006-08-31

申请人： Ronald A Weimer

发明人： Ronald A Weimer

IPC分类号： H01L29/76

CPC分类号： H01L21/28185 ,  H01L21/28061 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28229 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： Methods for forming a nitride barrier film layer in semiconductor devices such as gate structures, and barrier layers, semiconductor devices and gate electrodes are provided. The nitride layer is particularly useful as a barrier to boron diffusion into an oxide film. The nitride barrier layer is formed by selectively depositing silicon onto an oxide substrate as a thin layer, and then thermally annealing the silicon layer in a nitrogen-containing species or exposing the silicon to a plasma source of nitrogen to nitridize the silicon layer.

摘要翻译： 提供了在诸如栅极结构和势垒层，半导体器件和栅电极的半导体器件中形成氮化物阻挡膜层的方法。 氮化物层特别可用作硼扩散到氧化物膜中的阻挡层。 氮化物阻挡层通过将硅选择性地沉积到氧化物衬底上作为薄层而形成，然后对含氮物质中的硅层进行热退火或者将硅暴露于等离子体氮源以使硅层氮化。

公开(公告)号：US07989870B2

公开(公告)日：2011-08-02

申请号：US12534054

申请日：2009-07-31

申请人： Ronald A Weimer ,  Don C Powell ,  John T Moore ,  Jeff A McKee

发明人： Ronald A Weimer ,  Don C Powell ,  John T Moore ,  Jeff A McKee

IPC分类号： H01L21/336

CPC分类号： H01L29/517 ,  H01L21/28273 ,  H01L29/511

摘要： A flash memory integrated circuit and a method for fabricating the same. A gate stack includes an initial oxide layer directly in contact with a silicon layer, defining an oxide-silicon interface therebetween. Additional oxide material is formed substantially uniformly along the oxide-silicon interface. Polysilicon grain boundaries at the interface are thereby passivated after etching. The interface can be formed between a tunnel oxide and a floating gate, and passivating the grain boundaries reduces erase variability. Oxide in an upper storage dielectric layer is enhanced in the dilute steam oxidation. The thin oxide layers serve as diffusion paths to enhance uniform distribution of OH species across the buried interfaces being oxidized.

摘要翻译： 闪存集成电路及其制造方法。 栅极堆叠包括直接与硅层接触的初始氧化物层，在其间界定氧化物 - 硅界面。 另外的氧化物材料沿着氧化硅 - 硅界面基本均匀地形成。 因此在界面处的多晶硅晶界被蚀刻后钝化。 界面可以形成在隧道氧化物和浮动栅极之间，钝化晶界可以减少擦除变化。 在稀释蒸汽氧化中，上储存电介质层中的氧化物增强。 薄氧化物层用作扩散路径，以增强OH物质穿过被氧化的掩埋界面的均匀分布。

公开(公告)号：US07323756B2

公开(公告)日：2008-01-29

申请号：US11513880

申请日：2006-08-31

申请人： Ronald A Weimer

发明人： Ronald A Weimer

IPC分类号： H01L29/76

CPC分类号： H01L21/28185 ,  H01L21/28061 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28229 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： Methods for forming a nitride barrier film layer in semiconductor devices such as gate structures, and barrier layers, semiconductor devices and gate electrodes are provided. The nitride layer is particularly useful as a barrier to boron diffusion into an oxide film. The nitride barrier layer is formed by selectively depositing silicon onto an oxide substrate as a thin layer, and then thermally annealing the silicon layer in a nitrogen-containing species or exposing the silicon to a plasma source of nitrogen to nitridize the silicon layer.

摘要翻译： 提供了在诸如栅极结构和势垒层，半导体器件和栅电极的半导体器件中形成氮化物阻挡膜层的方法。 氮化物层特别可用作硼扩散到氧化物膜中的阻挡层。 氮化物阻挡层通过将硅选择性地沉积到氧化物衬底上作为薄层而形成，然后对含氮物质中的硅层进行热退火或将硅暴露于等离子体氮源以氮化硅层。

公开(公告)号：US07323755B2

公开(公告)日：2008-01-29

申请号：US11513663

申请日：2006-08-31

申请人： Ronald A Weimer

发明人： Ronald A Weimer

IPC分类号： H01L29/76

CPC分类号： H01L21/28185 ,  H01L21/28061 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28229 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： Methods for forming a nitride barrier film layer in semiconductor devices such as gate structures, and barrier layers, semiconductor devices and gate electrodes are provided. The nitride layer is particularly useful as a barrier to boron diffusion into an oxide film. The nitride barrier layer is formed by selectively depositing silicon onto an oxide substrate as a thin layer, and then thermally annealing the silicon layer in a nitrogen-containing species or exposing the silicon to a plasma source of nitrogen to nitridize the silicon layer.