Norbornene-based copolymer for photoresist, preparation method thereof, and photoresist composition comprising the same
    4.
    发明授权
    Norbornene-based copolymer for photoresist, preparation method thereof, and photoresist composition comprising the same 失效
    用于光致抗蚀剂的降冰片烯系共聚物及其制备方法,以及含有它们的光致抗蚀剂组合物

    公开(公告)号:US06753127B2

    公开(公告)日:2004-06-22

    申请号:US10246474

    申请日:2002-09-19

    IPC分类号: G03F7038

    摘要: Disclosed is an norbornene-based copolymer for photoresist, a preparation method thereof, and a photoresist composition comprising the same. The copolymer of the present invention exhibits high transparency to light of 193 nm wavelength and an excellent etching resistance, excellent resolution due to the remarkable difference between light-exposed part and light-unexposed part in the dissolving rate and excellent adhesion to the substrate due to very hydrophilic diketone group of its own. As a result, the copolymer of the present invention is very useful as ArF exposure photoresist material in the fabrication of semiconductor devices.

    摘要翻译: 公开了一种用于光致抗蚀剂的降冰片烯系共聚物及其制备方法,以及含有该光致抗蚀剂的光致抗蚀剂组合物。 本发明的共聚物对193nm波长的光的透明度高,耐蚀刻性优异,由于曝光部和未曝光部之间的溶解速度的显着差异以及由于由于 非常亲水的二酮组自己。 结果,本发明的共聚物在半导体器件的制造中作为ArF曝光光致抗蚀剂材料是非常有用的。